thick films 中文意思是什麼
thick films
解釋
厚膜-
Study on thick films one pack intumescent fire retardant coatings of steel structures
厚型單組分膨脹型鋼結構防火塗料的研製 -
Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。 -
The chemical compositions of sei films formed on the interfaces of a3000 samples in different electrolytes during the first charging process are mainly li2co3 and lioco2r, but their textures are different. the sei films formed in ec - based electrolytes are thin and compact, which can prevent the solvated lithium ions from cointercalating between two graphene layers of the graphite crystallites effectively, therefore samples a3000 have small irreversible capacities and good compatibilities with this kinds of electrolytes. however, the sei films formed in pc - based electrolytes are thick but defective, which could not effectively prevent solvated lithium ions from intercalation, therefore sample a3000 shows large irreversible capacities in pc - based electrolytes and bad compatibilities with this kind of electrolytes
A _ （ 3000 ）試樣在六種不同的電解液中，首次充電過程中所形成的sei膜，其化學組分均為碳酸鋰和烷基碳酸鋰，但在ec基電解液中形成的sei膜薄而緻密，可以有效地阻止溶劑化鋰離子插入石墨層間，不可逆容量少，表現出與a _ （ 3000 ）試樣有良好的相容性；在pc基電解液中形成的sei膜厚，且有缺陷，不能有效地阻止溶劑化鋰離子嵌入試樣中石墨微晶的層間，不可逆容量大，與a _ （ 3000 ）試樣的相容性極差。 -
Methods preparing the capf by the methods of even thick liquid making films and observing the effect of capf on oral ulceration of rat stimulated by phenol
方法採用勻漿制膜法制備復方蘆薈多糖膜劑，然後觀察復方蘆薈多糖膜劑對石炭酸造成大鼠口腔潰瘍的藥效。 -
Deposition of zno films on thick diamond films
射頻輝光放電自偏壓對類金剛石碳膜結構和性能的影響 -
For xrd, ellipsometry examinations, single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry, double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used. the cu - mgf2 cermet films were from 50 to 600nm thick
用於xrd分析、橢偏測量的單拋si （ 111 ）晶片和電阻測試的載玻片上淀積膜厚約為600nm ；用於ir測試的雙拋si （ 111 ）晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ；用於透射電鏡分析的樣品則淀積在400目銅網上的支撐formvar膜上，膜厚約為50 100nm 。 -
Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the
總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。 -
Abstract : the light atom imaging method in high resolution transmission electron microscopy ( hrtem ) and its application in crystal structure analysis for a series of metastable oxides of copper, nickel and silver is described. the idea stemming from this method has been extended to show the possibility of observing surface structure in a series of rather thick films with the hrtem plan - view imaging mode
文摘:介紹了利用高分辨電子顯微學進行晶體結構分析的一種方法輕原子成像法的建立過程及其在銅、鎳、銀等金屬的初期氧化（硫化）產物結構分析中的應用.介紹了利用輕原子成像法的思想解決厚膜上觀察表面結構的可能性問題的新進展 -
Infrared detector array with plzt thick films on silicon - based microstructure tunnels
厚膜紅外探測器陣列 -
Yba2cu3o7 - x thick films were also prepared by sol - gel and pmp methods and their sensitivity for oxygen was studied
用sol - gel及pmp等方法制備了ybco厚膜，並研究了其對氧的檢測靈敏度。 -
Square resistance of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear increased and tcr of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear decreased with increase of content of ag. the electric conduction model of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was formed. bapb _ ( 1 - x ) bi _ xo _ 3 based thick film is actually conductive with lead and bismuth oxide, the main factors on the properties of thick film is the electric resistance and contact resistance of conductive particulates ; the electric conduction model of ag - bapb _ ( 1 - x ) bi _ xo _ 3 based thick film : the general structure of conductive network is constructed by conductance chain of ag and is submerged into bapb _ ( 1 - x ) bi _ xo _ 3 based conductive ceram
本文認為: bapb _ （ 1 - x ） bi _ xo _ 3厚膜電阻是一種摻有鉛、鉍氧化物的導電陶瓷燒結體，影響厚膜電阻導電性能的主要因素是導電顆粒自身電阻與顆粒間接觸電阻;厚膜電阻摻銀后的導電微觀結構是由許多微小串聯或並聯的ag顆粒組成的導電鏈構成的結構復雜的多維導電網路，此導電網路被「淹沒」在bapb _ （ 1 - x ） bi _ xo _ 3導電燒結體中。 -
But polycrystalline cvd diamond films have rough and non - uniform thickness which can adversely affect their application. furthermore, it is difficulty to machining the cvd diamond thick - film
但是， cvd金剛石膜為多晶材料，表面為雜亂分佈的晶粒的堆積，顯露出明顯的稜角，表面粗糙度大，后續加工比較困難。 -
Using “ envelop method ”, we obtained the thick of bzt thin films about 301. 3 nm and change of refractivity with the frequency of
利用x - ray衍射分析表明， bzt薄膜在550時開始有鈣鈦礦相生成。 -
The nanoporous structure of films greatly enhanced the active surface area available for p - cd binding by a factor of 25 for a lum - thick - film. based on multiple linear regression, concentrations of o, p, m - bimethyl - benzene and o, p, m - nitro - phenol have been measured with present sensor
納米tio2膜每增厚1 m ，環糊精的固載量平均增加25倍，該方法可大大地提高傳高器的靈敏度。 -
To this end, we have performed in situ ellipsometry measurements while etching through homogeneous, comparatively thick sige films of a known ge content
為此，我們實施了對于刻蝕均勻的比較厚的已知鍺濃度的鍺硅薄膜的同步橢偏測量。 -
Evidence shows these films to be generally one molecule thick, and such surface films are called spread monolayers.
有證據表明，這些膜一般都是一分子厚。這樣的表面膜叫做分散單分子層。 -
Surface treatments for copper and copper alloy parts with super - thick oxide films
超厚氧化皮銅及銅合金零件的表面處理
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