v i characteristic 中文意思是什麼

v i characteristic 解釋
伏 安特性
  • v :
  • i : pron （pl we ） 〈人稱代詞，第一人稱，單數，主格。 （poss adj my; obj me; poss pro mine ） 〉我。...
  • characteristic : adj 有特性的；表示…特性的，…特有的。 Japan s characteristic art 日本特有的藝術。n 特性，特徵，性...
  1. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  2. The device i - v characteristic curves " shangqiao at high temperature while not at low temperature shows the hot electrons effect at high temperature result in this

    高溫下器件i - v特性曲線有上翹現象出現，低溫情況下未觀察到此現象，這是由於高溫下的熱電子效應所致。
  3. The analysis of i - v characteristic and microstructure shows that the failure of device results from the gate sinking and ohmic contact degradation

    通過溫度斜坡試驗，對器件試驗前後的i - v特性的對比分析和微結構的分析表明，歐姆接觸退化和柵下沉共同導致了器件的失效。
  4. For ac electric arc furnace is an unbalanced, nonlinear and time variant load that produces unbalance, harmonics and interharmonics related with flicker effect. the modeling of all these aspects requires adopting a nonlinear, asymmetrical and dynamic v - i characteristic for the electric arc

    由於交流電弧爐是一種不平衡的、非線性時變負載，它產生與電壓閃變有關的不平衡、諧波和分數諧波，所有這些就需要一種非線性、不對稱的動態u ? i特性的電弧爐模型。
  5. In this paper, after studying the technology of virtual instrument and the characteristics of ld, we developed the ld test system using the design idea of virtual instrument 。 the system is mainly used for test the threshold current, differential efficiency, v - i characteristic and p - i characteristic of ld module

    本課題在對虛擬儀器技術和半導體激光器各項性能參數深入研究的基礎上，採用虛擬儀器的設計思想，研究開發了基於虛擬儀器技術的半導體激光器特性參數檢測系統。該系統主要面向組裝后的激光二極體組件，對其進行電流閾值（ ith ） 、光電特性（ p - i ） 、電抗特性（ v - i ）等主要特性的測試。
  6. This subject is a research about manufacturing silicon magnetic - transistor with rectangle - plank cubic construction on silicon surface by mems technology, meanwhile it also makes a experiment - research on characteristic of silicon magnetic - transistor manufactured experiment expresses that silicon magnetic - transistor with rectangle plank cubic construction which is made by mems technology owns many virtues, which are as follows : first, stronger v - i characteristic curves and higher magnetic sensitivity ( collector current magnetic sensitivity of sample can achieve to 227 % / t ), second, lower negative - temperature coefficient that is small

    本課題主要研究採用mems技術在矽片上製作矩形板狀立體結構硅磁敏三極體，並對製作的硅磁敏三極體樣品基本特性進行實驗研究。實驗結果表明本課題採用mems技術設計、製作的矩形板狀立體結構的硅磁敏三極體樣品具有較理想的伏安特性曲線、具有較高的磁靈敏度（樣品集電極電流磁靈敏度可達227 / t ） 、具有負溫度系數且溫度系數較小、在磁場一定時i _ c i _ b線性關系較好等優點。
  7. The substance on the surface of electrode can combine with the h2 in the electrolyte. this process is proved by the strange shape of i - v characteristic of the electrode

    同時， i - v曲線上出現的奇怪凸起可以解釋為電極表面的吸附物與溶液中的h _ 2結合產生的充放電現象。
  8. This paper analyses, compares and researches the measurement of solar array deeply. the system takes advantage of a new measurement of solar array that samples the signal of voltage and current continually during charging capacitor by solar array to redraw the i - v characteristic of solar array. this method can test the i - v characteristic of solar array conveniently and quickly in contrast with the traditional method

    針對太陽電池陣列的測試方法，本文進行了詳細的分析比較和探討，系統採用一種新型的電容動態充電方式對太陽電池陣列進行特性測試，該方法是通過檢測太陽電池陣列對電容的充電過程中電流、電壓的變化數據，重現光伏陣列的i - v特性，採用這種方式可以快速而方便的測量太陽電池陣列的i - v特性，具有體積小、重量輕等特點，克服了傳統現場測試方法的弊端。
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