vacancy precipitation 中文意思是什麼
vacancy precipitation
解釋
空位沉澱- vacancy : n. 1. 空虛，空；空間，空隙，空處；空地，空房（等）。2. 精神空虛，心不在焉，沒精神，出神，茫然若失。3. 空位，空額。4. 閑暇；無所事事。
- precipitation : n. 1. 猛然摔下，落下。2. 猛沖；急躁，輕率，魯莽。3. 【化學】沉澱（作用）；降雨（量）；（雨、雪等的）降落。
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Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。 -
We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation
在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
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