temperature buffer 中文意思是什麼

temperature buffer 解釋
溫度緩沖器
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • buffer : n 1 【機械工程】緩沖器，緩沖墊；阻尼器，減震器；消聲器。2 【化學】緩沖，緩沖劑。3 緩沖者；緩沖物...
  1. As the kid chymosin was extracted by the traditional way and the buffering way at different ph values, its activity mainly depended on the salt concentration, extraction time and temperature, the ratio of buffer and abomasums and extraction times

    用傳統方法和不同ph緩沖液方法提取羔羊凝乳酶時，食鹽濃度、提取時間、提取溫度、提取液與皺胃比例、提取次數對凝乳活性有重要的影響。
  2. The results indicated that the synthetic mviia was reduced and oxidized in a buffer containing acetamide / guanidine hydrochloride by air oxidization in the room temperature and obtained a relatively well oxidization result, the synthetic mviia showed 100 % of physiological activity of native mviia, but obtained 1 % product of synthetic crude peptide

    結果表明，合成的mviia在乙酸胺/鹽酸胍緩沖體系，室溫下採用空氣氧化法時獲得了較好的復性結果，合成復性的mviia幾乎具有天然mviia的100的生物學活性，但產率只有1左右。
  3. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  4. Concludes that the undesired effect of temperature difference could not be eliminated just by the negative pressure difference between adjacent rooms, that the contaminant air exchange would increase about 50 % in the temperature difference of 2 than that in the temperature difference of 0, and that such contamination could be reduced to about 1 / 31 ~ 1 / 16 with the help of buffer rooms

    結果顯示，溫差作用是一般壓差作用抵消不了的； 2溫差時污染物交換量比0溫差時增加50 %左右；緩沖室可對溫差作用引起的污染物交換起到15 ~ 30倍的動態隔離作用。
  5. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  6. The isolation and purification of dnaase in the earthworm the earthworm dnaase was purified from the tissue extract of earthworm by denaturing the protein with low ph buffer, high temperature, ammonium sulfate precipitation, deae - cellulose ( de52 ) chromatography and ultra - filter membrane

    雙胸蚓組織中dna酶的分離純化雙胸蚓組織粗提取液經過選擇性酸變性、選擇性熱變性、硫酸按分段鹽析、 deae一纖維素（ de52 ）柱層析、超濾膜分級分離后得到一個電泳純的dna酶。
  7. Based on the previous research, theoretically analyses the influence of combinations of air changes and cooling load in an isolation ward and the adjacent buffer room on isolation effects when the temperature difference is considered

    摘要從理論上分析了考慮溫差影響下，隔離病房和緩沖室的換氣次數與房間冷負荷的匹配情況對兩室一緩工況下隔離效果的影響。
  8. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  9. To isolate and purify dnaase in the earthworm first, the tissue extract of earthworm was prepared by dissolving the earthworm with sucrose and denaturing the protein with low ph buffer. then dnaase was purified by denaturing the protein with higher temperature. the following steps were ammonium sulfate precipitation, deae - cellulose ( de52 ) chromatography and filtration by ultra - filter membrane

    雙胸蚓組織中dna酶的分離純化採用蔗糖溶解雙胸蚓，並選擇性酸變性制備雙胸蚓組織粗提取液，再經選擇性熱變性、硫酸銨分段鹽析、 deae ?纖維素（ de52 ）柱層析及超濾膜分級分離對雙胸蚓組織中dna酶進行分離純化。
  10. The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is

    透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。
  11. In order to deal with large mismatch ( 14. 6 % at room temperature ) between gaas and insb, a insb buffer layer was deposited firstly at low temperature 350, followed by a insb epilayer being deposited at higher temperature 440

