surface states 中文意思是什麼

In loessal regions and alluvial valley fills of the western united states, both surface soil and subsoil are commonly friable.

在美國西部黃土區和沖積河谷里，表土和底土一般是容易破碎的。

Volcanic activity has been responsible for large chunks of surface morphology in the western states, alaska, and hawaii.

火山活動是形成美國西部各州，阿拉斯加州和夏威夷州大片地形的主要原因。

Preparation and study of the surface states on nano particle photocatalyst films

納米薄膜光催化劑的制備與表面態研究

In this paper, the finite - element numerical analysis calculation is applied to the foundation of high - rise and multi - floor building and the evolvement law of stress and displacement of tunnel used by urban traffic to explore the mutual influence between the wall rock of underground space and high - rise building foundation, taking account of the specific construction situation in the " sanmu garden " project in dadukou district in chongqing, from the perspective of underground space static - force structure stability analysis to open a underground tunnel with 6m in span and 7. 5m in height for track traffic 20m below the surface. this paper, taking considerations of three different states, i. e. the natural state without any artificial interference, the state of high - rise buildings on the surface, and the underground tunnel state with excavation for track traffic, and four plane lines and four vertical lines, analyzes and studies the distributing law of stress and displacement of calculation section from the following aspects : ( 1 ) the main stress vectorgraph, displacement distribution graph ( ux, uy ) and chromatogram graph of stress isoline ( 1, 2, xy ) of section under different states ; ( 2 ) the contrastive distribution curve of stress ( 1, 2, xy ) of different plane and vertical lines under the same state ; ( 3 ) the contrastive distribution curve of stress ( 1, 2, xy ) of the same plane and vertical lines under different states, wishing to provide references for underground space utilization and project designing and construction of the tunnel under high - rise buildings in the future

本文結合重慶市大渡口區「三木花園」開發建設項目，從地下空間靜力結構穩定性分析角度出發，針對在該項目中涉及的高層和多層建築物以及在其地下20米處開挖了一個用於軌道交通的跨度6米，高7 . 5米的地下隧道這一具體工程情況，採用2d - 3d -有限元結構分析程序對高層與多層建築物的地基基礎及其與城市軌道交通使用的地下隧道圍巖的應力與位移演變規律進行了有限元數值分析計算，探索了地下空間圍巖與高層或多層建築物地基基礎之間的相互影響，通過考慮未受到任何人為擾動影響的天然狀態、地表存在多層或高層建築物狀態和地下開挖用於軌道交通的地下隧道狀態等三種不同狀態以及4個水平剖線和4個垂直剖線等不同情況，從以下幾個方面具體分析研究了計算斷面的應力與位移分佈規律： （ 1 ）在各種不同狀態下計算斷面的主應力矢量圖、位移分布圖（ ux 、 uy ）以及應力等值線色譜圖（ _ 1 、 _ 2 、 _ （ xy ） ）等； （ 2 ）相同狀態下不同水平與垂直剖線的應力_ 1 、 _ 2和_ （ xy ）對比分佈曲線； （ 3 ）不同狀態下相同水平或垂直剖線的應力_ 1 、 _ 2和_ （ xy ）的對比分佈曲線等，為今後在對地下空間的開發利用以及在高層建築物地下開挖硐室時的工程設計和工程施工提供參考依據。

Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ). the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering, and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering

用x射線光電子能譜技術（ xps ）和角分辨x射線光電子能譜技術（ arxps ）研究了薄膜的表面化學態以及最頂層原子種類和分佈狀況，結果顯示在熱處理過程中薄膜表面形成一層富含bao的非計量鈦氧化物層，並且鋇-鈦原子濃度比隨著探測深度的增大而逐漸減小。

This should be an incentive to apply the rrpa method with non - linear effective lagrangians to study other systems such as unstable nuclei near drip lines. for nuclei with the extreme value of n / z, low - lying collective excitations are found in isovector dipole modes, which are mainly due to the particle - hole excitation of weakly bound states near fermi surface and the isospin mixture effect

將相對論無規位相近似理論推廣應用到奇特核集體激發態的研究，發現對于奇特核的同位旋矢量激發模式在很低能量下會出現軟模式的巨偶極共振，這主要是由於費米面附近粒子-空穴激發所形成的。

In each case, we present the surface band structure together with the projected bulk band of both ideal and reconstruction surface respectively, the number of the surface states is determined, and the localized surface features and orbital properties of this surface states along the high symmetry lines in the 2d sbz are discussed

