semiconductor devices 中文意思是什麼
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Semiconductor devices - part 7 : bipolar transistors
半導體裝置.第7部分:雙極晶體管 -
Heat sink of semiconductor devices - generic specification
半導體器件散熱器通用技術條件 -
Heat sink of semiconductor devices - heat sink, extruded shapes
半導體器件散熱器型材散熱器 -
Heat sink of semiconductor devices - heat sink, staggered fingers shapes
半導體器件散熱器叉指形散熱器 -
This paper analyses the numerical simulation problems of the semiconductor devices deeply. a one dimensional pn junction diode is worked out satisfyingly by the recursive method with the matlab5. 3 software
論文深入的分析了半導體器件的數值模擬問題，利用matlab5 . 3等計算機工具，用解三對角矩陣方程的遞歸演算法，實現了pn結二極體的一維求解，取得了比較滿意的結果。 -
Semiconductor devices. harmonized system of quality assessment for electronic components. ambient rated photocouplers with phototransistor output. blank detail specification
半導體器件.電子器件質量評估協調體系.帶光電晶體管輸出的特定環境溫度光電耦合器.空白詳細規范 -
Thermistors are semiconductor devices whose resistance varies with temperature.
熱敏電阻是一種半導體元件，它的電阻隨溫度而變化。 -
Semiconductor devices can perform a variety of control functions in electronic equipment.
半導體器件在電子設備中能起各式各樣的控製作用。 -
That is the reason that all over the countries have never stopped researching for mask jamming technology of radar. at present, the mask jamming source mainly comes from the thermal noise and zener avalanche noise of semiconductor devices. but the noise ’ s quality isn ’ t stabile because of the differences of semiconductor devices each other and the changes of exterior conditions
目前採用的遮蓋性干擾的噪聲源主要來自半導體器件本身的熱噪聲或齊納雪崩噪聲，但各器件本身的不一致性和外界條件變化等因素使噪聲輸出質量不穩定;同時由於此類信號不能再生，不利於科學研究。 -
Semiconductor devices - mechanical and climatic test methods - rapid change of temperature - two - fluid - bath method
半導體裝置.機械和氣候試驗方法.溫度速變.雙流體浸泡法 -
Semiconductor devices - mechanical and climatic test methods - part 11 : rapid change of temperature ; two - fluid - bath method
半導體器件.機械和氣候試驗方法.第11部分:溫度的急速變化.雙液電鍍槽法 -
Semiconductor devices - mechanical and climatic test methods - part 11 : rapid change of temperature - two - fluid - bath method
半導體裝置.機械和氣候試驗方法.第11部分:溫度的急速變化.雙液電鍍槽法 -
Semiconductor devices - mechanical and climatic test methods - part 11 : rapid change of temperature ; two - fluid - bath method iec 60749 - 11 : 2002 ; german version en 60749 - 11 : 2002
半導體器件.機械和氣候試驗方法.第11部分:溫度驟變 -
Firstly. operation principle of induction heating is introduced and the actuality of the power supply for induction heating is summarized. then, the scheme of structure of the power supply is established : uncontrolled rectifier and buck chopper constitute dc circuit. in this part, operation principle of a kind of soft switching buck chopper is presented mainly and the conclusion that the power semiconductor devices operate in soft switching is also illustrated by analysing the operation principle of all stages ; series resonant inverter is selected as inverter circuit via comparing the advantage and shortcoming of parallel resonant and series resonant. moreover. the work principle of series resonant inverter is analysed and the calculating method of the best dead time is put forward as well
文中首先介紹了感應加熱電源的工作原理並綜述了國內外的研究現狀。接下來分析並制定了電源主電路的構成方案：在對比幾種功率調節方式的基礎上選擇了不控整流加斬波調壓作為直流部分。在這部分里，重點研究了一種軟開關buck變換器，通過分析各階段的工作原理說明了開關器件如何工作在軟開關狀態；對于逆變器部分，在比較了串、並聯逆變器優缺點的基礎上選擇了串聯諧振逆變器，並詳細分析了串聯逆變器的工作原理，提出了最佳死區的計算方法。 -
Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention
Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。 -
Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices
3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。 -
Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - generic specification
半導體器件.集成電路.混合集成電路和薄膜結構.生產線認證.總規范 -
Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - blank detail specification
半導體器件.集成電路.混合集成電路和薄膜結構.生產線認證.空白詳細規范 -
Semiconductor devices - integrated circuits - hybrid integrated circuits and film structures - manufacturing line certification - procedure for qualification approval
半導體器件.集成電路.第23 - 5部分:混合集成電路和薄膜結構.生產線認證.合格鑒定規程 -
Semiconductor devices - integrated circuits - part 23 - 5 : hybrid integrated circuits and film structures ; manufacturing line certification ; procedure for qualification approval
半導體器件.集成電路.第23 - 5部分:混合集成電路和薄膜結構.生產線認證.鑒定批準
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