tcr 中文意思是什麼

tcr 解釋
t淋巴細胞受體
  1. This study was undertaken to investigate the anti - tumor immuneologic effects induced by tcr idiotypic dna vaccine on balb / c mice

    本文觀察tcr獨特型dna疫苗誘導balb c小鼠抗腫瘤免疫反應的情況。
  2. Dendritic cells ( dc ) is the most powerful apc, which can markedly increase the antigen - presentation capacity by maximizing the pepitide - mhc complexes on the cell surface and upregulating the co - stimulatory ligands b7 - 1 and b7 - 2, adhesion moleculees such as il - 12 that promote full activation of lymphocytes. full activation of antigen - specific t cells requires two signals - one signal coming via the tcr and the other signal through engagment of co - stimulatary molecules. t cells receiving one signal via their tcr are turned off by mhc ( major histocompatibility complex ), via t cell cd28 binding to b7 on the dc induce tlymphokine and t cell proliferatiion

    T細胞介導的細胞免疫在控制腫瘤生長方面發揮著重要作用， t細胞在發揮抗瘤效應（分泌細胞因子和直接殺傷）之前必須先經過活化，體內專職抗原提呈細胞（ apc ）細胞並使其活化，樹突狀細胞（ dendriticcell ， dc ）為t細胞的激活提供雙重信號， t細胞藉助tcr識別由dcmhc分子遞交的抗原肽后，通過tcr - cd3復合體傳遞抗原特異性識別信號（第一信號） ，以cd28為主的t細胞表面輔佐分子識別dc表面b7分子，傳遞非特異性協同刺激信號（第二信號） ，在機體抗腫瘤免疫應答中處于核心地位。
  3. The target determines the precision, reliability, stability and tcr of the resistor. on the other hand, the coatings play an important role in improving the heat - resistance and moisture - resistance of the resistor. however, nowadays the study in this field is some deficient in our country

    此外，金屬膜電阻器的耐熱、耐濕、耐腐蝕性能還直接與金屬膜電阻器表面的保護塗料的性能密切相關，而目前國產的塗料在耐高溫、耐高濕方面還達不到國家軍標的要求。
  4. The average partical size of bismuth ruthenate and pbo - b _ 2o _ 3 - sio _ 2 glass was researched. the smaller bismuth ruthenate partical is, sheet resistivity is lower and temperature coefficient of resistance ( tcr ) is more positive and the refiring change ratio is nearer to zero. the limit size of bismuth ruthenate partical is 0. 56 m

    研究了各相粉體平均粒徑對膜層性能的影響，結果表明:釕酸鉍平均粒徑越小，膜層的方阻值越小，電阻溫度系數偏正，重燒變化率越接近零值，球磨工藝的極限平均粒徑為0 . 56 m 。
  5. The tcr of the as - deposited films were about 20x10 - 6 /

    由優化的濺射工藝參數原位沉積的錳銅薄膜的tcr 。
  6. The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %

    以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。
  7. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  8. This modeling method is applicable to most of facts and hvdc devices, not only to those devices including thyristor - controlled reactor ( tcr ), such as thyristor - controlled series capacitor ( tcsc ) and static var compensator ( svc ), but also to those devices including converter bridge, such as hvdc device and static synchronous compenstor ( statcom ), etc. it deduces the mathematical models of tcsc, hvdc, svc and statcom devices with the proposed method

    該方法能適用於大多數facts裝置和hvdc裝置，不僅可用於含有晶閘管可控電抗器（ tcr ）元件的裝置如可控串聯電容補償（ tcsc ） 、靜止無功補償器（ svc ）等的建模，也可用於含換流橋的裝置如hvdc裝置、靜止同步補償器（ statcom ）等的建模。本論文採用動態相量法建立了tcsc 、 svc 、 hvdc及statcom裝置的數學模型。
  9. Tcr idiotypic dna vaccine may generate anti - idiotypic immunity against the tumor

    應用tcr獨特型dna疫苗有可能激發抗腫瘤獨特型免疫反應。
  10. Methods : the rearranged gene fragment coding tcr y v region of the jurkat cell line was obtained by rt - pcr technique the pcr product was cloned into the eukaryocytic expressive vector pcdnas to construct pcdna3 / tcr y. after confirmed by sequncing. pcdnas / tcr y plasmids were amplified in bacteria extracted by alkaline lysismethod

    方法：本文採用rt ? ? pcr的方法擴增jurkatt淋巴瘤細胞特異性重排的tcr可變區基因片段，克隆到真表達載體pcdna _ 3中，經序列測定無誤后，堿裂解法大量提取質粒，制備dna疫苗。
  11. Effective activation of antigen - specific t cells not only requires the first signal transduction through t - cell receptor ( tcr ) binding with peptide - mhc complex on the antigen presenting cell ( apc ), but also needs the second signal, termed costimulation. costimulation critical to the degree and consequence of t cell activation is provided by interaction between soluble factors or cell - surface molecules on the t cell and on the apc

