transfer gate 中文意思是什麼
transfer gate
解釋
傳輸門-
A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。 -
Transfer crane gate type
門式搬運吊車 -
Herein we designed and synthesized three photoinduced electron transfer ( pet ) phosphoroionophores, ( 1 - bromo - naphthalen - 2 - ylmethyl ) - bis - ( 2 - hydroxyl - ethyl ) - amine ( bnd ), ( 1 - bromo - naphthalen - 2 - yl - methyl ) - bis - ( 2 - cholor - ethyl ) - amine ( bnc ) and 7, 16 - bis - ( 1 - bromo - naphthalen - 2 - ylmethyl ) - 1, 4, 10, l3 - tetraoxa - 7, l6 - diaza - cyclooctadecane and their phosphorescent characteristics were studied, compared with 1 - bromo - 2 - methylnaphthalene. the experimental results showed that strong p hosphorescence could be observed in p - cyclodextrin aqueous solution only at low ph value. this system combined and and not function to produce a three - input inhibit ( inh ) logic gate
實驗結果表明，在環糊精水溶液中只有在較低ph時，才能有效抑制分子內的pet過程，使磷光體發射強的磷光，體系的磷光狀態為off - on ，同時體系包含了and （ - cdandproton ）和not （ o _ 2 ）邏輯功能，可作為一種三輸入的inhibit邏輯開關。 -
At last, a buried - channel ccd ( bccd ) is simulated by the developed software. the influences of some parameters such as the gate length, the gap width between the gates and the depth of the channel to the performance as charge handling capacity and charge transfer efficiency of the bccd are discussed. and the dark current is also analyzed
最後利用該軟體實際模擬了電注入的埋溝ccd器件，詳細討論了柵長，柵間隙寬度和埋溝深度等參數對該結構ccd的電荷容量和轉移效率的影響，同時，還分析了少子壽命對暗電流的影響。 -
And the process of functional verification consists of the implementation of rtl ( register transfer level ) simulation, gate level simulation and post - layout simulation in the process of design
驗證最關鍵的是測試方案的制定，而功能驗證的過程是在於在設計過程中實施rtl級模擬、門級模擬和后模擬。 -
Third, it is that carries out a detailed and systematic study of the basic principles of cesd. the paper particularly makes the following extensions to cesd, such as or gate, “ n / k ” gate, expandable gate, feedback gate and renewable unit and transfer gate
（ 3 ）根據實際應用需要對逆向esd進行了擴展，提出了或門、反饋、可擴展門、自恢復、可更換單元、 n中取k門和轉移門等圖形符號，豐富完善了逆向esd的建模元素。 -
2. 83 inch tft lcm, which works in de transfer mode, was designed. the tft lcm including 3 driver ic chips, hd66783 1 as gate driver, hd66779 2 as source driver, has 262k colors depth, 240 ( rgb ) 320 dots pixels
本課題基於tftlcm的驅動原理，設計了一款2 . 83inchtftlcm模組，並對其模組設計、測試方案進行了研究。
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