silicon epitaxy 中文意思是什麼
silicon epitaxy
解釋
硅外延-
In order to get strain from the channel, by process, deposit si3n4 at nmos and adopt the silicon - germanium epitaxy on source / drain by pmos, can effective improve nmos and pmos electronic characteristic
中文摘要近年來，為了提升金氧半場效電晶體工作頻率及性能，尺寸不斷微縮，讓相同面積晶片可以擁有更多的電晶體數量。 -
These results provide important information for the epitaxy on porous silicon substrate and luminescence study of porous silicon
研究結果為多孔硅襯底上材料的生長和光學性能的研究提供了良好的實驗依據。 -
A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact
在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。 -
Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies
Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。 -
Many factors which affect the epitaxy qualities, especially the porosity of porous silicon and growth temperature, have been studied in detail. it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy. the defaults along { 111 } are the main defects in epitaxial silicon layer
深入研究了影響外延的各種因素，特別是多孔硅的孔隙率和外延溫度對外延層質量的影響，發現多孔硅的預氧化可以有效地阻止外延時b的擴散，外延層中主要的缺陷是沿著{ 111 }面生長的層錯。
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