transistor bias 中文意思是什麼
transistor bias
解釋
晶體管偏壓- transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
- bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
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The positive-going signal subtracts from the forward bias of the lower transistor.
正向信號則使它的正向偏壓減弱。 -
The low insertion loss is achieved by optimizing the transistor widths and bias voltages, by minimizing the substrate resistances, and by dc biasing the transmit and receive nodes, which decreases the capacitances while increasing the p1db
通過優化mosfet的柵寬及偏置電壓可以降低插入損耗。在版圖設計中通過增加襯底接觸降低襯底電阻，從而減小插入損耗。另外，為接收和發送端提供直流偏置可以降低p1db 。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
Next, basing on discrete electric potential, plots the distributing figure of the electic potential and electic field, and analyzes relationship between the operational characteristics of static induction transistor and the structure parameter and bias voltage
其次依據求得的離散電位值，繪制相應的電位分布圖形和電場分布圖形。最後通過對圖形的分析，解析有機靜電感應三極體的工作特性與器件結構參數和所加偏壓的關系。 -
Broadband matching is very difficult, but we can make it easier with negative feedback and balanced amplifier. so at first we should choose a project, then according to the requirement of the low noise amplifier to choose the transistor, bias and matching
寬帶匹配網路的設計是一個難點，可以採用負反饋、平衡電路等形式降低寬帶匹配的難度，所以寬帶電路的設計首先是方案設計。 -
Transistor bias circuit
晶體管偏壓電路 -
To reduce power dissipation of the amplifier, a kind of on / off technology is used in the circuit. with a little bias current circuit to control the main bipolar transistor operation, the transistor will be in a state of on / off
採用器件旁路小電流工作電路，實現對低噪聲放大器主要工作晶體管的控制，使該晶體管按需要分別處于工作或關斷狀態，保證了放大器的極低功耗。
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