    而t細胞的活化除需要t細胞受體（ tcr ）與抗原呈遞細胞（ antigenpresentingcell ， apc ）表面的抗原肽- mhc復合物結合所形成的第一信號外，還需要t細胞和apc表面的其它膜分子結合所提供的共刺激信號（亦稱第二信號或輔助刺激信號， costimulatorysignal ）的參與。
  12. Finally the model of mhc - sed - tcr was constructed to make us obtain a better understanding about immune recognition of sed. in conclusion, our results first indicate that n23 and h26 on sed are the important residues involved sed interacting with tcrv 3 and the

    綜上，本研究首次對sed與tcr結合的位點進行研究，發現n23和h26位氨基酸殘基是tcr識別的關鍵位點；進一步證
  13. To limit the footprint on the adjoining country parks and minimise the impacts on ecologically sensitive streams, we will construct elevated structures and retaining walls along the tcr

    為減少佔用毗鄰郊野公園的地方，以及盡量避免對生態易受破壞的河流造成影響，工程會採用高架構築物形式築建部分路段，
  14. Objective : in most t eel ] malignancies, there are t cell receptors ( tcr ) expressed on the surface of the tumor cells

    目的：大多數t細胞腫瘤表面有tcr獨特型抗原，可作為腫瘤特異性抗原用於免疫治療。
  15. On site survey of existing tcr conditions

    于現有東涌道進行實地勘測
  16. The expressive gene fragment was 333bp long. analyses of the tcr y fragment shpwed that it contained three epitopes. it was showed that specific anti - idiotypic antibody could be found since four weeks after the first immunization and came to the climate on the sixth week. the antibody titers of the same time were higher in group pcdna3 / tcr y - il - 2 than in group pcdna3 / tcr y ( po. 01 ). the highest antibody titer was 1 : 640 in the group pcdna3 / tcr y - il - 2, whereas the highest was 1 : 160 in the group pcdna3 / tcr y. there were mrna expression in skeletal muscle cell could be found in group pcdnas / tcr y and group pcdna3 / tcr y - il - 2 on fifth day after inoculation

    用tcryvi獨特型dna重組載體作為疫苗免疫小鼠，結果表明pcdna3汀cry組及pcdna3廳cry ? il ? 2組小鼠1血肩中全部產生了特異性抗獨特ffo抗體，抗體滴度在第4周開始增高，第6周時達到高峰。在同一取血時間， w兒1 ry一幾一二組小鼠抗體滴度均高於pcdna3 tcry組（ p 0 1 ） 。 pcd a3 tcry組小鼠抗體滴度最高達1 ： 16小pc 。
  17. Transcription - coupled repair, tcr

    轉錄合併修復
  18. Square resistance of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear increased and tcr of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear decreased with increase of content of ag. the electric conduction model of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was formed. bapb _ ( 1 - x ) bi _ xo _ 3 based thick film is actually conductive with lead and bismuth oxide, the main factors on the properties of thick film is the electric resistance and contact resistance of conductive particulates ; the electric conduction model of ag - bapb _ ( 1 - x ) bi _ xo _ 3 based thick film : the general structure of conductive network is constructed by conductance chain of ag and is submerged into bapb _ ( 1 - x ) bi _ xo _ 3 based conductive ceram

    本文認為: bapb _ （ 1 - x ） bi _ xo _ 3厚膜電阻是一種摻有鉛、鉍氧化物的導電陶瓷燒結體，影響厚膜電阻導電性能的主要因素是導電顆粒自身電阻與顆粒間接觸電阻;厚膜電阻摻銀后的導電微觀結構是由許多微小串聯或並聯的ag顆粒組成的導電鏈構成的結構復雜的多維導電網路，此導電網路被「淹沒」在bapb _ （ 1 - x ） bi _ xo _ 3導電燒結體中。
  19. The paper states the configuration, theory of operation and control, realization as well. with the static svc ( tcr ) in operation at the plant, a way similar to rolling mill cycloconverter supply system can be worked out to mitigate harmonic and compensate reactive power

    通過本文的工作以及關于重鋼中板廠tcr靜止型動態無功補償裝置的研究，可探索出一條類似交-交變頻供電類軋機負荷供配電系統諧波綜合治理和無功補償的路子。
  20. 5. manganin thin films with low temperature coefficient of resistance were prepared by magnetron sputtering. the changes of tcr under difference deposition and heat treatment conditions were studied

    首次採用磁控濺射法沉積了低電阻溫度系數的錳銅薄膜，研究了在不同電子科技大學博士學位論文沉積及熱處理條件下薄膜tcr的變化。
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