semiconductor substrate 中文意思是什麼

semiconductor substrate 解釋
半導體襯底
  • semiconductor : n. 【物理學】半導體。
  • substrate : n. 1. 底層，地層。2. 【無線電】（半導體工藝中的）襯底，基底。3. 【生物學】（生態學中的）基層；【生物化學】受質；被酶作用物。
  1. Calculation of the lattice mismatch between semiconductor epitaxy and substrate

    半導體外延層晶格失配度的計算
  2. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  3. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  4. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。
  5. An automatic flip chip bonder is a precision instrument used to align and bond one or more dies onto a substrate in semiconductor industry. it develops for the mass production of ic, mems and moems with small feature sizes and high precise bonding demands. an alignment system is one of the key components in flip chip bonders

    全自動倒裝貼片機（ flipchipbonder ）是半導體生產工藝中完成晶元和基底對準、鍵合的高精度自動化設備，適合於特徵尺寸小，鍵合精度要求高的ic （ integratedcircuit ） 、 mems （ microelectromechanicalsystem ） 、 moems （ microopticalelectromechanicalsystems ）等的大規模生產。
  6. The calculation way of the lattice mismatch through a new simpilied model between semiconductor epitaxy and substrate are analysed, and the way of determine the lattice mismatch in xrd are also discussed

    結果表明，正三角形晶格和長方形晶格匹配，長方形晶格的寬列原子的匹配具有優先性，不受長列原子匹配的影響。
  7. Usually, gaas is employed as substrate for the growth of wide band - gap ii - vi semiconductors due to their similarities in lattice constant. however, as a mature semiconductor material, si has serves electronics greatly

    以往的寬帶-族半導體都是以gaas為襯底材料的，這就造成了寬帶-族半導體光電子材料與si基微電子技術的分離。
  8. The inductor, which is one of the most important magnetic components, is not only used in lc filter and choke but also in rf communication circuit. the thin film inductor can be integrated with semiconductor components, so far it has not been widely used in these fields, the reason is the limited of thin - film material and substrate, process technology and design technology. designing and fabricating thin film inductor is the key point of this paper

    而作為磁性元器件中最重要的電感，它不僅在lc濾波電路、扼流圈中必不可少，在現代射頻通信電路中也被廣泛使用，特別是能與硅器件一起集成的薄膜電感器，在國際上備受重視，而國內長期以來，由於受薄膜磁芯材料、繞組材料、基片材料，包括製作技術及最為關鍵的設計技術限制，尚未研發出能夠用於這一應用領域的高、中、低頻薄膜電感器。
  9. Microelectronic circuits in which the passive components and their metallic interconnections are formed directly on an insulating substrate and the active semiconductor devices ( usually in wafer form ) are added subsequently

    一種微電子電路器件，其中的無源元件及內部金屬連線直接在絕緣襯底上形成，然後再加上有源半導體器件（通常以大圓片形式給出） 。
  10. At the part of experiment, we study the wet - etching technique of glass substrate, based on semiconductor process, which includes photolithography and etching

    實驗部分研究了基於半導體工藝的玻璃濕法刻蝕技術。包括玻璃面板上的光刻和刻蝕。
  11. Zinc oxide ( zno ) is a wide band gap ( 3. 4ev ) semiconductor with the hexagonal crystal structure ( wurtzite type ). zno thin films with the c - axis orientation perpendicular to the substrate show excellent piezo - electrical properties and are widely used in piezo - electrical filed. and the dense anjd uniform surface of the films is required when zno thin films are used as integrated functional films

    Zno屬於六方晶系6mm點群，晶體在c軸垂直面上的電性和彈性都是對稱的，因而c軸擇優取向的多晶薄膜能夠具有單晶那樣的壓電性和光電性質，而具有平整均勻的表面形貌則是zno薄膜作為一種集成功能薄膜應用性能的保證。
  12. It ' s a method to realize system integration. the hdi substrate is critical to mcm. aluminum nitride ( a1n ) has been considered as a material for ceramic packaging in view of the recent trends in the semiconductor industry toward higher speed, power dissipation and packaging density

    Mcm還能夠實現電子系統的小型化、高密度化，是實現系統集成的重要途徑，在mcm中高密度布線的多層基板技術是實現高密度封裝的關鍵。
  13. A monolithic microwave integrated circuit ( mmic ) is a microwave circuit in which the active and passive components are fabricated on the same semiconductor substrate. mmic, having advantages of small size, light mass, high reliability and excellent reproducibility, finds use in a variety of microwave system, especially in airborne radar and space applications

    單片微波集成電路（ mmic ）是將有源元件和無源元件都集成在同一個半導體襯底上的微波電路；具有尺寸小、重量輕、可靠性高、生產重復性好等優點，廣泛應用於各種微波系統，特別是機載雷達和衛星通信等方面。
  14. A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by cvd, while supplying a first process gas for film formation and. a second process gas for reacting with the first process gas to a process field accommodating the target substrate

    本發明揭示一種用於半導體製程之薄膜形成方法，其系配置成藉由cvd在目標基板上形成薄膜，同時將用於薄膜形成的第一製程氣體及用於與該第一製程氣體反應的第二製程氣體供應至一容納該目標基板的製程區域。
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