silicon circuit 中文意思是什麼
silicon circuit
解釋
硅固體電路-
Taking the silicon diode as an example, through an analysis of the diode ' s current - voltage characters and the avometer circuit, the writer finds out the reasons for the differences in the amount when measuring the positive direct current equivalent resistance with different ohm grades
摘要以硅二極體為例，從二極體的伏安特性及萬用表內部電路的角度，分析了用指針式萬用表的不同歐姆檔位測量二極體的正向直流等效電阻時，其值緣何不同。 -
On the stability of cmos circuit and silicon controlled rectifier
電路與可控硅電路的穩定性 -
Zero - cross circuit makes sure output synchronism signals drive silicon control
過零檢測電路保證了輸出信號零點同步驅動可控硅，降低電源污染。 -
As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications
另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。 -
In this paper, basic pneumatic - measuring theory and air circuit system working principle are introduced. the pneumatic - electric transducer employs a mpx5500dp silicon pressure sensor which converts air pressure signal into voltage signal, and displays on the electron column after the signal conditional circuit ’ s processing
本課題從分析氣動測量的基礎理論入手，研究氣路系統的工作原理，用mpx5500dp擴散硅壓力傳感器將氣體壓力信號轉換為電壓信號，進而研製成功一種氣電轉換器。 -
Chemical - mechanical - polishing ( cmp ) has been rapidly developing and finding extensive applications in the integrated circuit ( ic ) manufacturing industry for processing hard disk of computer and silicon wafer with super - smooth and flawless surface
集成電路（ ic ）製造工業中，化學機械拋光（ chemicalmechanicalpolishing ， cmp ）廣泛應用於計算機硬盤片、硅晶片超光滑無損傷表面的加工。 -
Integrated circuit ( ic ) ： small wafers of silicon etched or printed with extremely small electronic switching circuits ; also called chips
集成電路：刻有或者印有非常小的電子開關電路的小硅晶片；也稱作chips 。 -
In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology
為使二維振動傳感器在兩主軸方向的靈敏度大致相同，敏感元件採用高度對稱的四梁結構，其中每個軸向上均採用帶折疊梁的雙側叉指電容結構，採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件，具有高靈敏度、寬量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算，並利用有限元法進行了模擬分析，根據模擬結果得出了優化參數;在確定敏感結構的基礎上，研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析，利用差動測量技術得到由振動引起的微小電容變化量，經c - v介面電路進行相位調制處理，然後通過解調輸出與加速度成正比的電壓信號。 -
The silicon controlled trigger and it s auxiliary circuit could regulate simultaneously the controlling coil current of four series - parallel connected powers, so the purpose of making four powers output in step with was achieved, and the process of increasing progressively current after lighting arc and weakening current after going out arc was realized
利用可控硅觸發器及輔助電路可以同時調節串並聯在一起的四臺電源控制線圈的電流，達到四臺電源同步輸出的目的，並且實現了等離子弧噴塗引弧時電流遞增和熄弧時電流衰減的過程。 -
The paper synoptically and comprehensively introduces eddy current theory, equivalent circuit, excitation coils, test circuit and application of the eddy - current sensors. a feasible solution of motor core height control based on silicon steel sheet thickness measuring with double eddy - current sensors is presented
論文在系統全面的分析了電渦流傳感器的基本原理、等效電路、激勵線圈、測量電路及應用后，提出將雙探頭測厚系統應用於電機鐵芯疊控制。 -
In the third one we investigated the measure of minority carrier lifetime in silicon solar cells by the photo - induced open - circuit voltage decay ( ocvd )
該部分研究對工業化生產具有參考價值。第三部分研究了採用開路電壓法測量晶體硅太陽電池的少子壽命。 -
Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline materials. porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( qeic ), opening up the bright future for the vlic
多孔硅（ ps ）是近年來發展起來的一種新型硅基材料，具有與單晶硅材料大不相同的特性，例如，多孔硅可在近紅外和可見，甚至近紫外區輻射強烈的熒光，使得它可用來製造發光器件，並可望在解決光電子集成電子學的關鍵問題，為製造帶有光源的大規模集成電路等方面開辟新的途徑。 -
Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )
隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。 -
Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established
鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。 -
This paper mainly described the research on rheological property, high thermal stability, flame retardant, the influence of catalyst and insulating heat conduction of organic silicon encapsulating materials, which greatly apply on electronic equipment and large scale integrated circuit and so forth
摘要本文主要綜述了國內外用於電子元器件、大規模集成電路等高科技領域的有機硅灌封材料在流動、耐高溫、阻燃和絕緣導熱等方面的性能以及催化劑對灌封材料的影響的研究應用進展。 -
It was first discovered that open - circuit voltage decay in multicrystalline silicon solar cells is smaller than that of in monocrystalline silicon solar cells through electron irradiation, which is explained from electron irradiation mechanism and the structure of multicrystalline silicon solar cells and also has not been reported
通過對晶體硅太陽電池電子輻照，首次發現多晶硅太陽電池的開路電壓衰減小於單晶硅太陽電池，從輻照機理和多晶硅太陽電池的結構解釋了該現象。本研究未見報道。 -
The image source is the hard core of hmd, the r & d of lcos ( liquid crystal on silicon ) and oled ( organic light emitting diode ) microdisplays needs to conquer many difficulties which related with material, fabrication, electronic circuit, optics and so on, these means a high technology barrier. the research on their control and drive technology is essential for the performance and operation, it is also very helpful for us to get our own intelligence property during the process of the hmd system design. the first chapter in this paper makes a full scale introduction about the concept, history, configuration & structure of hmd
Hmd的像源器件（即微型顯示晶元）是整個hmd系統中最重要的組分，現階段的主流像源「硅基液晶」 （ liquidcrystalonsilicon ， lcos ）與「有機發光」 （ organiclightemittingdiode ， oled ）微顯晶元在研發中需克服材料、工藝、電路、光學等諸多方面的困難，有較高的技術門檻，其驅動及控制技術的研究是整個hmd系統中不可或缺的一環，對hmd的性能、功能及使用方式等具有決定性作用，這同時也是開發具有自主知識產權樣機的必備基礎。 -
Our science park is up and running. occupancy there is very satisfactory, with 16 tenants from hong kong and overseas, notably silicon valley, signed up and more in the pipeline. we are beginning to see a clustering of electronics and integrated circuit design companies there
科學園現已落成啟用，租用情況十分理想，海內外共有16家公司簽訂租約，包括矽谷公司，另有多家機構正在磋商中，可見電子和集成電路設計公司將匯聚本港。 -
Integrated " inductors on silicon are designed and fabricated. s parameters of the inductors based equivalent circuit are investigated and the inductor parameters are calculated from the measured data
設計了實驗來驗證這一思想，成功制備了帶襯底結隔離的平面螺旋型電感，並測試和提取了其參數。 -
We define the recombination time of excess electrons in p field as the minority carrier lifetime. in theory, we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover, the effect of capacitance to general open - circuit voltage is also investigated. both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells, which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry
根據太陽電池的工作原理，詳細地論述了用脈沖光源照射n / p結太陽電池時光電壓的產生，理論上給出了注入p區的電子復合帶來的開路電壓與少子壽命的關系，也研究了n / p結勢壘電容放電對開路電壓衰減的影響關系，推導了利用開路電壓隨時間衰減的關系來測量少數載流子壽命的理論公式。
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