silicon gate 中文意思是什麼
silicon gate
解釋
硅柵極-
Sariz international hotel located in the core areas of zhongguancun which known as " china s silicon valley ". the hotel is adjacent to the gate city mall, and between the north third ring road and north forth ring road, the largest life square in zhongguancun areas is just across the street
薩爾利茲國際酒店坐落於素有「中國谷」之稱的中關村核心地區，比鄰新中關購物中心，北三環與北四環之間，與中關村地區最大的生活廣場一街之隔。 -
Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1
結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。 -
In this experiment, we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft
本實驗在沉積柵氧化層后立即用pecvd進行多晶硅的氫化處理。 -
Applying silicon gate technology, the chip has a lower value in power consumption than the products made by aluminum gate technology
由於採用硅柵工藝，該晶元比市場上曾經流行過的鋁柵產品功耗更低。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
When the silicon technology comes to deep sub - micron level, the interconnect delay exceeds the gate delay ; and because of the increase of 1c work frequency, the allowable errors become smaller, and the influence of the transmission delay gets bigger, which increase the difficulty of the circuit design
在深亞微米製造技術中，晶元互連線延遲超過門延遲，而且隨著集成電路工作頻率的提高，允許的時序容差變小，傳輸延遲的影響加大，設計工作難度增加。 -
Scr silicon controlled rectifier - - a three - electrode solid - state device which permits current to flow in one direction only, and does this only when a suitable potential is applied to the third electrode, called the gate
可控硅整流器可控硅整流器? ?三電極固態元件，只有當匹配的電壓作用於第三電極（選通電極）時，才能夠保證電流朝一個方向流動。
分享友人