silicon transistor 中文意思是什麼

silicon transistor 解釋
硅晶體管。

  • silicon : n. ＝ silicium
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  2. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  4. Even the most optimistic proponents of ics believe that major innovations will be required to reach the ultimate operating limit of the silicon transistor : a length for functional features around 10 nanometers ( nm ), or about 30 atoms long

    即使是最樂觀的ic擁護者也認為，得有重要的創新，才能達到矽電晶體操作的最小尺寸極限：接近10奈米的圖案，或是差不多30個原子的長度。
  5. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  6. Ti introduces the silicon - based transistor which soon eclipsed germaninum devices in production volume

    Ti公司開發硅晶體管，從而在生產量上迅速超過鍺晶體管。
  7. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  8. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  9. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  10. Specification for silicon epitaxial wafer for microwave power transistor

    微波功率晶體管用硅外延片規范
  11. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  12. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  13. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  14. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范
  15. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  16. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范
  17. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  18. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  19. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
  20. In fact, the transistor consists of only a single piece of germanium or silicon with wires connected to it

    事實上，晶體管只是由一個鍺片或矽片構成的，導線都接在其上面。
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