vdmos 中文意思是什麼

vdmos 解釋
垂直雙擴散金屬氧化物半導體結構
  1. However, traditional mosfet models in hspice library are built for lateral mosfet with small power and they can ’ t represent the characteristics of power vdmos well

    然而， hspice模型庫中傳統的mosfet模型都是根據橫向結構的小功率mosfet工作機理建立的，無法準確模擬垂直結構的功率vdmos的各種特性。
  2. Power vdmos ( vertical double - diffusion mosfet ) is the most favorable device available for high speed, medium power applications because of its characteristics such as high input impedance, high power gain, easy to drive and good thermal stability

    功率vdmos （垂直雙擴散mosfet ）以其高輸入阻抗、高功率增益、驅動電路簡單和熱穩定性好等優點，在高速度和中等功率場合得到了廣泛的應用。
  3. A sub - circuit model for vdmos is built according to its physical structure. parameters and formulas describing the device are also derived from this model. comparing to former results, this model avoids too many technical parameters and simplify the sub - circuit efficiently. as a result of numeric computation, this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response ( dc error within 5 %, ac error within 10 % ). such a model is now available for circuit simulation and parameter extraction

    從vdmos的物理結構出發建立子電路模型，進而導出描述其交直流特性的參數及模型公式.相對以往文獻的結果，該模型避免了過多工藝參數的引入，同時對子電路進行了有效的簡化.在參數提取軟體中的加載結果表明，該模型結構簡單，運算速度快，物理概念清晰，擬合曲線與測試數據符合精度高（直流誤差5以內，交流誤差10以內） ，適于在電路模擬及參數提取軟體中應用
  4. Abstract : a sub - circuit model for vdmos is built according to its physical structure. parameters and formulas describing the device are also derived from this model. comparing to former results, this model avoids too many technical parameters and simplify the sub - circuit efficiently. as a result of numeric computation, this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response ( dc error within 5 %, ac error within 10 % ). such a model is now available for circuit simulation and parameter extraction

    文摘:從vdmos的物理結構出發建立子電路模型，進而導出描述其交直流特性的參數及模型公式.相對以往文獻的結果，該模型避免了過多工藝參數的引入，同時對子電路進行了有效的簡化.在參數提取軟體中的加載結果表明，該模型結構簡單，運算速度快，物理概念清晰，擬合曲線與測試數據符合精度高（直流誤差5以內，交流誤差10以內） ，適于在電路模擬及參數提取軟體中應用
  5. Base on detailed analysis about physical mechanism of power vdmos, we present a macro - model which can accurately represent the characteristics of target power vdmos from - 50 ~ 125

    此宏模型能在- 50 ~ 125范圍內，準確的模擬功率vdmos的直流和動態特性。
  6. Major contents of this study are abstracted as following : 1. analyze the dc, thermal and dynamic characteristics of power vdmos, and propose a new equivalent circuit

    論文主要工作包括: 1 .詳細研究了功率vdmos的直流特性、熱特性和動態特性，提出一種新的等效電路結構。
  7. This thesis comes from a cooperating project which is to build spice simulation model for a latest power vdmos product of a well - known semiconductor company in the usa

    論文來源於和美國某著名半導體公司合作的項目。本文在深入分析功率vdmos工作機理的基礎上，為其公司最新推出的一款功率vdmos器件建立了hspice模擬宏模型。
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