superconducting thin film 中文意思是什麼

superconducting thin film 解釋
超導薄膜
  • superconducting : 超導電的
  • thin : adj （thinner; thinnest）1 薄的 （opp thick）; 瘦的 （opp fat stout）; 細小的；【印刷】細體的。2 ...
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique

    =本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。
  2. The dielectric constant of srtio3 ( sto ) thin films is voltage - dependent near the curie temperature tc ( about 40k ). and no dispersion in is observed in sto at frequencies up to 10 ghz. yba2cu3o7 - x ( ybco ) high temperature superconducting thin film has very low microwave surface resistance

    Srtio3 （ sto ）薄膜在其居里溫度附近（ ~ 40k ）具有介電常數隨電場強度變化而變化的性質，同時sto在10ghz以下介電常數沒有頻率色散性。
  3. The dc electric resistance test method for the critical temperature tc of a yba2cu3o7 - superconducting thin film

    釔鋇銅氧123相超導薄膜臨界溫度tc的直流電阻試驗方法
  4. Superconducting mgb2 thin films were fabricated on single - crystal sapphire substrate by hfcvd and hpcvd, respectively. the experiments were carried out both in situ and ex situ. in situ method refers to acquiring mgb2 thin films directly during the deposition process. ex situ method is defined as obtaining mgb2 thin films indirectly by post - annealing of precursor b film in high mg vapor pressure at high temperatures

    實驗分原位法和非原位法兩種工藝，原位法是在薄膜沉積過程中直接生成了mgb2超導薄膜；非原位法是先在基片上沉積前驅物b膜，然後將b膜在mg蒸氣中高溫退火得到mgb2超導薄膜。
  5. The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure

    實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。
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