single electron transistor 中文意思是什麼

single electron transistor 解釋
單電子電晶體
  • single : adj 1 僅只一個的，單獨的；單式的；【植物；植物學】（花等）單瓣的；【無線電】單工的，單次的。2 獨...
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Thirdly, the paper researchs the application of single electron transistor and the synthesis theory of cicuit based on quantum dot cellular automata by synthesis example of quantum cellular neural network based on build schr ? dinger equation of coupling quantum dot. at last, the paper researchs digital integrated circuit design based on quantum dot cellular automata and design a 8 - bit quantum dot cellular adder by qcadsign based on a method of majority logic reducetion for quantum cellular automata, it prove this designer of 8 - bit quantum dot cellular adder is correctly

    Dinger ）方程為基礎的量子點細胞自動機電路綜合理論，本文以量子細胞神經網路為綜合實例，建立耦合量子點的薛定鄂（ schr ? dinger ）方程組，通過化簡得到類似細胞神經網路的非線性電路方程。最後研究了基於量子點細胞自動機數字集成電路設計，通過建立邏輯方程，簡化邏輯方程，並設計基於精簡qca擇多邏輯門8位加法器，並用qcadesign進行了模擬，實驗證明設計正確性。
  2. A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter. it takes 80c196mc single - chip as core processor

    電源變換器的功率開關器件採用現代電力電子功率器件igbt （ insulategatebipolartransistor ，絕緣柵雙極型晶體管） ，控制系統以80c196mc單片機作為控制核心。
  3. The paper are investigating several alternatives for example quantum dot cellular automata and single electron transistor to substitute conventional field effect transistors ( fet ’ s ) for ultra large scale integrated circuit ; and i take research on the modeling of single electron transistor and single electron cicuit

    基於以上考慮，本文研究一些新的基於量子力學原理的器件如量子點細胞自動機（ qca ） 、單電子晶體管（ set ）取代以fet器件為基礎超大規模集成電路，主要在單電子晶體管建模和單電子電路綜合做了一些研究工作。
  4. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  5. The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set, single electron memory, etc. ) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future

    納米結構的制備和納米電子器件（單電子晶體管、單電子存儲器等單電子器件）的研究是納米電子技術中最重要的研究內容之一，是最具有生命力、最具有發展前途，對未來新技術革命和產業可能帶來革命性作用的研究領域之一。
  6. I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v

    對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v
分享友人
分享到 Line

分享到臉書