sulfidation 中文意思是什麼

sulfidation 解釋
硫化作用
  1. The effects of the sulfidation parameters on the microstructure and photoelectrical characteristics of fes _ 2 thin films have been investigated by the sulfidation annealing for the fe films under different temperature, time and pressure

    本文採用不同的硫化溫度、時間和壓力對相同厚度的fe膜進行硫化處理來研究硫化參數對薄膜組織和光電性能的影響。
  2. Higher sulfidation temperatures can results in coarser fes2 grains, higher electrical resistivity and higher possibility to produce p - type thin films

    硫化溫度越高, fes2晶粒尺寸越大,薄膜電阻率越高,並趨于p型導電。
  3. The influence of sulfidation pressure on microstructure is insignificant. the electrical resistivity is lower because the carrier concentration is very higher for the films annealed at lookpa sulfidation pressure

    硫化壓力的變化對薄膜的組織結構影響不明顯,當硫化壓力為100kpa時,薄膜具有較高的載流子濃度及較低的薄膜電阻率。
  4. Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation. the influence of the thickness on the crystal structure, electrical resistivity, carrier concentration, absorption coefficient and energy gap of fes2 thin films have been investigated

    採用硫化不同厚度的fe膜制備了不同厚度的fes2薄膜的方法,研究了不同厚度fes2薄膜的晶體結構、電阻率、載流子濃度、光吸收系數以及禁帶寬度。
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