voltage breakdown 中文意思是什麼

voltage breakdown 解釋
崩潰電壓
  • voltage : n. 【電學】電壓,電壓量,伏特數。 the working voltage (電氣的)耐壓限度。
  • breakdown : n 1 崩潰,倒塌;破損,損耗;損傷;損壞,故障;失敗,挫折;中斷,停止。2 【航空】下降;【電學】擊...
  1. Abd low voltage surge protective devices - specifications for avalanche breakdown diode

    低壓電涌保護裝置.雪崩擊穿二極體
  2. Abd components for low - voltage surge protection devices - part 321 : specifications for avalanche breakdown diode

    低壓浪涌保護裝置元件.第321部分:雪崩擊穿二極體
  3. The lightning impulse breakdown and steep - front impulse breakdown test of silicone rubber are also performed, which give a reference for other so lid materials. the result of this research also will give a reference to revises the standard of steep - front wave impulse voltage test

    為了配合本課題的研究還做了硅橡膠材料的雷電沖擊耐受強度和陡波沖擊耐受強度試驗,這兩個試驗對了解其它固體材料的雷電沖擊系數和伏秒特性也具有參考價值。
  4. Of 30 to 50, an emittercollector breakdown voltage

    為5v ,晶體管的截止頻率
  5. Measuring methods of photocell - inverse breakdown voltage

    光電池測量方法反向擊穿電壓
  6. Insulating liquids - determination of the breakdown voltage at power frequency

    絕緣油擊穿電壓測定法
  7. Temperature coefficient of breakdown voltage

    擊穿電壓溫度系數
  8. Dielectrie breakdown voltage

    介質崩潰電壓
  9. Avalanche breakdown voltage

    雪崩嘩電壓
  10. Output breakdown voltage

    輸出破壞電壓
  11. Drain breakdown voltage

    漏擊穿電壓
  12. Insulating liquids - determination of the breakdown voltage at power frequency - test method

    絕緣液體.電源頻率擊穿電壓的測定
  13. Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage

    針對目前厚外延工藝的缺點,提出的薄外延ldmos採用n埋層,通過優化n埋層長度、注入劑量可提高器件耐壓。
  14. The chemical composition and microstructures of the insulating thin films prepared by different methods were analyzed by x - ray diffraction ( xrd ) and scanning electron micrograph ( sem ) ; other properties such as electric resistance, the breakdown field strength and dielectric properties were evaluated using high resistance meter, voltage resistance meter and precision impedance analyzer respectively

    採用x射線衍射儀( xrd )對表面絕緣薄膜的物相組成進行了分析,掃描電子顯微鏡( sem )對表面絕緣薄膜的微觀結構進行了研究,並用絕緣電阻測試儀、耐壓測試儀和精密阻抗分析儀分別對絕緣膜進行絕緣電阻率、擊穿場強和介電性能的測試。
  15. 2 、 metal halide lights start more difficult than other types of high - intensity gas discharge lights. the work circuit of the metal halide lights and the lc series resonance start controller are analyzed, and its shortcomings are noted. through the relations of breakdown voltage ? time, the thesis discusses a quick - start controller using pulse transformer

    2 .金屬鹵化物燈的啟動問題較其它類型的高強度氣體放電燈更為困難,作者對金屬鹵化物燈的工作電路進行了理論分析,對目前常用的lc串聯諧振啟動方式進行了較為詳細的理論研究,並指出了其存在的缺點。
  16. In order to improve process quality and increase probability, we optimize ohm contact resistance and breakdown voltage of devices by adjusting process conditions. finally, dc - 500mhz midf switch is fabricated, in which some important conclusions and suggestions are introduced

    工藝研究的重點是改進工藝質量,提高成品率,為此我們通過調整工藝條件來優化歐姆接觸電阻和提高器件的擊穿電壓。
  17. The influence of burning system on the properties and structure of the ceramic capacitors has been studied under the certain temperature system, the optimum sintering temperature of the ceramics was primarily decided by the content of bi2o3 ? 3tio2. the sintering temperature dropped with the adding of bi2o3 ? 3tio2. at the range of suitable sintering temperature, slow heating and low temperature sintering can obtain fine grain and dense structure. it results in the improving of the breakdown voltage for the middle - high voltage ceramic capacitors

    研究了燒成工藝制度對電容器陶瓷性能和結構的影響,結果表明:在一定的升溫保溫時間下,瓷料的最佳燒結溫度主要取決于組成中bi _ 2o _ 3 ? 3tio _ 2的含量, bi _ 2o _ 3 ? 3tio _ 2含量的增加將降低燒結溫度;在合理的燒結溫度范圍內,慢速升溫和低溫燒結將有利於得到細晶緻密結構,從而改善中高壓陶瓷電容器的耐壓強度。
  18. Breakdown voltage meter

    耐電壓表
  19. The insulation characteristic of insulator in vacuum is researched in the process of the high voltage breakdown along the insulator surface in vacuum, which is called vacuum surface flashover

    絕緣子的真空表面絕緣特性研究真空下的高壓沿絕緣子表面擊穿物理過程,稱真空表面閃絡過程。
  20. Experiments with fcg show that voltage breakdown and fabrication tolerance causes most of the flux losses

    從fcg裝置的實驗中得到了fcg設計中存在的主要問題是擊穿和裝配公差。
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