semiconductor amplifier 中文意思是什麼

semiconductor amplifier 解釋
半導體放大器
  • semiconductor : n. 【物理學】半導體。
  • amplifier : n. 1. 【電學】擴大器；擴音器。2. 放大鏡；放大器。
  1. In - phase wavelength conversion in semiconductor optical amplifier in critical lasing state

    基於半導體光放大器臨界激射狀態的同相波長轉換
  2. With the stringent requirement of low output voltage and high output current, semiconductor diode is necessarily replaced by synchronous rectifier to minimum voltage drop. because the existed driving schemes can not drive srs properly, two novel driving schemes for synchronous rectifiers in magnetic amplifier post regulating circuit are proposed in this paper

    已有的同步整流管驅動電路主要面對多路輸出的主輸出電路，而應用磁放大器調節的輔助輸出電路同步整流管的驅動，現有的方法存在磁放大器調節與同步整流管驅動的失配，降低了開關電源的效率。
  3. Detail specification for electronic components. semiconductor integrated circuit - cf3080 type transconductance operational amplifier

    電子元器件詳細規范.半導體集成電路cf 3080型跨導運算放大器
  4. We apply the agrawal ' s theory model of soa, and study the temporal characteristics of the output pulse for input picosecond optical pulses with different sharpness edges passing through a semiconductor optical amplifier, and find that the peak power and the pulse width of the output pulse depend on the input pulse peak power, the sharpness degree of the input pulse edge and the bias current of soa

    本文應用agrawal的關于soa理論模型，詳細研究了具有不同陡峭邊沿的皮秒超高斯光脈沖經soa后的時域特性的變化，發現輸出脈沖的峰值功率、脈沖寬度與輸入脈沖的峰值功率、輸入脈沖邊沿的陡峭程度以及soa的偏置電流密切相關。
  5. But up to now, none of them are commercially available. among these technologies, wavelength converters based on cross - gain modulation, cross - phase modulation and four - wave mixing in semiconductor optical amplifier is the mainstream of research

    其中，基於半導體光放大器中的交叉增益調制、交叉相位調制和四波混頻效應的波長轉換技術是研究的主流方向。
  6. Parallel dual - pump four wave mixing based on semiconductor optical amplifier

    基於半導體光放大器的平行雙泵浦四波混頻研究
  7. Semiconductor integrated circuits detail specification for type jb726 limit amplifier discriminator

    半導體集成電路. jb726型限幅放大鑒頻器詳細規范
  8. As the great reform and progress in a lot of techniques have been made in the new generation of semiconductor high - frequency power amplifier, valve power amplifiers are replacing by complete solid - state high - frequency linear power amplifiers gradually

    隨著新一代半導體高頻功率放大管的一些突破性變革和多種技術的推陳出新，電真空管功率放大器正在被全固態高頻線性功率放大器逐步取代。
  9. A novel polarization - insensitive semiconductor optical amplifier ( pisoa ) with graded strain bulk - like active structure has been designed and fabricated. we have analyzed their polarization insensitivity characteristics from the point of theory

    與中科院半導體所張瑞英博士等人一起，首次在國際上提出了用漸變應變結構作為半導體光放大器的有源區的研製工作。
  10. The actively and passive mode - locked fiber ring laser and two types of photonic switching, slalom ( semiconductor laser amplifier loop mirror ) and uni ( ultrafast nonlinear interferometer ) were developed. this thesis presented the principle and the requirements for the optical of frequency - shift sampling module under common conditions

    研製了作為光取樣脈沖源的主動鎖模和被動鎖模光纖激光器；半導體光放大器環鏡及超高速非線性干涉儀的光子開關，並進行了頻差法光取樣、異步光取樣及基於時分光取樣的光子模數轉換的實驗研究。
  11. In order to measure the characteristics of such semiconductor optical amplifier, we adopted a set of measurement system. this measurement system can be used to measure the characteristics of all kinds of active or inactive optical passive components. such device presents good polarization insensitivity ( < 0. 9db ), wide 3db bandwidth ( > 33nm ) at 0 - 200ma and different input signal light wavelength and power, the maximum fiber - to - fiber gain of 10db, lossless operation current of 50 - 75ma for different input signal light wavelength and power, large extinction ratio ( > 50db ) and lower noise figure ( nf ) ( < 8db )

    與張瑞英博士一起，首次利用該種有源區結構制備出偏振不靈敏半導體光放大器，並在0 - 200ma注入電流范圍內獲得33nm的3db帶寬，在不同信號波長，不同信號功率0 - 200ma的注入電流范圍內，偏振相關損耗均《 0 . 9db ，在耦合差損為7db / facet的條件下，最大fiber - to - fiher增益達10db ，無損操作電流為50 - 70ma ，消光比達50db以上，而噪聲指數則低於8db ，最小可達4 . 6db 。
  12. The results show that wavelength locates in gain zone of semiconductor optical amplifier, and have higher peak power and proper time delay between the two pulses for the second order super gauss control pulse in semiconductor optical amplifier. a high quality amplified signal pulse can be achieved. the chirp can be reduced notability by using cascading soa in cross gain modulation based on soa, and the distance and the peak power of conversion optical pulse can be increased notability, and we can let down the demand for wavelength based on xgm in soa and enhance the flexibility of wavelength conversion

