threshold temperature 中文意思是什麼

threshold temperature 解釋
低限溫度
  • threshold : n. 1. 門檻；入口，門口。2. 【心理學】閾限。3. 界限，限度。4. 【物理學】臨界值，閾。5. 入門，開始，開端。
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters

    這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。
  2. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  3. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  4. Increasing ultrasound intensity in the range of cavitation threshold and cavitation peak value, decreasing monomer concentration and increasing the temperature make the induction period shorter. under optimized reaction conditions, the conversion of ba can reach 90 % in 11 min at high n2 flow rate the viscosity average molecular weight of the obtained pba reaches 5. 24 106. the molecular weight of pba varies with ultrasonic irradiation time, indicating that the ultrasonic induced emulsion polymerization is dynamic and quite complicated, polymerization of monomer as well as degradation of polymer occurs concomitantly

    一、實現了無常規化學引發劑存在下的超聲輻照引發丙烯酸正丁酯（ ba ）間歇乳液聚合，制備了pba納米粒子，在11min內轉化率達到90 ，分子量達5 . 24 10 ~ 6 ，隨反應時間的延長而降低，表明超聲輻照引發乳液聚合是一個動態的復雜過程，單體的聚合和聚合物的降解同時發生。
  5. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  6. The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature

    研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。
  7. After which, the battery will be charged by large constant current to allow the fast charging. finally, the constant voltage charging is adopted to guarantee the battery was charged to its full capacity. under the condition that the temperature has raised to a certain threshold at the constant current charging stage, the over temperature circuit is performing and it provides a compensation current which switches the system to constant temperature charging mode with the intention of protecting the ic

    即在充電初期採用較小的電流對電池進行預處理，對出現過放電的電池進行修復和保護;然後採用較大的恆定電流對電池充電，實現快速充電的目的;最後採用恆定壓充電，確保電池充滿;在恆流充電階段，當晶元溫度上升到一定程度時，晶元過熱保護電路開始工作，該電路以提供充電補償電流的形式使充電進入恆溫充電模式，對晶元進行保護。
  8. The development threshold temperature and effective accumulative temperature for whole generation were 6. 68 and 742. 97 day - degrees, respectively

    花翅搖蚊的世代發育起點溫度和有效積溫分別為6 . 68和742 . 97d ? 。
  9. The results show that at a given substrate temperature, there is a compressive stress threshold, below which cbn phase is thermodynamically stable and p above which hexagonal bn ( hbn ) phase is thermodynamically stable

    結果表明，在給定的襯底溫度下，存在一個壓應力閾值，壓應力低於此值時立方相是熱力學穩定相，壓應力高於此值時，六角相是熱力學穩定相。
  10. Hot stretching ratio ( hsr ) was maintained at 3. 96, cb content was changed. the results indicate that when the cb content increases, the room temperature resistivity of composites decreases. at the cb content of 12phr, the room temperature resistivity of blends sharply reduces, and composites change from insulator to conductor, the value is entitled the percolation threshold ; at the cb content of 20phr, the room temperature resistivity of composites achieves 10 ~ ( 2 ) cm

    結果表明:隨炭黑含量增加，復合材料的體積電阻率降低，當炭黑含量達到12phr （ phr指每一百份樹脂中所含填充物的重量份數）左右時，復合材料的體積電阻率急劇下降，此時一復合材料由絕緣體向導體轉變，這個值被稱為逾滲閥值;當炭黑含量到20phr時，復合材料的體積電阻率達到1 。
  11. When the energy distribution of secondary neutron are represented by evaporation spectrum ( lf = 9 ), care must be taken in describing the nuclear temperature near the threshold

    通過分析發現，評價次級中子能譜數據所採用的蒸發譜模型大都忽略了能級密度參數與激發能之間的關聯。
  12. The initial development threshold temperature and effective accumulated temperature of whole generation were determined as 8. 40 and 456. 09, respectively

    全世代的發育起點溫度和有效積溫分別為8 . 40和456 . 09日度。
  13. It indicated that the threshold temperature 7j, 1 of three kind of domains are identical. that is to say, when temperature reach 7j, 1, vbl in the walls of the three kinds hard domain begin to lose gradually

    此外，硬磁疇疇壁中vbl的分佈問題至今仍然沒有得到很好的解決，也就是說vbl究竟是充滿整個拉長的疇壁還是部分地佔據呢？
  14. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  15. Threshold temperature and effective temperature of oligonychus perditus

    柏小爪蟎發育起點溫度和有效積溫的研究
  16. Threshold temperature and effective temperature sum of liriomyza huidobrensis

    南美斑潛蠅發育起點溫度和有效積溫的研究
  17. Threshold temperature and effective temperature sum of the pollen beetle haptoncus luteolus

    棉露尾甲發育起點溫度和有效積溫的研究
  18. In 1992, li zhiqing ' s master degree paper, the temperature stability of vertical bloch line ( vbl ) chains in walls of second hard dumbbell domain ( iid ) in the uncompressed state was investigated experimentally and a threshold temperature ( 7 ) nd at which to breakdown the vbl chains in the walls of iid was found

    由於其轉化過程中vbl沒有丟失，也就是說，其疇壁結構沒有發生變化，所以我們再次證明了三類硬磁疇的疇壁結構是一致的，在直流偏場下之所以會出現不同的縮滅行為，完全是由於vbl的數目引起的。
  19. Once elps in solution reach a certain threshold temperature, they assemble into protein aggregates

    當這種蛋白質達到閾溫度時，便會聚集成聚合體。
  20. 05. 02 test method for reaction threshold temperature of liquid and solid materials

    液體和固體材料反應的極限溫度的試驗方法
分享友人
分享到 Line

分享到臉書