surface substrate 中文意思是什麼

surface substrate 解釋
表面基層
  • surface : n 1 表面;地面;水面;廣場,空地。2 外觀,外表,皮毛。3 【幾】面;切口;【航空】翼面。adj 表面的...
  • substrate : n. 1. 底層,地層。2. 【無線電】(半導體工藝中的)襯底,基底。3. 【生物學】(生態學中的)基層;【生物化學】受質;被酶作用物。
  1. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理,解決硅襯底表面的氧化層和界面電荷平衡問題,制備出了高質量的氧化鋅薄膜材料,找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  2. Using material, which composition is basically same to substrates through grinding, and then dipping its slurry on substrate with heating 800 and then sintering at 1400. there was no crack on the surface of coating. distinguish between coating and substrate may use sem, from sem micrographs of cross section of coating, there is gradated pore structure, while pore - forming agent is no good for coating

    採用與基體成分相同的原料配製的料漿在經800燒成的素坯上成膜,燒成后發現,添加成孔劑的料漿成膜后表面易於開裂,而未加成孔劑的料漿成膜效果較好。
  3. It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic

    結果表明,對于ito薄膜,薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系, ito薄膜的sem表明,樣品表面較平整,且晶粒也比較緻密。
  4. Components, structure and surface morphology of the resulted films were identified by fourier transform infrared ( ftir ) spectroscopy, x - ray diffraction ( xrd ) and scanning electronic microscopy ( sem ). the analyses showed the content of cubic boron nitride in the resultant films on substrates was rather high and crystal particles of c - bn with uniform size, smooth crystal plane and regular shapes ( quadrangle and hexagon ) densely arrayed on the substrate

    傅里葉轉換紅外吸收( ftir )光譜儀、 x射線衍射( xrd )儀和掃描電鏡( stm )的測量結果顯示,基底上的bn膜中立方相含量很高,且晶粒大小均勻、排列緻密,晶形呈規則的四角和六角形。
  5. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝,側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響,研究結果表明:隨著碳化時間的增長,碳化層的晶粒尺寸隨之變大,表面粗糙度隨之降低,但當碳化到一定時間之後,碳化反應減緩,碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大,適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時,碳化層的晶粒尺寸隨氣體流量的變化不明顯,但當氣體流量增大到一定程度時,碳化層的晶粒尺寸隨氣體流量的增大而明顯變大,同時,適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時,碳化層的晶粒取向不明顯,隨著碳化溫度的升高,碳化層的晶粒尺寸明顯變大,且有微弱的單晶取向出現,但取向較差,同時,適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ,以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si ( 100 ) ,選用si ( 111 )作為基片生長的碳化層的晶粒取向一致性明顯更好。
  6. In this paper, the preliminary method, principle and test equipment of laser cleaning are mainly introduced, and high cleanness surface is obtained by means of laser cleaning the contaminated particles on optical substrate surface

    介紹了光學基片表面軟質拋光膠體粒子激光清洗的基本方法、原理和實驗裝置,並通過對含有污染微粒的基片表面進行激光清洗,獲得了高潔凈表面的光學基片
  7. Therefore, cleaning of micron and submicron contaminate particles has become an important procedure in the process of glass substrate with super - smooth optical surface, and also become one of the key solving technology to ensure the quality of substrate

    表面清洗是光學基片製造中必不可少的工序之一,隨著表面污染微粒的容限提高到微米甚至亞微米級,傳統的清洗技術難以滿足要求,已經成為制約基片性能提高的主要技術難題之一。
  8. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外,本文通過反射式高能電子衍射( rheed )監測了gasb外延薄膜的生長,利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態,溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析,並與模擬結果進行比較。
  9. All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate

    本文用射頻反應磁控濺射制備了高度c軸擇優取向的zno薄膜,採用原子力顯微鏡( afm ) 、 x射線( xrd ) 、 hall測試儀、紫外?可見分光光度計和x光電子能譜等分析測試手段,研究了樣品的表面形貌、晶體結構、光學和電學性能等。
  10. For the preparation of coated conductors, one of the most important issues is the growth of seed layer ( the first buffer layer ), which provide a continuous, smooth, and chemically inert surface for the growth of the ybco film while transferring the biaxial texture from the substrate to the htsc layer

    在二代塗層導體中,第一層過渡層(也稱為種子層)起著順延織構和阻擋基帶與超導層之間互擴散的重要作用,因此,種子層是塗層導體制備的關鍵。
  11. To utilize property of saws propagating, it can be made including delay lines, passband filters, oscillators and pitch filters. surface transverse wave ( stw ) was used the configurature of reflective metal - strip grating between the two interdigital transducers, and made the shear horizotal ( sh ) wave on the surface of the piezoelectric substrate, but not to deep in

