semiconductor single crystal 中文意思是什麼

semiconductor single crystal 解釋
半導體單晶
  • semiconductor : n. 【物理學】半導體。
  • single : adj 1 僅只一個的，單獨的；單式的；【植物；植物學】（花等）單瓣的；【無線電】單工的，單次的。2 獨...
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  1. Single crystal silicon is the semiconductor material which is used mostly in the present electronic industry, it play a very important role in the field of aviation - astronavigation, optics, electron and micro - electronics

    單晶硅材料是當代電子工業中應用最多的半導體材料，它在航空航天、光學、電子和微電子等領域發揮著十分重要的作用。
  2. Cadmium selenide ( cdse ) single crystal is regarded as one of the most promising materials for room temperature nuclear radiation detectors, but cdse detectors have not been studied in detail because of the lack of high quality cdse single crystals and suitable technology for this semiconductor and the devices

    Cdse單晶體是最有前途的室溫核輻射探測器材料之一，但由於沒有制備出高質量的cdse單晶體，加上沒有成熟的半導體材料加工技術與器件製作工藝，人們對cdse探測器沒有進行深入的研究。
  3. Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature

    碲鋅鎘（ cd _ （ 1 - x ） zn _ xte ，簡寫czt ）單晶體是一種性能優異的三元化合物半導體室溫核輻射探測器材料，具有閃鋅礦型的面心立方結構。
  4. Testing of materials for use in semiconductor technology ; detection of crystal defects and inhomogeneities in silicon single crystals by x - ray topography

    半導體工藝使用材料的檢驗.第1部分:用x射線外形測量
  5. It fits smd surface crystal, optic crystal, optic glass, semiconductor silicon slice, quartz crystal slice, piezoelectricity porcelain, arsenide gallium, linb03, molybdenum slice and metal, nonmetal brittleness material both single side polishing and rubbing of pressurizing cmponets

    本機主要適用於矽片、石英晶片、 smd表面貼裝晶體、光學水晶、鈮酸鋰、玻璃、陶瓷片等薄脆金屬或非金屬材料的雙面研磨或拋光。
  6. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。
  7. As a direct wide - band - gap ii - vi semiconductor, znse single crystal has been identified as an important contender for the fabrication of blue - green light - diodes, nonlinear optic - electronic components and infrared devices

    Znse作為最重要的寬禁帶-族半導體，其單晶在蘭綠光發射器件、非線性光電器件和紅外器件方面有著廣泛的應用。
  8. Its potential and maximal application field is for semiconductor films and optic films that mainly rely on the high - orientation and single crystal diamond films and big area transparent diamond films. but it is widely existent for defects in the process of diamond films growth and also it is difficult to get parameters stability such as temperature etc in wide area, as a result, the diamond films " orientation is changed, and it is very difficult to get the high - orientation and single crystal diamond films and big area transparent diamond films

    金剛石膜潛在的最大應用領域是作為半導體薄膜和光學薄膜，而這個領域的開發在很大程度上依賴于高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得，但由於金剛石膜生長過程中缺陷的普遍存在以及大面積范圍內均勻溫度場等參數的難以獲取，從而導致金剛石膜的取向發生改變，使高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得十分困難。
  9. Test methods for determining the orientation of a semiconductor single crystal

    半導體單晶晶向測定方法
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