threshold dose 中文意思是什麼
threshold dose
解釋
低限劑量-
For the stochastic effect, a threshold does not exist, but the probability of having detrimental effect is proportional to the dose absorbed
而後者沒有劑量閥值，但效應出現的機會率與劑量有關。 -
An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry
該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
This paper stuffed with twelve important grain and vegetable crops, studied the injury symptom, dose reaction, injury threshold value and influential factor of main pollutant so2 on various plants, tested the dynamic transformation of pod, cat, mda, soluble protein, free pro and chlorophyll of resistant plant and sensitive of these physiological biochemical transformation with plant resistant ability. meanwhile, simply studied the protective role of the five compounds on plant. the result indicated the followings
本實驗以12種重要的糧食和蔬菜作物為研究對象，研究了主要大氣污染物二氧化硫（ so _ 2 ）對不同植物的傷害癥狀、劑量反應、傷害閾值以及影響因素，測定了抗性和敏感植物在受到so _ 2污染后植物體內過氧化物酶（ pod ） 、過氧化氫酶（ cat ） 、丙二醛（ mda ） 、可溶性蛋白質、游離脯氨酸和葉綠素的動態變化，並分析了這些生理生化變化和植物抗性的相互關系，同時還對5種化合物溶液對植物的保護作用進行了初步研究，結果表明： 1 -
In the field of the phytoremediation of copper pollution, submerged macrophytes are focused less than the terrestrial plants. in this study, ceratophyllum demersum l. and cahomba caroliniana a. gray were used as the test plant. the following two aspects were investigated in vivo methods : 1 ) the toxicity effects of cu2 + on the three main antioxidant enzymes ( including cat, pod and sod ) of two submerged macrophytes were detected at different low doses and on the chronic exposure, in order to establish the dose - effect relationship and the time - effect relationship, and thereby acquire the toxicity threshold ; and 2 ) with two submerge macrophytes throng cultured individual or combined on the chronic exposure, it was found on the bcf of copper and the influence of interspecific relationships to the submerge macrophytes resistance or bioconcentration
本論文以兩種大型沉水植物金魚藻（ c . demersuml . ）和水盾草（ c . carolinianaa . ）為受試植物，從它們對水體中cu ~ （ 2 + ）的生物富集作用和動態，以及cu ~ （ 2 + ）對它們體內抗氧化酶的急性毒性效應和亞急性毒性效應兩方面進行了研究： 1 ）通過體內暴露不同劑量的cu ~ （ 2 + ） ，探討cu ~ （ 2 + ）對植物體內三種主要的抗氧化物酶（ sod ， pod ， cat ）的毒理效應，建立劑量?效應關系和時間?效應關系，以揭示沉水植物對cu ~ （ 2 + ）的抗性機制； 2 ）通過對金魚藻，水盾草單獨培養和共同培養的方式，分別研究了兩種沉水植物對cu ~ （ 2 + ）的生物富集系數及其動態以及兩種植物的種間關系對富集銅和植物耐性的影響，綜合評價了兩種植物在銅污染水體的植物修復中的應用前景。 -
6. the plant is comparatively sensitive in two leaves period. so we can use the dose reaction to so2 in two leaves period as the injury threshold value to classify resistant ability type
6 .植株在2片真葉期對50 :比較敏感，因此可以採用植物在2片真葉期對50 :的劑量反應作為受害閡值來劃分抗性類型。 -
The severity of stochastic effects is independent of the absorbed dose. under certain exposure conditions, the effects may or may not occur. there is no threshold and the probability of having the effects is proportional to the dose absorbed
隨機性效應隨機性效應的嚴重程度是不受吸收劑量的大小影響。在一定的照射條件下，效應可能出現，也可能不出現，而發生的機率則與劑量大小有關，並且不存在劑量閾值。 -
The probability of occurrence is proportional to the dose but there is no threshold below which it can be stated that the probability is zero
這種隨機效應產生的機會隨劑量遞增而增加，但並無產生機會相等於零的安全值界線。 -
Under certain exposure conditions, the effects may or may not occur. there is no threshold and the probability of having the effects is proportional to the dose absorbed
在一定的照射條件下，效應可能出現，也可能不出現，而發生的機率則與劑量大小有關，並且不存在劑量閾值。 -
It is shown that substrate current is not the good indication of hot carrier effect in sde structures and using a threshold degradation criterion to characterize device degradation is not suitable for sde structures. third, the effect of the sde implant dose on the hot carrier immunity is thoroughly studied
在此基礎上，指出採用峰值襯底電流評估sde結構器件可靠性的局限性，以及在採用i - v特性測試方法研究sde結構器件的熱載流子效應時，閾值電壓作為退化判據所存在的問題。 -
Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低劑量輻照條件下的mosfet因輻照導致的閾值電壓漂移的模擬 -
Calculation of absorbed dose from neutron irradiation by application of threshold - foil measurement data
用分界箔測量數據計算來自中子輻射的吸收劑量
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