soi process 中文意思是什麼

soi process 解釋
絕緣體上硅技術
  • soi : 硅絕緣體
  • process : n 1 進行，經過；過程，歷程；作用。 2 處置，方法，步驟；加工處理，工藝程序，工序；製作法。3 【攝影...
  1. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  2. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  3. Owing to their unique optical properties, such as low loss and large refractive index difference between silicon and silicon oxide, soi structures can not only be used to fabricate smart integrate photonic devices, but offer the ability to integrate photonic devices into the cmos integrated circuit ( ic ) process

    同時，它也具備許多優越的光學特性，比如低損耗（在通信波段） 、高折射率差，這使得它不但能用來製作靈巧緊湊的光集成器件，也為利用cmos微電子工藝實現光電集成提供了一個很好的平臺。
  4. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  5. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
  6. The dissertation focuses on the discussions of awg design method from the point of view of fabrications. the process tolerance abilities of silica - awg and soi - awg were calculated in detail

    論文從工藝角度出發探討了awg的設計方法，詳細地計算了二氧化硅材料和soi材料awg器件製作對工藝容差的要求。
  7. Abstract : according to the daga of crops yield and soil fertility changes of long term application of fertilizer and nutrients recycling obtained from ecological stations scatrtered in four typical areas under chinese academy of sciences and state minisetry of science and technology, the circulation ratios of organic carbon, phosphorus and nitrogen in the process of feeding - composting in were put forward in the agricultural system of black soi area, the ratios were about 0. 3, 0. 61 and 0. 49, respectively

    文摘:根據中國科學院和國家科技部分佈於四大類型地區的生態站進行的長期施肥及養分循環再利用的作物產量、土壤肥力質量變化研究數據，提出了黑土區農業系統投料中有機碳和磷、氮在飼養? ?堆腐過程中的循環率。
  8. Research on soi pressure sensor packaging process

    壓力傳感器封裝工藝研究
  9. A feasible way to produce soi material with located charge trenches was presented. the process programs of soi ldmos were finally given

    此外，設計具有局域電荷槽結構的soildmos器件的版圖和工藝制備流程，並進行工藝制備。
  10. The statement of intent ( soi ), signed on january 12 in beijing, between the u. s. department of energy ( doe ) and the caea, establishes a process for cooperation with each other and for collaborating with the international atomic energy agency ( iaea ) on a range of nuclear nonproliferation and security activities

    美國能源部與中國國家原子能機構1月12日在北京簽署的意向聲明，為雙方的合作以及為在一系列核不擴散和安全努力上與國際原子能機構（
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