single thin film 中文意思是什麼
single thin film
解釋
單層薄膜-
Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。 -
The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth
用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。 -
The product is two layers of limpness composite material of polyester thin film coated with bonding agent and single surface bonding of calendaring aromatic polyamide fiber paper
該產品是由聚酯薄膜塗以膠粘劑，單面粘合軋光聚芳酰胺纖維紙而成的二層柔軟復合材料。 -
There are better performances in the films prepared by ba2ca2cu3ox target than by ba2cacu2ox target. the single - phase tl2ba2cacu2o8 hts thin film was obtained with a tc0 of 107k at the optimal tl2o partial pressure and thallination temperature 750. on excursion from the optimal conditions, there exist some impurities in the resultant films resulting in a reduction in tc0 and surface quality with change in the microstructure morphology
研究結果表明，採用成分為ba2ca2cu3ox的靶材制備的薄膜性能要優于成分為ba2cacu2ox的靶材；使用組成式為tl1 . 9ba2ca2cu3oy的鉈片做鉈源時，形成的tl2o分壓達到最佳值；在最佳tl2o分壓和最佳鉈化溫度750的條件下，制備出了純相完全c軸取向的tl2ba2cacu2o8高溫超導薄膜，其tc0高達107k ，膜面均勻平整光滑，呈圓片狀組織；偏離最佳制備工藝參數的條件下，制得的薄膜中都含有一定量的雜相，雜相的生成使得tc0值下降，薄膜表面質量下降，薄膜組織形貌發生變化。 -
The purpose of this work is that preparing single - phase tl2ba2cacu2o8 hts thin film
本文以實現制備純相的tl2ba2cacu2o8高溫超導薄膜為目的。 -
Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively
利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。 -
With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility
隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。 -
In the early stage of experiment, an in - material thin film manganin gauge was studied. this in situ gauge was manufactured by single - step thin film processing, namely, manganin piezoresistance element was prepared on inorganic substrates such as ceramic, microcrystalline glass, etc by sputtering
在實驗的初期，本文還研究了「在位式」的錳銅薄膜傳感器，即首先在陶瓷或微晶玻璃基板上沉積錳銅敏感元件，然後用粘貼ptfe薄膜的方法完成傳感器的封裝。 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。 -
This patented process enables micron - scale precision patterning of optical thin film coatings on a single substrate
這種專利過程可以把有微型精確圖案的光學薄膜塗覆在單一基體上。 -
Superconducting mgb2 thin films were fabricated on single - crystal sapphire substrate by hfcvd and hpcvd, respectively. the experiments were carried out both in situ and ex situ. in situ method refers to acquiring mgb2 thin films directly during the deposition process. ex situ method is defined as obtaining mgb2 thin films indirectly by post - annealing of precursor b film in high mg vapor pressure at high temperatures
實驗分原位法和非原位法兩種工藝，原位法是在薄膜沉積過程中直接生成了mgb2超導薄膜；非原位法是先在基片上沉積前驅物b膜，然後將b膜在mg蒸氣中高溫退火得到mgb2超導薄膜。 -
On the basis of the underlying principles in the optical thin film design, by adopting the method of recursion and matrix, we get the mathematical model for the single layer antireflection coating and the multi - layer coating, which have their characteristic reflectance changes
以光學薄膜設計中的隱含規律為基礎，採用遞推法、矩陣法，分別對單層及多層增透膜的反射率變化建立了理論模型，並在特定的邊界條件下進行了求解和理論計算。 -
The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure
實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。 -
It is proved that the approximate single crystal hetero - epitaxial sbn thin film was not formed until heat - treated at 1000 ? on si substrate
只有在1000的退火溫度下才能在si襯底上生成近似單晶外延的sbn薄膜。 -
Sapphire resonator working in te011 + mode is used in this paper to nondestructively measure the microwave surface resistance rs of a single piece of hts thin film at 77k. the microwave surface of htsc film under test can be determined by measuring the change of the unloaded quality factors of the loaded resonator
本文就對超導薄膜的微波表面電阻的測試進行了系統的研究。本文介紹了一種利用te011 +模式的藍寶石介質諧振器測量高溫超導薄膜微波表面電阻的方法，通過測量加載超導薄膜前後介質諧振腔的固有品質因數的變化來確定超導薄膜的微波表面電阻。
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