ultraviolet photon 中文意思是什麼

ultraviolet photon 解釋
紫外光子
  • ultraviolet : adj. 【物理學】紫外的；紫外線的；產生[應用]紫外線的。n. 紫外線輻射。
  • photon : n. 1. 【物理學】光子。2. 【醫學】見光度〈網膜照明單位〉。
  1. This is the energy of an ultraviolet photon, a "large" energy on the atomic scale.

    這是一個紫外光子的能量，在原子尺度上，它是一個「大」能量。
  2. Ionizing an atom of hydrogen takes an energy of 13. 6 electron volts, an amount delivered by a photon of ultraviolet light

    游離氫原子需要13 . 6電子伏特，相當於一個紫外光光子所能提供的能量。
  3. Based on the above work, the optical absorption and photoluminescence ( pl ) properties of a - sinx : h films with different compositions are studied through ultraviolet - visible spectroscopy ( uv - vis ) and time - resolved photoluminescence ( tr - pl ), the dependence of pl intensity decay on emission photon energy is found, the luminescence mechanism of nanosilicon embedded in silicon nitride matrix is presented, finally, the effective approaches to improving the luminescence efficiency of a - sinx : h films are discussed

    在此基礎上，通過紫外-可見光譜（ uv - vis ）技術，時間分辨光致發光譜技術研究了不同組分的富硅a - sin _ x ： h薄膜的光吸收和光輻射特性，得到了材料光致發光衰減和輻射光子能量之間的關系，提出了鑲嵌在氮化硅中的納米硅的發光機制，進而探討了提高納米硅薄膜發光效率的有效途徑。
  4. The infrared results showed that the ir characteristic value l080cm - lof cubic crystal sio, and the absorption peak 460cm - l of mgf, caused by the interaction between f - - mg ' + - p elastic vibration and photon radiation, appeared in the ir spectra. ellipsometric analysis showed that the typical absorption peaks 58lnm, 589nm and 606nm, resulting from the surface plasma resonance of cu panicles and reflecting the absorption on composite film system, appeared in the extinction coefficient k curves of cu ( voll5 % ) mgf, cu ( vol20 % ) mgf, and cu ( vol30 % ) mgf, cermet films, respectively. with the component of cu increasing, the peak site presented red shift, which was in accordance to the results of ultraviolet - visible spectra

    橢偏測試分析表明： cu （ vol15 ） mgf _ 2 、 cu （ vol20 ） mgf _ 2和cu （ vol30 ） mgf _ 2樣品的消光系數k曲線中出現了反映復合金屬陶瓷體系吸收的由cu金屬顆粒表面等離子體共振引起的吸收峰，峰位分別為581nm 、 589nm和606nm ，呈現紅移，這些與紫外-可見光譜測試結果相一致；此外， cu - mgf _ 2復合納米金屬陶瓷薄膜光學常數的實驗值與考慮尺寸效應修正過的mg理論值總體上符合得很好。
  5. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻（ euvl ， extremeultravioletlithography ）技術作為下一代光刻技術中最佳候選技術，建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上，工作波長為11 14nm ，適用於製造特徵尺寸為65 35nm的數代超大規模集成電路，預計在2006年將成為主流光刻技術。
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