substrate film 中文意思是什麼

substrate film 解釋
襯底膜
  • substrate : n. 1. 底層，地層。2. 【無線電】（半導體工藝中的）襯底，基底。3. 【生物學】（生態學中的）基層；【生物化學】受質；被酶作用物。
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. The light travels in a composite medium made up of the film, the substrate and the cladding.

    光在由薄膜，襯底和覆蓋層組成的混合介質中傳輸。
  2. A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film. a convictive explanation brought forward to illustrate the changing of the electrical ； properties of the ato thin film in different conditions

    在溫度較低時（ < 500 ） ，薄膜的方塊電阻隨成膜溫度的升高而降低；當基板溫度繼續升高，薄膜的方塊電阻隨基板溫度的升高而增大，這主要是因為玻璃基板中k ~ + 、 na ~ +離子向薄膜中的擴散。
  3. Fluoroplastic coating film on metal substrate

    金屬基片的氟塑料塗層膜
  4. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  5. The results indicate that the samples which is one step pretreated has the best adhesion and the thinnest mesosphere between the coating film and magnesium substrate

    結果表明，採用一步法前處理工藝的試樣，鍍層與基體之間具有良好的結合力，金相顯微觀察發現鍍層與基體之間具有最薄的中間過渡層。
  6. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  7. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  8. Adopting ni / si and tin / ni / si structure, the nisi film on the < 100 > si substrate by the means of rta has been demonstrated in detail

    文中詳細的闡述了採用ni si和tin ni si結構通過rta在硅單晶< 100 >襯底上制備nisi薄膜的方法。
  9. The 3d electrons increased with the content of mn doping increasing, and the electrical property increased accordingly as the electron transport path improved. it is confirmed that all the orthorhombic perovskite phase which is formed initially at the heat treatment temperature of about 600c and thoroughly above 850c are observed in the lcmto thin film deposited on si ( 100 ) substrate by rf magneto - controlled sputtering

    確認了採用射頻磁控濺射法于si （ 100 ）基板上生長的薄膜至多在600熱處理已開始形成晶相，形成的晶相全部是正交晶系鈣欽礦相，提高熱處理溫度，薄膜中晶相含量相對增大，高於850后晶相基本形成完畢。
  10. A planar film of refractive index nf is sandwiched between a substrate and a cover material.

    折射率為nf的平面薄膜夾在感光襯底和覆蓋層之間。
  11. In this paper, the al3 + - doped zno thin films were prepared on na - ca - si glass substrate ( microscope slides ) by sol - gel process from 2 - methoxyethanol solution prepared by zinc acetate as premonitor, monoethanolamine as stabilizator and aluminum chloride reaction. homogenous, transparent, polycrystalline zno thin film was formed finally by diping coating conducted for film - plate on substrate, drying, pre - heat - treatment, anealing

    所用的溶膠是以乙二醇甲醚為溶劑，醋酸鋅為前驅體，乙醇胺為穩定劑反應制得，用浸漬提拉法在基體上鍍膜，經烘烤、預燒、退火，最後形成均勻、透明的多晶zno薄膜。
  12. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  13. In order to improve the adherence of the film to the substrate and the repeatability of synthesis, we invent a three - step approach, which comprised the steps of turbostratic boron nitride ( tbn ) turning into rhombohedral boron nitride ( rbn ) as the first, rbn turning into cbn as the second and deposition as the last

    基於對bn薄膜相結構的分析和優化的沉積條件，制備出立方相含量高達95 %的cbn薄膜。為了改善制備的可重復性和粘附性，提出了三步沉積方法，即將成核過程分成tbn轉化為rbn和rbn轉化成cbn的兩步，加上之後的沉積過程。
  14. A new type thick - film circuit heatin g - element is introduced and the main technology is expounded, including the requireme nt and performance of substrate mate rial and electro - pastes. the process of heating - element is intro duced too. at last, the application a nd problem of the new type heating - element are put forward

    介紹了基於不銹鋼基板的大功率密度厚膜電熱元件的研究現狀，並對厚膜電路式電熱元件的關鍵技術進行闡述，包括大功率密度電熱元件所用基板材料和基於基板的電子漿料的使用要求，以及電熱元件的制備工藝;最後分析了該新型電熱元件的應用前景和所要解決的問題。
  15. Upon comprehensively reviews of the predecessors ? results, using the experience of other countries for reference, and implementing thin film technology, the author have developed the microsensor in this thesis by sputtering metal material on a silex substrate

    本文在綜合評述前人工作成果的基礎上，借鑒國外的製作和研究經驗，利用薄膜技術，在石英基片上濺射銅、鎳和二氧化硅薄膜，形成薄膜熱流計。
  16. 7 ) by using in - situ hydrothermal synthesis and sol - gel complex method a stoichiometry tetragonal perovskite pbti03 ceramic film was successfully prepared on tini substrate

    通過採用原位水熱solgel復合合成法，在tint基體上成功制備了結構較為緻密的pbtio 。
  17. We studied the influence of the interface strain and it shows that the lattice mismatch between substrate and film is the main reason of the above observations. expand strain decreases tm - i with increasing resistivity and compressed strain has the opposite effect. using double exchange model of zener these results can be explained qualitatively

    27歐姆厘米，轉變溫度是78與154開爾文，磁場強度為7t時，磁阻率為習3及巧6 x結合雙交換模型和不同的應力作用，逐一解釋了產生差異的緣由，其中我們也討論了具有）取向的la 。
  18. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  19. C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led

    C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。
  20. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
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