    聲表面橫波( surfacetransversewave ,簡稱stw )是採用在兩個金屬叉指換能器之間加入短路柵的隔離板結構使剪切水平波( shearhorizontalwave ,簡稱sh波)被嵌制在壓電基片表面上,而不是沿壓電基片內傳播的聲表面橫波形式。
  12. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡( afm )方法觀察薄膜的顯微結構,利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論,認為400的襯底溫度對硅襯底薄膜是合適的,與結構分析的結果一致。通過對薄膜磁性能的分析和研究,我們得出一些有意義的結果:適量過渡金屬離子fe 、 co摻雜的zno薄膜,在室溫下具有鐵磁性,而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值,而且結構最好的薄膜磁性不一定最好。
  13. The results show that, composite could be fabricated on the complicated surface by means of sodium silicate sand mold combination with vacuum infiltration process. when the substrate was 10 mm, composite layers reached 3 mm to 5 mm in thickness with high strength interface and less casting defect. microstructures of grey cast iron and low chromium cast iron matrix composites with various volume fraction has been analyzed

    結果表明:用水玻璃砂型(芯)加負壓鑄滲的工藝能夠實現復雜表面(曲面)顆粒增強復合材料的制備,澆注方式簡單可靠,基材厚度在10mm時,復合層厚度能達到3 5mm ,且復合層鑄造缺陷少,復合效果好,界面緻密而且結合強度高。
  14. 1. 2. bakelite substrate : vibration absorption, a reduction of wheel abrasion and the improvement of surface roughness

    1 .電木基材:吸震作用減少砂輪磨耗改善表面粗度。
  15. A patch antenna with air holes in the substrate has been designed. the finite - difference time - domain ( fdtd ) method together with the perfectly matched layer ( pml ) boundary treatment has been used to study the performance of the antenna. it is shown that the surface waves are significiently suppressed, the frequency bandwidth is improved, the sidelobe levels are reduced and consequently the gain in the forward direction is improved by 14 db ( about 4 db higher than the value reported previously )

    設計了一種基底鉆周期圓孔結構的電磁(光子)晶體貼片天線,用fdtd方法並結合pml吸收邊界條件對該天線進行了研究,結果表明本文所設計的基底鉆孔型電磁晶體貼片天線取得了多方面的性能改善,與普通天線相比,基底中的表面波受到很大抑制,天線的帶寬增加,遠場方向圖上天線的旁瓣和背瓣被明顯削弱,向前輻射的增益由原來的12db增加到26db ,增加了14db ,比文獻上報道的gonzalo等人的研究結果提高了4db 。
  16. Poles - etching method is that the etching current caused by the external voltage is used to promote the intermediate ion product break away from the surface of substrate and keep the etching rate stable

    電極腐蝕法是指在激光腐蝕的過程中,通過外加電壓在溶液中形成腐蝕電流,促使中間離子產物脫離基片表面,使腐蝕持續穩定進行。
  17. For example, when the gaas substrate is etched by h2so4 - h2o2, h2o2 is adopted to oxidate the substrate first, then the substrate was etched by means of laser wet etching in h2so4 solvent. theoretical analysis and experimental results show that compared with the mixed - solvent - etching, more smooth etched surface can be obtained by this method ; and because the substrate is preprocessed, time of laser induced wet - chemical etching

    理論分析和實驗結果都表明,次序選擇腐蝕法可以有效地提高腐蝕表面的均勻性;因先對基片進行化學腐蝕處理,大大縮短了激光化學腐蝕的時間;使溶劑先後分別作用於基片,可以提高激光化學腐蝕溶劑配比的精度容差,使激光化學腐蝕控制和分析更加簡單。
  18. "pattern transfer" refers to the transfer of a pattern, defined by a masking layer, into a film or substrate by chemical or physical methods that produce surface relief.

    「圖形轉移」是指把掩膜層所確定的圖形通過能產生表面轉移的化學或物理方法轉移到薄膜上或襯底上去。
  19. About effect of plasma flow guiding, the 90 - inclined cnts was successfully modified to 45 - inclined cnts by positioning a negatively - biased metal plate above the si substrate surface to vary the plasma flow pattern

    關于電漿導流板之效應,藉由通在基材上放置具有負偏壓之導流板可以控制電漿之流向,使原本與基材夾90 ?角成長之碳奈米管可藉此令其與基材夾45 ?角成長。
  20. ( 2 ) the distribution, flux and flowrate of the gases are exactly under control. in order to grow high - quality diamond film on si substrate, the quality of diamond film on a mirror - polished single - crystal si surface is examined experimentally, and the enhancement mechanisms of positive or negative bias on nuclear formation is interpreted theoretically

    為了在si襯底上生長高質量的金剛石薄膜,對在鏡面拋光si表面上的成核進行了深入的實驗研究,對襯底偏壓(正、負)的增強成核作用給出了自己的解釋。
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