根據電子數目規則，我們斷定處在一o . lev ~ 0 . lev的表面態為全部填滿的陰離子懸掛鍵態或者為原子再構后引起的as一asdimer鍵態，而處在1 . 4ev一1 . 6ev的表面態為陽離子空的懸掛鍵態。

Some results are interesting, for example, in our calculation, there are no reconstruction in the cleaned pbte > pbse > pbs ( 001 ) surface. but there are different rumple occurs. unlike the iii - v and ii - vi semiconductors, there are no surface states in the fundamental gaps

在表面電子結構特徵方面，與111一v族和n一vl族化合物不同，基本帶隙中不引入表面態，而在導帶頂和價帶底附近以及更深能級中出現表面態或表面共振態等。

Under pulse condition, charging and discharging of surface states between gate and drain induce gan hemt current collapse

脈沖條件下， ganhemt電流崩塌效應主要由柵漏之間表面態充放電引起。

In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。

In this thesis, three systems, namely, perfect and defect sno _ 2 ( 110 ) surfaces, ti and ru - doped surfaces and the adsorptions of small molecules on above perfect surfaces have been studied in details by using the first - principles method with the combination of pseudopotential plane - wave and atomic basis sets. the structural stability, surface states and the surface chemistry of undoped and metal doped sno _ 2 ( 110 ) surfaces have been discussed, which can provide the theoretical rules to improve the surface properties of this special functional material

為了深入了解sno _ 2表面的電子結構本質及其化學反應性質，本論文採用贗勢平面波和原子軌道基組相結合的第一性原理方法，詳細考察了三種類型體系，即sno _ 2 （ 110 ）完整和缺陷表面、 ti和ru摻雜表面、以及典型小分子在上述完整表面的吸附，揭示了sno _ 2 （ 110 ）及其金屬摻雜表面的構型穩定性、表面態及其對表面化學反應性的影響，為該類型表面功能材料的改性提供理論依據。

The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。

A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built, using steady - state continuity equations and including the effect of surface states

通過求解一維電流連續性方程和傳輸方程，同時考慮表面態陷阱的作用，建立了gan基msm結構紫外探測器在穩態光照下i - v關系的解析模型。

In comparison with the apups, the results have shown that the surface states of the hollow site are in good agreement with the experiment. so we concluded that the hollow site model is favourable for the gaas ( 113 ) ( l xi ) surface and the bridge site model should be e xcluded. 3

3 .其他工作除此之外，論文還對鉛鹽pbte 、 pbse 、 pbs （ 001 ）表面電子結構， ybco超導體表面氧特性、金屬ti和ni在金剛石表面的吸附和擴散等特性進行了研究。

The photolumescence ( pl ) spectrum of modified si nanoparticles was changed since the protective agent had modified the surface states, thus altering the light emission characteristics

奈米矽粉的光激發光光譜因保護劑之包覆，改變其發光機制而改變光譜峰。

Further investigations show that new surface states are derived by the doping, which may lead to the changes of the surface properties of sno _ 2 ( 110 ). it seems that the type of doping atom has great effects on the positions of doping states

值得注意的是， ti摻雜對co吸附影響較小，而摻雜ru原子可顯著增強表面對co的吸附，尤其是五配位sn原子被ru取代后，具有最大的吸附能。

Fast surface states

快界面態

Passivation on the surface of nanocrystalline zno was responsible for an energy potential high enough to prevent surface states trapping the electrons or holes photogenerated, it should block the pathway to form the luminescence centers as the vo * * and [ vo *, electron ] or [ vo * *, two electrons ] complex. a new visible luminescence mechanism was presented

納米氧化鋅（ zno ）表面的鈍化實際上是在氧化鋅（ zno ）的核和表面之間形成了大的勢壘阻止表面缺陷捕獲光生電子或光生空穴形成發光中心vo * *和[ vo * ， electron ]或[ vo * * ， twoelectrons ]復合體，同時，提出了一種新的可見發光機制，很好地解釋了實驗中觀察到的現象。

Surface states of superconductors, t. d. kung, x. x. yao, c. h. tsai, z. r. yang, chinese phys. 1 ( 1981 ) 1051

正常導體-超導體的界面電子態，楊展如，龔昌德，蔡建華，低溫物理， 2 （ 1980 ） 81

The chelation ability made ac - hac act as a protection layer on the surface of cds nanoparticles, which reduced surface states and improved the band edge emission. 3

這是因為聚丙烯酸?丙烯酸羥丙酯在一定程度上能夠修飾cds納米粒子表面，減少表面缺陷，提高納米粒子的帶隙發光。