wet-chemical etching 中文意思是什麼

wet-chemical etching 解釋
濕化學腐蝕
  • wet : adj (opp dry )1 濕,潮濕的,有濕氣的。2 雨的,下雨的,多雨的。3 〈美俚〉允許賣[制]酒的,不禁酒...
  • chemical : adj 化學的,化學作用的;應用化學的,用化學方法獲得的。n 〈常 pl 〉化學製品;藥品。 fine chemicals...
  • etching : n. 1. 蝕刻法;蝕刻(銅)版畫;蝕鏤術。2. 蝕刻畫,蝕刻版,蝕刻版印刷品。
  1. For example, when the gaas substrate is etched by h2so4 - h2o2, h2o2 is adopted to oxidate the substrate first, then the substrate was etched by means of laser wet etching in h2so4 solvent. theoretical analysis and experimental results show that compared with the mixed - solvent - etching, more smooth etched surface can be obtained by this method ; and because the substrate is preprocessed, time of laser induced wet - chemical etching

    理論分析和實驗結果都表明,次序選擇腐蝕法可以有效地提高腐蝕表面的均勻性;因先對基片進行化學腐蝕處理,大大縮短了激光化學腐蝕的時間;使溶劑先後分別作用於基片,可以提高激光化學腐蝕溶劑配比的精度容差,使激光化學腐蝕控制和分析更加簡單。
  2. The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate. the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film, and the uncovered area is processed by laser induced wet etching

    本文的工作就是圍繞半導體gaas基片的激光化學誘導液相腐蝕技術開展的,主要的研究結果和創新之處如下: 1 )提出了激光誘導液相抗蝕膜掩蔽法和電極腐蝕法抗蝕膜掩蔽法是指在基片表面不需要腐蝕的區域用抗蝕膜覆蓋,激光照射在無抗蝕膜區域,對基片進行腐蝕。
  3. A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode

    而且,目前可借鑒的參考文獻較少,圍繞著前人做過的方案,本文做了大量工作,在已有文獻介紹的基礎上,結合原有的理論和實踐基礎,摸索出了包括高溫氧作用反應離子( rie )刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝,運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。
  4. Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective

    半導體的激光誘導液相腐蝕與普通化學腐蝕相比,可以有效地消除晶體取向影響,製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比,其工藝條件更加容易實現,操作更加簡單;與干法離子刻蝕相比,對基片無離子損傷,過度腐蝕容易控制,成本低。
  5. A different approach, named " two step growth approach " has been applied to fabricate an 8x8 photodiode array in the first time. the micro - processing procedures of this photodiode array including standard photolithography, a number of metallisation, wet - chemical etching and sic2 deposition for insulation were developed in this study

    首次採用「兩步法」制備出了新穎的8 8zns肖特基光電二極體陣列,詳細研究並確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。
  6. Aluminium target with deep amplitude modulation fabricated by chemical wet etching process

    調制靶的化學腐蝕制備工藝研究
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