schottky 中文意思是什麼

schottky 解釋
朔特基
  1. One type is the schottky defect in ionic crystals.

    在離子晶體中有一類是斯考特庫缺陷。
  2. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  3. Investigation of a type of organic metal schottky diode

    金屬肖特基二極體的實驗研究
  4. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  5. Schottky diodes are incorporated in inputs and outputs to clamp undershoot ( see figure 16 )

    肖特基二極體一起對輸入和輸出負過沖進行箝位（參見圖16 ） 。
  6. We are your specialist for semiconductor diodes and rectifiers : standard to ultrafast recovery, schottky, zener, supressor - diodes, bridge rectifiers, transistors, diacs ; also customized

    我們是專門提供二極體以及整流器，例如:標準到超快速恢復，肖特極，穩壓，雙向觸發二極體，橋式整流器，轉換器等等，可以依照客人要求訂做。
  7. The schottky diodes prevent undershoot signals from dropping below a specified level, reducing the possibility of damage to connected devices by large undershoots that can occur without the schottky diodes

    肖特基二極體防止負過沖信號跌進規定的電平以下，減少接在沒有肖特基二極體時過大的負過沖電壓的器件所可能造成的損害。
  8. In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of pn junction and schottky junction

    為了理解有機靜電感應三極體的肖特基柵極原理，本文在第二章闡述了pn結和肖特基結的特性。
  9. Detail specification for electronic components. silicon schottky barrier mixer diodes for types 2cv3a, 2cv3b and 2cv3g

    電子元器件詳細規范. 2cv3a 2cv3b和2cv3g型硅肖特基勢壘混頻二極體
  10. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  11. Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics

    基於此模型，提出在對正反向特性進行折衷時，如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。
  12. According to the analysis of physical quantities in the body, we got a conclusion that the effect of pn junction on schottky is through its depletion layer and the gap between two pn junctions

    通過對器件體內各物理量的定量分析，得出pn結對肖特基的作用是通過其耗盡層和兩pn結之間的間隙來影響肖特基的導電溝道這一結論。
  13. The pinning of the surface fermi level at 0. 29 ev above its initial value, equivalent to a variation of schottky baxrier height of 0. 67 ev is observed upon deposition of ~ 0. 6 ml er onto the clean p - type si ( 00l ) ( 2xl ) surface at room temperature

    通過對測得的硅和鉺的芯能級和價帶的分析，得到了以下結論：隨著鉺覆蓋度的增加至約為0 6單層，表面fermi能級被釘扎在其初始值0
  14. Harmonized system of quality assessment for electronic components. ttl advanced schottky digital integrated circuits. family specification

    電子元件統一質量評審體系.前置肖特基數字集成電路.系列規范
  15. Finally, according to the mosfet ' s parameter degradation due to hot - carrier effects and different application environment of mos devices on analog and digital circuits, the circuit structures for hot - carrier immunity are proposed for digital applications by adding a schottky diode in series with the drain of the nmosfet suffered heavily from hot - carrier degradation.,

    即在受熱載流子退化效應較嚴重的n mosfet漏極串聯一肖特基二極體的新型cmos數字電路結構和串聯一工作于線性區的常開n mosfet的mos模擬電路結構。經spice及電路可靠性模擬軟體bert2
  16. The primary investigation of this paper is the ohmic contact between metafs ' and gan. moreover, we have prepared photodetectors and schottky diodes based on gan

    本文的主要工作是對金屬與n型gan的歐姆接觸進行了研究，並在此基礎上制備了硅基gan上的紫外探測器和gan肖特基二極體。
  17. Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact

    肖特基勢壘二極體是利用金屬半導體的整流接觸特性而製成的二極體。
  18. The system which utilizing a dunn diode emitter and unbiased schottky diode detector was compact, simple and portable

    該系統採用耿氏二極體作發射器，無偏置肖特基二極體作探測器，具有小型、簡單和便攜的特點。
  19. Semiconductors. microwave diodes. schottky diodes. general requirements

    半導體.微波二極體.肖特基二極體.一般要求
  20. Bipolar decoders, schottky

    叔特基雙極解碼器
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