shift gate 中文意思是什麼
shift gate
解釋
移位門-
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
A novel quantum neural computational model is constructed based on the universal quantum gates unit ( i. e. phase - shift gate and controlled not gate ), which acts as the basic computational component
研究以通用量子邏輯門組（即相移門和受控非門）作為計算基函數，構造新的量子神經計算網路模型。 -
Abstract : a new approach, gate - capacitance - shift ( gcs ) approach, is described for compact modeling. this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime. additionally, an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model. it is then combined with the gcs approach to develop a compact model for these effects. the model results tally well with numerical simulation. both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do
文摘:提出了一種新的建立集約模型的方法，即柵電容修正法.此方法考慮了新型效應對柵電壓的依賴關系，且可以對各種效應相對獨立地建模並分別嵌入模型中.另外，利用該方法和密度梯度模型建立了一個多晶區內量子效應的集約模型.該模型與數值模擬結果吻合.模型結果和模擬結果均表明，多晶區內的量子效應不可忽略，且它對器件特性的影響與多晶耗盡效應相反 -
Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大 -
The second part, which includes chapter 3 and 4, is designed to discuss the problem about geometric quantum computation : the study of the effective controlling and manipulating on the two - qubit conditional geometric quantum phase - shift gate and the realization of the two - qubit nonadiabatic conditional geometric quantum phase gate
第二部分包括第三章和第四章，這部分主要討論幾何量子計算問題：兩量子位條件幾何量子相移門的有效控制和操縱及兩量子位非絕熱條件幾何量子相位門的實現。 -
With recordable dvd technology now starting to take hold in the industry, a major shift away from read - only dvd products is widely anticipated. the rwppi booth is located in hall 6, close to the main gate. the top of the booth features a large rwppi logo, together with the dvd - r rw format logo and the compatible convenient reliable slogan for dvd - rw dvd - r products
Rwppi的展示區在靠近主門的6號大廳，展示區上方顯示有dvd - r rw的版本標識代表著dvd - rw dvd - r所具有的兼容方便可靠compatible convenient reliable特徵的圖標和放大的rwppi標識。 -
We also show the relationships between the frequency of the external laser fields and the transition of the qubit in the two - qubit conditional geometric quantum phase - shift gate, explaining in detail how the transition of the qubit depends on the the external laser fields and the states of the controlling qubit. we also detail the theoretical ideas which explain how to control effectivly the two - qubit conditional geometric quantum phase - shift gates through external laser fields
我們得到了外加激光場頻率跟兩量子位條件幾何量子相移門中的量子位躍遷之間的關系，詳細地說明了量子位的躍遷是怎樣依賴于外加激光場和控制量子位的狀態的，從理論上解釋了如何利用外加激光場有效的控制兩量子位條件幾何量子相移門。 -
3 the number of eco - jet agents ( customer service personnel ) in the newly built gate area will depend upon the total traffic during the eight hour shift
（新建大門區生態型噴氣式航班售票員（顧客服務人員）數量取決於8小時上班制的客流總量。 ） -
In chapter 3, we focus our attention on discussing the geometric phase ( berry phase ) of quantum state evolving adiabatically and the controlling mechanism about the two - qubit conditional geometric quantum phase - shift gate realized by using of the adiabatic geometric phase - shift
第三章，集中討論了量子態的絕熱演化幾何相（ berry相）以及絕熱幾何相移實現的兩量子位條件幾何量子相移門的控制機制。 -
Controlled phase shift gate
受控相位偏移閘 -
Phase shift gate
相位偏移閘
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