v-rf 中文意思是什麼
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( 3 ) chapter v. plasma characteristics of rf ion source is investigated. a zero - dimensional numerical dynamic colisional radiative atomic and molecular ( cram ) model is suggested to simulate the microphysical process. all species " population number densities in plasma are calculated in non - thermodynamics equilibrium condition, and proton content in extracted ion current are measured with 60 ? magnetic analyzer
（ 3 ）提出了高頻離子源等離子體的零維cram模型（ collisionalradiativeatomicandmolecularmodel ） ，計算了非平衡態（ nte ）下等離子體中分子、電子、離子、基態原子、激發態原子等粒子濃度，並在zf - 200kev中子發生器上，用60磁分析器實驗測定了引出束流的質子比。 -
The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter
使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
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