semiconductor compound 中文意思是什麼

semiconductor compound 解釋
半導體化合物
  • semiconductor : n. 【物理學】半導體。
  • compound : vt 1 使混合，調合，配合；【語言學】復合，合成。2 （通過互相讓步等）解決（糾紛）；用錢了結（債務等...
  1. High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc

    高純度金屬鎵是生產化合物半導體材料的基礎材料，同時它還可以用於生產超導材料、合金材料、永磁材料等。
  2. Binary compound semiconductor

    二元化合物半導體
  3. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  4. Compound semiconductor materials

    化合物半導體材料
  5. Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature

    碲鋅鎘（ cd _ （ 1 - x ） zn _ xte ，簡寫czt ）單晶體是一種性能優異的三元化合物半導體室溫核輻射探測器材料，具有閃鋅礦型的面心立方結構。
  6. Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band

    Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。
  7. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。
  8. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  9. Testing of materials for semiconductor technology - determination of dislocations in monocrystals of iii - v - compound semi - conductors - part 1 : gallium arsenide

    半導體工藝材料的檢驗. -化合物單晶體錯位的測定
  10. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  11. They have been widely used in optical - fiber communication, satellite communication, super high speed computer, high speed measurement instrument, mobile communication, etc. since gaas is compound semiconductor, it is difficult to achieve high quality gaas crystal

    Gaas器件與電路具有速度高、功耗低、噪聲小、耐高溫、抗輻射等優點，在光纖通信、衛星、超高速計算機、高速測試儀器、移動通信和航空航天等領域中有著重要的應用。
  12. Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的的寬禁帶-族半導體材料，室溫下能帶帶隙eg為3 . 37ev 。
  13. Zinc oxide is a ii - iv wide band - gap ( eg = 3. 37ev ) compound semiconductor with wurtzite crystal structure

    六角纖鋅礦結構的氧化鋅是一種重要的寬帶隙-族半導體材料，室溫下帶隙為3 . 37ev 。
  14. The material studied in this paper is a novel kind of semiconductor material which is fabricated by incorporating magnetic transition metal ion mn + into ih - v semiconductor compound gaas

    本論文所研究的dms材料便是由磁性過渡族金屬離子mn ~ +摻入-族半導體化合物gaas中而形成的一類新的半導體材料。
  15. So the study and use of compound powders and thin films get more and more regards. among them the double layered structure nanocompound semiconductor become the focus of study by their high photocatalytic efficiency, fast reaction speed etc. it has been confirmed that the potassium niobate ( k4nb6o17 ) is an excellent semiconductor photocatalyst. its special construction consists in the ion k + in the interlayer can be replaced by other cations, which providing vast space of modifying the material

    層狀化合物中的鈮酸鉀k _ 4nb _ 6o _ （ 17 ）已被證實是一種性能優異的半導體材料，具有光催化和光電轉換性能，其獨特的結構是處于層間的帶正電的k ~ +可以被其它陽離子所替代，正是由於其多元素、復合型的特點，為材料的修飾和改性提供了廣闊的技術空間。
  16. Electrical, electronic, semiconductor, epoxy molding compound, paint, coating, ceramic, chemical, building, foundry, precision casting, refractory and abrasives industries etc. the

    硅石，石英石熔融石英粉硅微粉天然水晶粉等，這些產品均是光學玻璃電子
  17. Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s, this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically

    本文基於gaas等?族化合物半導體的轉移電子理論，結合半絕緣gaas光電導開關中特有的lock - on效應的研究，提出了類似於耿疇（高場疇或偶極疇）的單極電荷疇理論模型，對光電導開關lock - on效應的各種現象給出了理論解釋。
  18. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
  19. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  20. A brief introduction to semiconductor spintronics that includes magnetic semiconductor, magnetic / semiconductor compound structures, spin phenomena in the non - magnetic semiconductor quantum well and nanostructures, and spin injection into semiconductor etc. is given

    摘要簡單介紹了半導體自旋電子學的研究對象和內容，主要包括磁性半導體、磁性半導體復合結構、非磁性半導體量子阱和納米結構中的自旋現象，以及半導體的自旋注入等。
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