thin-film semiconductor 中文意思是什麼

thin-film semiconductor 解釋
薄膜半導體
  • thin : adj (thinner; thinnest)1 薄的 (opp thick); 瘦的 (opp fat stout); 細小的;【印刷】細體的。2 ...
  • film : n 1 薄層,薄膜;薄霧,輕煙;細絲狀的東西。2 【攝影】感光乳劑,照相軟片,電影膠片;影片。3 〈 pl ...
  • semiconductor : n. 【物理學】半導體。
  1. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究,獲得以下幾點結果: ( 1 )膜厚在8 - 25ml之間時,薄膜面內的磁晶各向異性為四度對稱各向異性,垂直單軸各向異性比同厚度的fe gaas系統小許多,而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  2. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ,從純電學的角度觀察了plct薄膜中的電疇動態反轉過程,由電疇橫向擴張的移動速度的降低,發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度,得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象,結果表明空間電荷是發生極化弛豫的主要原因。
  3. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ,激子束縛能為60mev ,具備了室溫下發射紫外光的必要條件,在紫外探測器、 led 、 ld等領域有著巨大的發展潛力; zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  4. Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content, while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content

    實驗結果表明:隨zr含量的增加, vo _ 2薄膜的半導體-金屬轉變溫度和電阻突變數量級呈線性下降,同時,隨摻雜量的增加, vo _ 2薄膜的熱滯寬度的變化規律是先減小后增大。
  5. Manufactures pressure sensors, transducers, load cells, accelerometers, force sensors and strain gages from stock. specialist in micro - miniaturization and applications of semiconductor, thin film, metallic foil and hybrid circuit technologies for the measurement of acceleration, force, and pressure in a multitude of environments

    -提供薄膜制備微粉制備真空冶金分子束外延磁控濺射化學氣相沉積電子束鍍膜激光鍍膜甩帶機磁控電弧爐空間環境模擬等設備
  6. Bourdon springs, diaphragms, capsule springs and magnetic pistons are used as the mechanical pressure sensing element ; electronic pressure gauges and switches are based on thin - film technique, ceramic - or piezoresistive semiconductor sensors

    機械壓力傳感器元件有波登彈簧,橫膈膜,圓柱體彈簧和磁感活塞。電子壓力儀表和開關則是基於薄膜技術,陶瓷或壓阻半導體傳感器。
  7. The inductor, which is one of the most important magnetic components, is not only used in lc filter and choke but also in rf communication circuit. the thin film inductor can be integrated with semiconductor components, so far it has not been widely used in these fields, the reason is the limited of thin - film material and substrate, process technology and design technology. designing and fabricating thin film inductor is the key point of this paper

    而作為磁性元器件中最重要的電感,它不僅在lc濾波電路、扼流圈中必不可少,在現代射頻通信電路中也被廣泛使用,特別是能與硅器件一起集成的薄膜電感器,在國際上備受重視,而國內長期以來,由於受薄膜磁芯材料、繞組材料、基片材料,包括製作技術及最為關鍵的設計技術限制,尚未研發出能夠用於這一應用領域的高、中、低頻薄膜電感器。
  8. Manufactures thin film thickness and optical constants measurement systems using non - contact optical technology for the semiconductor, optical, and coating industries

    -集機電設備儀表儀器機械工具救援設備的研製開發銷售為一體的電氣設備企業。
  9. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統,在si襯底上沉積氮化硼薄膜,用離子注入的方法在制備好的bn薄膜中分別注入s和be ,成功的制備了bn / sin - p和bn / sip - p薄膜異質結,用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線,用c - v儀測得bn / si薄膜異質結的c - v曲線。
  10. In this study, on the base of the present status and future development of semiconductor materials for solar cells, we have carried out the work to compose film structures of si - based materials by theoretical analysis and experimental methods, which have potential application in modules of solar cells. the processing, features of microstructure and optical properties of the designed si - based thin films have been studied in detail by employing methods of xrd, sem, afm, tem, raman, ftir, uv - vis, pl, and ellipsometry spectroscopy ( se )

    本文在全面總結目前太陽電池材料的研究現狀和其未來發展趨勢的基礎上,系統地從理論和實驗兩方面對應用在太陽電池板上的si基薄膜材料的結構進行了設計,用超高真空磁控濺射儀研究了其制備工藝,用了xrd 、 sem 、 afm 、 tem 、 raman 、 ftir 、 uv - vis 、 pl和橢圓偏光儀( se )等分析手段研究了薄膜的相結構、微觀組織特徵和其所具有的光性能。
  11. A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by cvd, while supplying a first process gas for film formation and. a second process gas for reacting with the first process gas to a process field accommodating the target substrate

    本發明揭示一種用於半導體製程之薄膜形成方法,其系配置成藉由cvd在目標基板上形成薄膜,同時將用於薄膜形成的第一製程氣體及用於與該第一製程氣體反應的第二製程氣體供應至一容納該目標基板的製程區域。
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