ulsi 中文意思是什麼
ulsi
解釋
超大規模集成電路-
Simulation of thermal performance of ulsi interconnect system
互連系統熱特性的模擬 -
Copper electrodeposition in ulsi
超大規模集成電路中的電沉積銅 -
Influence of interconnection configuration on thermal dissipation of ulsi interconnect systems
超大規模集成電路互連系統的布線構造對散熱的影響 -
Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )
隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。 -
With the high speed development of computer, the integrated circuit as the basis of computer have been developed from vlsi to ulsi
隨著科學技術的飛速發展，計算機不斷更新換代，存儲容量在不斷的增長，作為其基礎元件的集成電路已由超大規模（ vlsi ）向甚大規模（ ulsi ）階段發展。 -
The n / n + and p / p + epitaxial structures, which become popular with the development of coms technology, because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique
Coms工藝中普遍採用n / n ~ + 、 p / p ~ +的外延結構，這種以重摻雜矽片為襯底的外延結構與內吸雜工藝相結合，是解決集成電路中的閂鎖效應和粒子引起的軟失效的有效途徑。 -
State - of - the - art of the on - chip copper interconnect technology for ulsi ' s
集成電路片內銅互連技術的發展 -
In this thesis, focusing on the copper diffusion failure of copper interconnects in the ulsi, such as electromigration, stressmigration and copper diffusing into silicon dioxide and silicon, the microstructure and the stress of copper interconnects in ulsi have been studied systemically
本論文從ulsi銅互連技術可靠性研究中的銅擴散失效問題出發，針對電徙動失效、應力遷移失效、層間擴散失效問題，對銅互連線的微觀結構和應力進行了研究。 -
Development of diffusion barrier for cu interconnection in ulsi
互連擴散阻擋層的研究進展 -
With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。 -
For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi
另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。 -
Chemical mechanical polishing for mutilevel interconnect in ulsi
多層互連中的化學機械拋光工藝 -
Recently, the n / n + and p / p + epitaxial structures have been applied in the study and production of microwave transistor and ultra - large - scale integrated circuits ( ulsi ), and the memorial maintain time of dynamic random access memory can be improved, latch - up effect and soft - error induced by a particles can be resolved through the combination of epitaxy and ig
採用這種結構與ig工藝相結合，能夠大大地提高動態存儲器dram的記憶保持時間，是解決電路中閂鎖效應（ latch - up ）和粒子引起的軟失效（ soft - error ）的最佳途徑。 -
As the development of microwave technology and the universal use of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), traditional automatic testing technology for pcb ( printed circuit board ) is faced with a rigorous challenge
隨著微波、毫米波技術的發展以及超大規模集成電路（ vlsi ） 、極大規模集成電路（ ulsi ）的相繼誕生和廣泛應用，傳統的電路板自動測試技術受到了前所未有的挑戰。 -
Vdsm ulsi place and route optimization research
布局布線優化設計研究 -
The information revolution and coming period of ulsi silicon chip, which make the performance integration of chip unit continually increase, drive the demands for larger circuit density and greater performance
=信息革命及ulsi矽片時代的來臨，使單片功能集成度持續增長，驅動著對更大電路密度和更高性能的需求。 -
Theoretical calculation on the mechanical characterization of ulsi two - layer interconnect films by surface acoustic waves
互連布線雙層薄膜機械特性的理論計算 -
Nowadays, coms technology has been extensively applied for ulsi ( ultra - large - scale integrated ) circuits industry
現代超大規模集成電路（ ulsi ）製造過程的主流工藝為coms工藝。 -
Four - point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry. with continuous progress, semiconductor industry develops at a very fast speed, the integration level of ic becomes higher and higher. presently, the ic production is entering into the age of ulsi, then testings are more and more important
四探針測試技術是半導體工業檢測電阻率時採用最為廣泛的測試手段之一。隨著時代的不斷進步，半導體產業飛速發展，以單晶矽片為襯底的集成電路集成度越來越高，目前正進入甚大規模集成電路（ ulsi ）時代，測試在整個集成電路生產過程中的地位越來越重要。 -
During the fabrication or service, if the applied tensile stresses exceed the probabilistic tensile strength of silicon, then failure will occur. even a tiny crack will bring tremendous damage to devices and circuits. especially nowadays, with the increasing of silicon wafer diameter, warpage in heat treatment, defects and dislocations generated in silicon often become critical problems in ulsi devices fabrication
特別在大規模集成電路與器件生產中，一個微小的裂紋就可能導致后道工序中電路與器件的完全損壞；而且在熱處理過程引起的翹曲，使光刻精度下降；在矽片內部產生的氧沉澱及位錯等缺陷，會導致集成電路或器件的漏電流增加，使器件失效。
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