source and drain 中文意思是什麼
source and drain
解釋
層連接晶體管柵極和源以及漏極-
Thus it created a conductive n channel between the source and drain.
這樣在源和漏之間就產生了一個導電的n型溝道。 -
In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points
在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
The structural elements of controlling reservoir forming in kenxi area are studied and estimated systematically, the vertical and plane evolution processes of sedimentary in kenxi area are set forth, time and space spread and its controlling factors of the hydrocarbon source rock and reservoir are analyzed, two types of hydrocarbon source rock ( es3, es4 ), two types of heavy oil, two periods of hydrocarbon generation, two periods of hydrocarbon drain, two stages of reservoir forming and five dynamic systems of reservoir forming are definite in kenxi area
對墾西地區油氣成藏構造要素進行了綜合地研究評價，闡述了其沉積縱向及平面演化過程，分析了生油層、儲集層時空展布及其控制困素，識別出本區有沙四、沙三兩套油源層，兩種類型的稠油，有兩個生烴期、排烴期、成藏期，五個成藏動力系統。 -
It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance
在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。 -
In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed
本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。 -
It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the sio
研究了場效應納電子晶體管構造過程中金屬電極的結構設計，源-漏電極高度sio -
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on
本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。 -
In order to do the research works above better, we must can precisely control the width of the quasi - 1d channel and the cut off point, and also must precisely inspire current in the 2deg, so we designed the 2 channel high precision and high stability voltage source, one channel can supply the minus voltage to the split - gate, and the other one can supply the offset voltage between the source and drain pole
為了進行上述研究，必須能夠精確的控制準一維電子通道的寬度和鉗斷，以及精確的在2deg上激勵電流，由此我們設計研發了給分裂門加負偏壓和給準一維電子通道加源漏偏壓的兩路高精度高穩定性饋源。 -
The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts
研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。 -
The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3
詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。 -
In this paper, the working principle of the interleaving two - transistor forward converter is analyzed in detail, and the waveforms of the switch drain - to - source voltage and transformer magnetizing current are researched in different duty cycle conditions. the simulation model is constructed and the simulation results verify the analysis
本文分析了交錯並聯雙管正激變換器的工作原理，研究了在不同占空比條件下開關管的漏源電壓和變壓器勵磁電流波形，建立了模擬模型，模擬結果證明理論分析的正確性。 -
As a result, the fermi level at the surface will shift towards the valence band maximum ( vbm ). accordingly the band bending increases, and the surface depletion layer thickness enhances, therefore, the channel thickness reduces. this is the main factor resulting in the decrease of saturated drain - source current
表面費米能級向價帶頂移動，能帶彎曲加劇，肖特基勢壘高度增加，表面耗盡層變厚，導電溝道變窄，是導致源漏飽和電流下降的主要因素。 -
In order to get strain from the channel, by process, deposit si3n4 at nmos and adopt the silicon - germanium epitaxy on source / drain by pmos, can effective improve nmos and pmos electronic characteristic
中文摘要近年來，為了提升金氧半場效電晶體工作頻率及性能，尺寸不斷微縮，讓相同面積晶片可以擁有更多的電晶體數量。 -
Small signal jfets work very well as low - leakage diodes by connecting drain & source together in log current - to - voltage converters and low leakage input protection
在對數電流-電壓轉換器和低漏電流輸入保護電路中，通過連接小信號jfets的漏極和源極，可以使之作為低漏電流二極體很好的使用。 -
In fet devices, the presence of an electrical field at the gate moderates the flow between the source and drain
在fet器件中，柵極電場的存在會調節源極和漏極之間的電流。 -
Ti ? the resistance measured across the channel drain and source ( or input and output ) of a bus - switch device
測量總線開關器件指定通道的源漏極間（或輸入和輸出）所得到的阻抗。 -
We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current, gave a expressions for studying the temperature characteristic of source - drain current, and deduced a ztc point expression
研究了溝長調制效應和漏致勢壘降低效應對漏源電流溫度特性的影響，給出了一個用於研究漏源電流溫度特性的電流公式；並推導了短溝道most的ztc點公式。 -
In order to obtain ideal efficiency, the rf mosfet sd2918 [ 4 ] is used. also, the dead - time is inserted between the drive signals of mosfets, which is effective for reducing the shot - through loss and drain - source capacitor cds loss
為了獲得理想的放大效率，採用射頻場效應管sd2918 [ 4 ] ；同時，在兩驅動信號之間引入dead - time ，減小mosfet的串通損耗以及mosfet的漏源輸出電容cds損耗。 -
Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain
有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。
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