secondary emission surface 中文意思是什麼
secondary emission surface
解釋
二次電子發射面-
This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid, the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid. by the constantly experiment and grabbling the different technology routes, we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid, and made its surface cladding quality very stable and reliable
本課題是基於整體提高電子管的質量和降低生產成本的要求，對電子管生產中的重要部分? ?柵極的表面處理技術進行改進和完善，主要在以下方面進行了深入研究:在鉬柵極表面處理方面，主要為實現降低柵極的熱電子發射和二次電子發射，通過不同工藝路線的不斷試驗和摸索，成功開發出柵極電泳tac 、 zrc和電鍍鉑黑的新工藝，使柵極的塗覆質量穩定可靠。 -
The empirical formula in the process of the secondary emission is analyzed ; the stabilization condition of vacuum surface flashover is deduced. the physics image of the vacuum surface flashover is described with the seea theory
本文分析了二次電子發射過程的經驗公式，推導了真空表面閃絡的穩定條件，以seea理論的觀點描述了真空表面閃絡發生的物理圖象。 -
The dust charging associated with the electron beams including the secondary emission of dust can dominate the dust surface potential in the close cathode region. in this case, dust of the same size can levitate at two different positions in the cathode
另外還發現：在考慮極板有強電子束發射和塵埃粒子本身的二次電子發射時，同一大小的塵埃粒子能夠懸浮在鞘層中兩個不同的位置。 -
A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente
電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。 -
The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )
影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。 -
According to secondary electron emission avalanche ( seea ) theory, the effects of insulating materials, shapes, electrode structures of vacuum insulator on surface flashover and its mechanism, design optimization methods for vacuum insulator to improve surface flashover voltage by selecting insulating material, shape and electrode structure are reviewed
摘要根據二次電子發射崩（ seea ）理論，綜述了真空絕緣子的絕緣介質材料、幾何形狀和電極結構對絕緣子沿面閃絡的影響和機理過程，以及從這三方面優化設計真空絕緣子以提高其沿面閃絡電壓的方法。
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