silicon complex 中文意思是什麼
silicon complex
解釋
硅絡合物-
Because of the large stuff of silicon, complex structure of furnace and expensive cost, computer simulation is a best way to optimize design. in order to study the new heat system, we have calculated the heat zone of 200mm solar cell czsi growth
由於拉晶過程中投料量較大，爐體結構復雜、造價昂貴，所以計算機數值模擬對于優化單晶爐設計是一種重要的工具。本論文用有限元方法對改造后單晶爐的適合的熱場進行了數值模擬。 -
It was found that nitrogen increased the fracture strength of silicon single crystal. we consider that the nitrogen may change the shockley band on silicon surface and form complex to influence the fracture procedure
本文從硅材料的基本概念入手，闡述了硅單晶材料的脆性斷裂、脆塑轉變以及在熱處理過程中的翹曲研究，並通過這三個部分進行實驗。 -
Effect of complex treatment of zinc - chromium coating by organic silicon sol on the corrosion resistance
有機硅溶膠復合處理的鋅鉻膜塗層 -
According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。 -
The technology used in the hbt production process is extremely complex ; advanced wireless semiconductor is one of only three companies in the world that possess this technology the other two are both located in the us. unlike the situation with other silicon chip products, japanese and korean manufacturers have yet to master hbt technology
德信科技成立於2001年，主要從事ic設計，並導入生產，生產過程中除晶圓代工和封裝測試是委外處理外，其餘皆由德信科技掌握，包括行銷。 -
With the increase of the amount of al, the intensity of the pl peak at 510nm increases. with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies, and 510nm peak originate from a complex co - function of al, si, and o. el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films, si - sio2 films, and al - sio2 films )
用不同的方法制備的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在較低的電壓萬均觀察到了室溫可見電致發光現象，峰位都在510nm左右，其峰位不因薄膜樣品內所含顆粒的種類、薄膜的制備方法、偏壓及后處理的影響，表明電致發光主要來源於電子和空穴在510 、基質中的發光中心的輻射復合發光。 -
Existing ways of printing devices at the nanoscale tend to be complex and expensive, and more appropriate for making silicon chips
以納米技術領域的列印設備的現有方式來製作矽片往往是復雜與昂貴的，而且更為合適。 -
Based on summarizing the actual research status, developing prospects, and the characteristic of different ways in preparation for silicon based composite, three ways were chosen, which was pyrolysis for si - phenolic resin prolyzed carbon material, using different catalyzer to prepare for si - o network coated silicon and carbon complex composite, easily chemical and deoxidizing reaction for super tiny metals mixed silicon and carbon complescomposite
通過高溫熱解法制備了硅-酚醛樹脂（ pf ， phenolicresin ）熱解碳材料。在700的條件下制備了硅-酚醛樹脂熱解碳材料，發現si和熱解碳的質量比為3 : 7時材料具有最優異的性能，首次脫嵌容量為394 . 7mah ? g ~ （ - 1 ） ，充放電效率為50 % 。 -
Test results showed 1 % silicon dioxide, ptfe3 % and calcium carbonate complex prescriptions ( calcium carbonate and rare earth compound particles are both 1 % ) have good effect on reducing the friction and wear, and has prominent role in industrial applications of high value
試驗結果表明:二氧化硅1 % 、 ptfe3 %配方和復合碳酸鈣（碳酸鈣和稀土元素各1 % ）配方具有突出的減摩抗磨作用，具有很高的工業應用價值。
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