semiconductor fabrication 中文意思是什麼

semiconductor fabrication 解釋
半導體集成電路製造
  1. A review of the development of organic semiconductor composite photo - conductive materials and devices was followed by a proposal of the researching theme in this thesis. the effects of fabrication arts such as solvents, gradient, interfacial layer and configurations on the photoconductive properties of the single - layer chlorodiane blue azo / tiopc composite photoreceptors were systematically studied in chapter ii. the results showed that the solvent played a decisive role in the multiphase and multicomponent system composed of two photogeneration species ( chlorodiane blue azo and tiopc ), a transporting material ( hydrozone ) and polymer binder ; 1, 4 - dioxane, as an amphiphilic solvent can effectively disperse and stabilize such multiphase and multicomponent systems, the derived photoreceptors presented improved photoconductive properties superior to those of dual - layer counterparts and demonstrated the evident synergetic enhancement and complementary effects ( eg

    結果表明:在由兩種光生材料氯丹藍偶氮和酞菁氧鈦、傳輸材料萘苯腙以及聚合物介質組成的多相多組分復合體系中,分散溶劑是至關重要的因素,二氧六環作為典型的雙親性溶劑,有效地分散和穩定了該多相多組分復合體系,得到的復合單層光導體的光敏性在整體上優于雙層光導體,復合材料在可見光和近紅外光區分別表現出的偶氮和酞菁氧鈦的光敏性(如azo / tiopc = 8 / 2 , cgm / ctm / pc = 1 / 120 / 120時,具有明顯的互補效應;在近紅外光區明顯高於酞菁氧鈦與偶氮光敏性的線性加和,表現出協同增強正效應。
  2. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值,這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  3. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片,將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術,具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點,可有效解決單片光電集成器件( oeics )中光、電兩部分的工藝兼容這一難題。
  4. Scheduling rule for batch processing machines of semiconductor wafer fabrication facilities

    半導體生產線批加工設備調度規則
  5. Therefore, the waveguide optical modes in the semiconductor lasers with different waveguide structures are investigated by means of optical waveguide theory. with the development of fabrication and packaging techniques, the dimensions of optoelectronic and photonic systems have become smaller and smaller. the far - field radiation models are no longer suitable for the near - field distribution of semiconductor lasers

    隨著製作工藝和封裝技術的發展,光電系統和光子系統的尺寸越來越小,半導體激光輻射的遠場模型不再適合其近場特性的分析;而且,半導體激光器可以作為近場虛擬光探針,應用於近場光學高密度存儲、納米光刻、近場光學成像以及光譜探測等領域。
  6. As a direct wide - band - gap ii - vi semiconductor, znse single crystal has been identified as an important contender for the fabrication of blue - green light - diodes, nonlinear optic - electronic components and infrared devices

    Znse作為最重要的寬禁帶-族半導體,其單晶在蘭綠光發射器件、非線性光電器件和紅外器件方面有著廣泛的應用。
  7. According to the characteristics of dynamic bottleneck in semiconductor wafer fabrication system ( swfs ), a dynamic bottleneck real - time dispatching ( dbrd ) strategy was proposed

    摘要針對半導體晶圓製造系統中瓶頸設備動態漂移的特性,提出一種動態瓶頸實時派工策略。
  8. Manufactures diodes, leds and led products, bridge rectifiers, film capacitors, lamps, quartz tubing and quartz fabrication, semiconductor epitaxy and refractory metals. online product specifications and rfq

    -浙江樂清科達通訊有限公司是一家專業生產公話機配件的廠家,主要產品有公話機的手柄掛叉鍵盤等
  9. Standard for the protection of semiconductor fabrication facilities

    半導體生產設施的防護標準
  10. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻,反應離子刻蝕和剝離等技術制備半導體和金屬納米結構,很好地解決了普通光刻與電子束光刻的匹配問題,提高了加工效率,經過多次的工藝實驗,摸索出一套制備納米結構的工藝方法,首次用電子束光刻,反應離子刻蝕和剝離等技術制備出了多種納米結構(硅量子線、量子點,雙量子點和三叉指狀的金屬柵結構) 。
  11. Hwang yh, chen hc, worker ' s exposure to arsenic in the maintenance of ion implanters of semiconductor fabrication facilities. 3rd international scientific conference on prevention of work - related musculoskeletal disorders and 13th international symposium on epidemiology in occupational health, september 21 - 25, helsinki, finland

    陳相志、黃耀輝,晶圓製造廠離子植入機臺維修保養工作之砷暴露研究, 1998年工業衛生學術研討會, 1998年三月21 ~ 22日,中國醫藥學院,臺中
  12. Vacuun deposition technology in organic semiconductor device fabrication

    有機半導體器件的真空鍍膜技術
  13. The emphases is put on the operator staffing problem in semiconductor wafer fabrication and the decisions in two situations long - term and short - term using simulation method not traditional static model were brought forward

    摘要對半導體製造中員工人數的配置問題進行了研究,提出了操作工人數的長期決策和短期決策兩種情況,並用模擬模擬的方法對操作工數量需求進行動態研究,而非傳統的靜態模型。
  14. We are dedicated to becoming the top - rated supplier at each of our customers in the electronics value chain - from semiconductor fabrication, to device packaging and complete module and system assembly

    從半導體製造、元器件封裝到電子模塊的裝配與保護,道康寧提供的創新性解決方案可應用於電子產業價值鏈的各個環節。
  15. 780 covers statistical modeling and the control of semiconductor fabrication processes and plants

    780含括統計模式建構,半導體製造流程及設備控制。
  16. Fabrication of molecular computer seems to be the only way to break through the limits of conventional semiconductor electronic computer

    研製分子計算機也許是突破傳統半導體電子計算機發展極限的唯一出路。
  17. As a wide bandgap semiconductor material, silicon carbide is an exellent material with superior thermal, electrical, mechanical and chemical properties for the fabrication of high temperature, high power, high frequency and radiation hardening electronic devices

    Sic是一種寬帶隙半導體材料、第三代半導體材料的代表,是製造高溫、高頻、大功率、抗輻照等半導體器件的優選材料,又被稱為極端電子學材料,在微電子學領域具有廣闊的應用前景。
  18. In the fabrication of diffractive optics elements and semiconductor, it is demonstrated that an initial edger can expand into smooth curves and the surface motion in different local place is not identical

    在製作衍射光學元件以及半導體加工的刻蝕工藝中,刻蝕產生的表面面形隨刻蝕時間的延長而產生動態的形變。
  19. Attracting foreign investments in constructing semiconductor chip fabrication plants

    吸引外資興建半導體晶片製造廠
  20. Contribution on chapter 6 ( diffusion ) and chapter 7 ( ion implantation ) of “ fundamentals of semiconductor fabrication ” textbook by g. s. may and s. m. sze, publication in 2003, p105 - 143, wiley

    修正第13章,半導體元件物理與製作技術,施敏原著、黃調元譯, 91年9月出版,交通大學。
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