silicon-bonded 中文意思是什麼
silicon-bonded
解釋
帶硅有機填充劑的-
Chemical analysis for silicon nitride bonded silicon carbide product. determination of free silicon content. molybdenum blue photometric method
氮化硅結合碳化硅製品化學分析方法.鉬藍光度法測定游離硅量 -
Research advances in lasers bonded on silicon substrates
硅基鍵合激光器的研究進展 -
The element hot zone is a self bonded silicon carbide
這種硅碳棒的發熱部是自發結合的碳化硅。 -
Sic whisker is incorporated in the raw material of reaction bonded silicon carbide ( rbsc ) to prepare sicw / sic composites. the effect of fabrication process on the microstructure and the properties of the sintered body are investigated in this paper. based on the research results on the sinter process, it is concluded that the sic whisker solve rapidly even at 1450
本課題將sicw引入反應燒結碳化硅（ rbsc ）體系，提出了一種制備高sicw含量sicw / sic復合材料的思路，研究了材料制備工藝對sicw / sic復合材料顯微結構的影響，討論了sicw / c坯體的反應燒結機理，對材料顯微結構與力學性能的相關性作了研究。 -
Compared with carbon, silicon nitride bonded silicon carbide has better oxidation resistance and bigger resistance ratio, which make it be a perfect line material of al electrolysis cell
在鋁電解方面，氮化硅結合碳化硅遠較陰極碳塊耐腐蝕、抗氧化、電阻率高，是理想的電解槽側壁內襯材料。 -
Bonded wafers - two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer
綁定晶圓片-兩個二過通片圓晶氧化硅層結合到一起，作為絕緣層。 -
For example, the silicon is etched anisotropically in the koh solution, the lucent al film is made with the magnetron sputtering system, the pressure hole is drilled by the supersonic stiletto machine and the silicon and the glass are bonded with electrostatic bonding setup
例如， koh溶液對硅的各向異性腐蝕，磁控濺射臺製作光亮的鋁膜，超聲打孔機製作導壓孔，靜電鍵合裝置對硅島膜與玻璃極板的陽極封接等等。 -
Special products of silicon carbide. slab of silicon nitride bonded silicon carbide
碳化硅特種製品.氮化硅結合碳化硅板 -
Chemical analysis for silicon nitride bonded silicon carbide product. determination of silicon nitride content. high pressure dissolve specimen method
氮化硅結合碳化硅製品化學分析方法.高壓溶樣法測定氮化硅量 -
Chemical analysis for silicon nitride bonded silicon carbide product. determination of silicon carbide content. high pressure dissolve specimen method
氮化硅結合碳化硅製品化學分析方法.高壓溶樣法測定碳化硅量 -
Chemical analysis for silicon nitride bonded silicon carbide product. determination of iron oxide content. o - phenanthroline photometric method
氮化硅結合碳化硅製品化學分析方法.鄰二氮雜菲光度法測定三氧化二鐵量 -
This paper is concentrated on preparing si3n4 / sic, si2n2o / sic and o ' - sialon / sic by reactive sintering techniques. the components of raw materials and microstructure of these three ceramics were studied. at the same time, molten al, cu, zn, mg and cryolite corrosion resistance of silicon nitride bonded silicon carbide were tested too
本論文通過成份及微結構設計，採用反應燒結工藝制備了力學和抗氧化性能優異的o ' - sialon sic 、 si _ 2n _ 2o sic和si _ 3n _ 4 sic陶瓷材料，並研究了它們的抗鋁、銅、鋅、鎂有色金屬熔體及冰晶石熔鹽侵蝕性能。 -
It does n ' t react with nonferrous metal and has a high thermal conductivity rate. its properties of thermal shock resistance, scour resistance and corrosion resistance are very excellent. so silicon nitride bonded silicon carbide is a eximious refractory of al, cu, zn, mg melting field
氮化硅結合碳化硅是近年來發展起來的特種高溫結構陶瓷材料，該材料不與有色金屬熔體潤濕，導熱率高、抗熱震性好、抗沖刷、抗金屬蒸汽侵蝕，是優質的鋁、銅、鎂合金熔煉及鋅冶煉行業用陶瓷材料。 -
Tags essentially consist of a plain antenna bonded to a silicon chip and encapsulated inside a glass or plastic module
標簽基本上是在一塊矽晶片上加裝簡單的天線，然後以玻璃或塑膠組件封裝。 -
Reaction - bonded sic was prepared by using melt silicon infiltrated carbon perform at 1500 c ; then evaporated the resist silicon at 1800 c for 2h in vacuum and the porous body of sic was attained. using melting mosi2 infiltrated sic body at 2050 c we got the desitive mosi2 / sic composite
將c質坯體在1500左右制得rbsc （反應燒結sic ）材料，採用真空下1800脫除rbsc中的殘余si的方法，獲得了多孔的sic坯體，用mosi _ 2在2050直接浸滲坯體得到了緻密的mosi _ 2 sic復合材料。
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