    為了克服insb與gaas間14 . 6 %的晶格失配度，實驗設計先低溫生長一定厚度的insb緩沖層，隨后升溫生長insb外延層。
  12. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  13. Western blot analysis we treated 200 fertilized eggs in a series of steps including lysing them in l0ul of lysis buffer ( 50mm tris - hcl ph 7. 5, 250mm nacl, 5mm edta, imm dtt, 0. 1 % triton, 50mm sodium orthovanadate, looug / mg pmsf and tpck, 50ug / ml tlck, 1 ug / ml leupeptin pepstatin and aprotinin ), frozing them below - 70, and then thawing them at room temperature for 10 min

    2 . westem印跡將處理組及對照組小鼠一細胞g2期受精卵各200個取出，轉移到ep - pendoff管中， 5000甲m離心4分鐘，棄去上清，加入ro川粉碎緩沖液，充分振蕩混勻，在液氮中經過2一3次的凍融循環，迫使卵細胞裂解，加人等量的樣品緩沖液沸水中煮5分鐘，用於westem印跡分析。
  14. 2. fabricating uniphase fe _ 3o _ 4 film by dc magnetron sputtering, the influence of sputtering power, annealing temperature is discussed in detail and the optimum fabricating condition is found. 3. the influence of ta buffer introduced to fe _ 3o _ 4 film is investigated in detail

    2 .研究以磁控反應濺射法制備單相成分的fe _ 3o _ 4薄膜時，濺射功率、晶化溫度對薄膜結構的影響，得到磁控反應濺射制備半金屬fe _ 3o _ 4的最優條件。
  15. In the view of hydrolyze coating way, ph value, treating temperature, concentration of premonitory matter solution, buffer solution amount and premonitory matter amount affect the coat layer forming mainly. according to the results of experiments, the best technical condition is that ph = 6. 5, [ al3 + ] = 0. 064mol / l, t = 343k, vbugersoiution = 40ml

    水解包覆工藝改性研究結果表明： ph值，處理溫度，覆層前驅物溶液的濃度、緩沖溶液加入量和覆層前驅物加入量這幾個因素對石墨表面覆層形成存在重要影響。
  16. Morphology of low temperature buffer layers and its influence on inp epilayer growth

    低溫緩沖層的表面形貌及對其外延層生長的影響
  17. ( 3 ) the effects of growth pressure of buffer layer on the growth of buffer layer and gan epitaxy, and the morphological evolution during high temperature growth have been investigated

    （ 3 ）研究緩沖層生長壓力對緩沖層生長、外延層生長及形貌變化的影響。
  18. We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio, growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer, while other parameters like growth pressure, pressure during annealing and ramping rate show little influence

    在大源流量流下，研究了gan緩沖層各生長參數的影響規律，發現對緩沖層生長影響顯著的條件有生長比、生長溫度、退火時的氨氣流量。而緩沖層生長壓力、退火壓力及退火時間的影響相對較小。
  19. Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )

    本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
  20. However, the performance of thermoelectric materials can be optimized if various materials with different properties are arranged along the temperature axis to form a graded or laminated thermoelectric material. in the present work some homogeneous materials such as bi2te3 - and fesi2 - based thermoelectric materials as well as pseudo - binary alloys ( pbte ) 1 - x ( snte ) x ( 0 x 1 ) have been prepared, their thermoelectric properties have been measured, and the possibilities for constitution of laminated structures have been discussed. the processes for preparation of laminated thermoelectric materials and the thermal stress buffer layers sandwiched between thermoelectric material segments have been studied

    本項工作主要包括： 1 ）均質熱電材料bi _ 2te _ 3基、 fesi _ 2基以及膺兩元合金（ pbte ） _ （ 1 - x ） （ snte ） _ x （ 0 x 1 ）的制備與性能研究，適合於製作梯度功能材料的各種均質熱電材料的篩選； 2 ）異種材質及近乎相同材質疊層材料制備工藝的研究以及熱應力緩和層的研究） ； 3 ）採用sem 、 edax 、 empa 、 xps等多種手段，對界面處微觀組織結構、擴散與反應的分析； 4 ）採用數學建模計算及實驗測量，對兩元和多元疊層熱電材料的結構設計以及性能和熱穩定性的研究。
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