ultraviolet band 中文意思是什麼

ultraviolet band 解釋
紫外波段
  • ultraviolet : adj. 【物理學】紫外的；紫外線的；產生[應用]紫外線的。n. 紫外線輻射。
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  2. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  3. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  4. Hydrogen, fluorin, carbon and oxygen are familiar elements in ps confirmed by different experiments. porous silicon can radiate strong near infrared, visible and near ultraviolet light, but whole s band is most interested in

    經過陽極化處理后得到的多孔硅能發射較強的近紅外、可見和近紫外光，而人們最關注的是ps在整個可見光波段（ sband ）的發光。
  5. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  6. First, the apparatus of spectral irradiance calibration is set up, and ultraviolet spectrum band uses a standard lamp offered by standard metrological institute of china, while vacuum ultraviolet spectrum uses a deuterium transfer lamp

    地面輻射定標分為光譜輻照度定標和光譜輻亮度定標。光譜輻照度定標中選用了鹵鎢燈作為250nm 400nm標準光源，氘燈作為200nm 300nm的傳遞光源。
  7. Near ultraviolet band

    近紫外區
  8. Determination of hydroxybenzene in water by ultraviolet spectrophtometry is based on the theory that hydroxybenzene has absorption spectrum in ultraviolet band

    摘要根據酚類在紫外區有吸收光譜的原理，以紫外分光光度法直接測定水中酚。
  9. The suitable ultraviolet absorption band is selected via experiment

    通過實驗研究選定檢測紫外吸收波長。
  10. The ultraviolet absorption edge becomes steep and moves to longer wavelength, and the optical band gap decreases. the optimal quality and ultra - violet absorption property of the zno thin film annealed at 450 are obtained

    中性氣氛中退火薄膜的電阻率基本不變，在真空和還原氣氛中薄膜的導電能力增強，而在氧化氣氛中薄膜的電阻顯著增加了七個數量級，成為絕緣薄膜。
  11. Standard test method for calibration of narrow - and broad - band ultraviolet radiometers using a spectroradiometer

    使用光譜輻射計校準窄帶和寬帶紫外輻射計的標準試驗方法
  12. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
  13. The technology on the processing and detection of the extreme - ultraviolet radiation and x - ray ( euv / x - ray ) optical component is one of the main categories in modern short - wave band optical research

    極紫外與x射線（ euv x - ray ）光學元件的加工與檢測技術的研究是近代短波段光學研究的主要范疇之一。
  14. The zno particles are excited by ultraviolet ( uv ) exciting light ( 365 nm ), showing two photoluminescence ( pl ) peaks / bands, centered at 2. 90 ev ( blue ) and 2. 23 ~ 2. 41 ev ( yellow - green ), respectively. the intensity of the yellow - green band was reduced after the product had been annealed in n2 and o2 at 350 c for 1h. ultraviolet visible absorption spectrum shows that the zno absorbs ultraviolet light intensely

    對于復合h ps zno結構的發光機制，認為是納米h價帶中的電子在紫外光的激發下，躍遷到zno的導帶，從而處于激發態，由於多孔硅的導帶比氧化鋅的導帶低， zno導帶中處于激發態的電子很快躍竄到多孔硅的導帶，然後再與h價帶中的空穴發生復合，發出可見光。
  15. Generally, the gravity introduced deformation of an optical lens with smaller aperture ( < ( 100mm ) within visible band is about ( / 20 even less than this value. for general optical lens, this error level can be entirely neglected. but for the high - accuracy optical system within extreme ultraviolet band, the error caused by gravity deformation will lead to imaging quality degradation

    本文較為系統地介紹了光學鏡頭的裝配與調校方法，一般地講，在可見波段內，光學鏡片口徑較小（ < 100mm ）時，重力引起的變形一般/ 20左右甚至更小，對於一般的光學鏡頭這樣量級的誤差完全可以忽略，但在極紫外短波長的高精度光學系統中重力變形帶來的誤差會使光學系統成像質量下降。
  16. Recently there has been an extensive worldwide effort to synthesize bn films and investigate ultraviolet sensitive properties of bn, which has an important significance to the development of ultraviolet band detecting

    氮化硼薄膜材料的制備及其紫外光敏性能研究，是近年來寬禁帶半導體材料研究的熱點課題，對紫外波段信息探測領域的發展有重大意義。
  17. It is proved that it has many attractive features ( 1 ) its applicable spectral range is broad, many liquid crystals have very large birefringence and good transparency in both near ultraviolet band, visible band and infrared band

    本文重點研究了可調諧液晶電光濾光片，它的主要優點有： 1 、可應用的光譜范圍特別寬。許多液晶在紫外、可見光、紅外都具有較大的雙折射率和良好的透射性。
  18. Based on these above, the practical realization of bnxpi - x film applied in the ultraviolet band detecting device - ultraviolet liquid crystal light valve is discussed. the experiments and theory analyses prove that bnxpi - x film is a suitable candidate for ultraviolet liquid crystal light valve

    在以上對氮化硼薄膜以及磷摻雜氮化硼薄膜制備工藝、性能和微結構研究分析的基礎上，本論文還探討了薄膜材料在紫外空間光探測器件?紫外液晶光閥上應用的可行性。
  19. The nano - zno had high transparence property in the band of visible light, while the commercial zno powder was opaque. at the same time, nano - zno had wide absorption frequency as well as good absorption effect within the ultraviolet band. with the decreasing of the diameter of nanometer particle, blue shift of absorbing peak was observed

    結果表明：納米氧化鋅在中紅外頻段與普通氧化鋅的吸收能力相當，但由於納米氧化鋅的表面效應，其中紅外吸收峰形狀與普通氧化鋅不同；在可見光區，納米氧化鋅具有普通氧化鋅所不具備的高透光性；而在紫外光區，納米氧化鋅具有很寬的吸收頻段和優異的吸收性能，同時，隨粒徑的減小，吸收峰發生藍移。
  20. We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band

    另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。
分享友人
分享到 Line

分享到臉書