substrate material 中文意思是什麼
substrate material
解釋
襯底材料-
Using material, which composition is basically same to substrates through grinding, and then dipping its slurry on substrate with heating 800 and then sintering at 1400. there was no crack on the surface of coating. distinguish between coating and substrate may use sem, from sem micrographs of cross section of coating, there is gradated pore structure, while pore - forming agent is no good for coating
採用與基體成分相同的原料配製的料漿在經800燒成的素坯上成膜，燒成后發現，添加成孔劑的料漿成膜后表面易於開裂，而未加成孔劑的料漿成膜效果較好。 -
It set up the development of the world recognized high performance nanofiltration composite membrane of aromatic polyamide, on the basis of reviewing the development, the importance in the membrane separation technology, the classification, the fabrication technique and the current development of the research and the application of the nanofiltration membrane. polysulfone was chosen as the material for making the porous substrate because of its excellent compress - to - denseness resistance, its cheap price and its great availability. by fabricating an ultra thin polyamide functional layer on the polysulfone substrate through interfacial polymerization taking piperazine as the monomer in aqueous phase and trimesoyl chloride as the monomer in organic phase, high performance nanofiltration composite membranes of ultra low pressure and ultra high permeating flux were prepared
選擇耐壓密性能優良，價廉易得的聚碸材料為制備復合膜基膜材料，哌嗪為水相單體，均苯三甲酰氯為有機相單體，通過界面聚合反應在基膜表面形成超薄功能層，制備了超低壓高通量聚哌嗪均苯三甲酰胺聚碸納濾復合膜，以0 . 1 mgso _ 4溶液為測試液，所得高脫鹽平板復合膜（ ）在0 . 4mpa下，脫鹽率為96 . 1 ，通量達85 . 2l -
A planar film of refractive index nf is sandwiched between a substrate and a cover material.
折射率為nf的平面薄膜夾在感光襯底和覆蓋層之間。 -
A construction putty powder for exterior is an auxiliary material of a coat in the course of decoration. its major function is make walls smooth as a substrate treating material
建築外墻膩子是建築塗料外墻裝飾過程中的配套材料，作為一種基層處理材料，它的作用主要是找平墻體。 -
Upon comprehensively reviews of the predecessors ? results, using the experience of other countries for reference, and implementing thin film technology, the author have developed the microsensor in this thesis by sputtering metal material on a silex substrate
本文在綜合評述前人工作成果的基礎上，借鑒國外的製作和研究經驗，利用薄膜技術，在石英基片上濺射銅、鎳和二氧化硅薄膜，形成薄膜熱流計。 -
The strength and wear resistance of diamond drill bits for petroleum exploitation will be increased considerably when cast tungsten carbide is applied and adheres to the substrate firmly with cast tungsten carbide of 80 - 200mesh as the skelton and copper alloy as the soldering material in a process of non - pressure immersion
石油鉆探行業用的金剛石鉆頭，用粒度為80 ? 200目的鑄造碳化鎢粉作骨架，採用無壓浸漬工藝，以銅合金作釬焊料，將鑄造碳化鎢與基體牢固結合，強度、耐磨性大大提高。 -
Abstract : the character of electrode material is an important factor affecting and limiting the structure and property of batteries. thereby, the main types and their features, fundamental properties, and preparation methods of the porous substrate materials for battery electrodes was simply introduced, so as to supply the clues for improving the technologies of producing these materials, and to strengthen the necessity of studying their properties and the property relationships
文摘:簡要介紹了電池用多孔金屬電極基體材料的主要類型及其特點、基本性能要求和制備方法，旨在提供改善該材料制備工藝的線索和強化其性能及性能關系研究的必要。 -
Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention
Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。 -
Based on the principle of material balance in the reactor and the second pond, the equations of the sludge age with microbial growth rate and with the substrate removal rate are deduced in the paper
文中根據曝氣池和二沉池的物料衡算原理，推導出了泥齡與微生物增殖率、基質去除率的關系方程式。 -
Aerospace series. lubricating dry fluorocarbonated without binding material or filler, maximum thickness of 10 micrometer on metallic substrate. quality of coated parts
航空航天系列.金屬基體表面最大厚度10千分尺的不帶有粘結材料或填料的乾式氟碳潤滑劑.被塗零件的質量 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth
文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響 -
Xps of the films indicates that tisi2 interlayer can prevent the interaction between substrate material and diamond interface, so that the adhesion of diamond film is improved
薄膜的xps表明tisi _ 2作為中間層能起到阻止襯底材料與金剛石的界面反應作用，提高了金剛石薄膜的附著性。 -
Because linbo _ 3 material have the characteristics such as good electro - optic, short electro - optic time response and high transnissivity, it is suitable substrate material used as manufacturing low loss waveguid device and has broad application prospects
由於linbo _ 3材料具有良好的電光效應、較短的電光響應時間和高透射率特性，因而適宜製作低損耗導波器件的襯底材料，應用前景廣闊。 -
As well, the compress stress existed in ( 002 ) crystal plane are found and can be explained by the matching between film material and substrate material as well as the different thermal expand coefficient between them
同時， zno薄膜（ 002 ）方向上存在著內應力，內應力是由膜材料與基底材料之間的晶格失配和不同熱擴散系數造成的，退火可可使內應力的到不同程度的釋放。 -
Has been recognized as an ideal substrate material for the rf surface acoustic wave ( saw ) filter, a key component within wireless communication devices as mobile phones. its stability and size make it the preferred option among other piezoelectric materials
為適用於高頻表面聲波濾波器（ rfsawfilter ）小型化的理想基材，由於具備適中的機電耦合系數且溫度系數低，已被廣泛應用在移動式高頻無線通訊器材，尤其是手機里的關鍵材料。 -
Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。 -
When the reliability is 99 %, the fatigue life of laser cladding specimens is about 27 % than that of substrate material specimens
其主要影響因素有，熔覆層底部的枝晶、重熔區內的缺陷和熔覆層內的拉應力。 -
Recently, a significant amount of attention has been directed toward the affinity between dyestuff and printing substrate material in ink - jet printing, the features of reactive dyes can meet this special requirement
噴墨列印中越來越重視染料對列印材料的親和力，活性染料在此有獨特的作用。 -
The experiments on substrate material and laser cladding specimens fur comparing the fatigue life were carried out, and the factors affecting fatigue properties of the laser cladding layer on the surface of aluminum alloy were investigated
摘要對鋁合金試樣表面進行激射光熔覆處理，分析激光熔覆層的顯微組織，並對熔覆試樣和基材試樣進行疲勞壽命對比實驗。
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