    我們應用二階超高斯光脈沖與高斯信號脈沖同時注入soa和應用soa與非線性光學環鏡（ nolm ）相結合的方案來對信號脈沖進行壓縮整形，模擬顯示，在調節系統合適參數的情況下，波長位於soa增益區的二階超高斯控制光脈沖在具有較高的峰值功率和適當時延下輸入soa時，最後可以得到放大的高質量超簡訊號光脈沖；在基於soa的交叉增益調制（ xgm ）全光波長轉換中，採用級聯的soa能有效地使反轉光脈沖的頻率啁啾得到有效降低，波長向下轉換的距離和反轉光的峰值能量都得到明顯提高，降低了利用交叉增益調制（ xgm ）波長轉換中對波長精度的要求，從而提高了波長轉換的靈和性。
  13. Detail specification for electronic components. semiconductor integrated circuit - cf715 type high - speed operational amplifier

    電子元器件詳細規范.半導體集成電路cf715型高速運算放大器
  14. Semiconductor integrated circuits detail specification for type jb523 wide - band logarithmic amplifier

    半導體集成電路. jb523型寬帶對數放大器詳細規范
  15. Integration of optical communication devices is the development direction of current optical communication system. erbium - doped optical waveguide amplifier is a novel optical amplifier after erbium - doped fiber - optic amplifier and semiconductor optical waveguides amplifier, it has received great attention for gain at 1. 535 m

    工作於1 . 55 m光通信窗口的摻鉺集成光波導放大器（ edwa ）是繼摻鉺光纖放大器（ edfa ） 、半導體光放大器之後的又一新型光放大器，近年來引起人們極大的興趣。
  16. Scalable optical switch array based on semiconductor optical amplifier

    基於半導體光放大器的可擴展型光開關矩陣
  17. The traditional molecular pump with popular bearing can not meet the challenge of semiconductor manufacturing because of the vibration, short life, unpure vacuum and so on. so it is very important to design the magnetic bearing and power amplifier for molecular pump

    本課題研究的目的是，解決傳統軸承型分子泵應用在半導體製造行業時出現轉速低、壽命短、真空不潔凈等問題，設計分子泵的磁懸浮軸承結構和功率放大器，對實現分子泵在半導體工業中的良好應用有著重要的意義。
  18. For long - haul high bit rate trunk line optical fiber communication system and metro optical fiber network, a semiconductor optical amplifier ( soa ) is the most promising component due to its all kinds of properties and small dimension, compactiveness, low drive voltage, such as in optical network solutions, polarization - insensitive semiconductor optical amplifier ( pisoa ) is a popular candidate as optical gates. but the polarization - insensitivity over large wavelength range is requested. the purpose of this thesis is to develop a soa which is polarization - insensitive and has large 3db bandwidth

    隨著寬帶傳輸和寬帶接入以及全光網的組建和發展，大帶寬偏振不靈敏半導體光放大器（ semiconductoropticalamplifier ， soa ）由於其易於與其它器件集成，體積小，具有快的動態增益響應，非線性好，飽和輸出大，可實現無損操作等特點，在光通信網路中，成為光纖通信發展，全光網組建以及wdm 、 tdm技術成熟的關鍵部件之一，其中偏振不靈敏和大的3db帶寬是性能優良soa的重要指標，也是制備的技術難點。
  19. The recent research and development situations of the optical fiber amplifier including erbium doped fiber amplifier ( edfa ), thulium doped fiber amplifier ( tdfa ), raman fiber amplifier ( fra ) and semiconductor optical amplifier ( soa ) domestic and abroad are described, and the trend of the amplifiers are discussed, the characteristics of them are compared

    摘要介紹了國內外光放大器的最新研究動態，主要包括摻鉺光纖放大器、摻銩光纖放大器、光纖喇曼放大器及半導體光放大器，並指出相關放大器的發展趨勢，最後對光纖放大器的特性進行了比較分析。
  20. In this dissertation, a boa - type waveguide optic switch with double - heterostructure gaas / gaalas has been researched. gaas - based integrated optical devices have good temperature, good anti - radiation and optical - transmission characteristics, and also have wide transparent range of wavelength. they can also be integrated on a chip with optical active devices and electronic devices, such as semiconductor laser, optical modulation, optical amplifier, pin, and so on

    基於gaas材料的集成光學器件不僅具有良好的光傳輸特性、溫度特性、抗輻射能力和其較寬的透明波長范圍，還有望進一步實現晶元與光源、光調制器、光探測器和半導體光放大器等其它光電器件以及集成電路的單片集成；採用gaas gaalas雙異質結材料製作的光開關可以得到較低的開關電壓，而且採用gaas gaalas異質結材料的光傳輸損耗很小。
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