zener 中文意思是什麼
zener
解釋
n. 名詞 【無線電】齊納。-
Alloy zener junction
合金齊納結 -
The flow stress can be described by temperature - compensated strain rate, the so - called zener - hollomon parameter
利用7055鋁合金高溫塑性變形時穩態流變應力、應變速率（ -
The basis topologies for the band - gap, buried zener, and xfet references are shown in figures 1, 2, and 3, respectively
關于帶隙基準、掩埋齊納二極體和xfet基準的基本拓撲如圖1 、 2和3所示。 -
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors
現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。 -
The double exchange interaction founded by zener in early 1950 ' s, and developed by anderson and de gennes later is a better theory in describing the conductive behavior in the compounds
最後由anderson等人發展了五十年代初期由zener創立起來的雙交換作用理論，為解釋龐磁電阻效應提供了一條途徑。 -
We are your specialist for semiconductor diodes and rectifiers : standard to ultrafast recovery, schottky, zener, supressor - diodes, bridge rectifiers, transistors, diacs ; also customized
我們是專門提供二極體以及整流器，例如:標準到超快速恢復，肖特極，穩壓，雙向觸發二極體，橋式整流器，轉換器等等，可以依照客人要求訂做。 -
Buried zener - based references are frequently used for 12 - bit, 14 - bit, and higher resolution systems because the performance of the buried zener - based references can be extended by incorporating nonlinear temperature compensation networks into the design
在設計中使用非線性溫度補償網路，掩埋齊納二極體基準的性能可以進一步提升，因此掩埋齊納二極體基準經常用於12位、 14位和更高解析度的系統中。 -
We studied the influence of the interface strain and it shows that the lattice mismatch between substrate and film is the main reason of the above observations. expand strain decreases tm - i with increasing resistivity and compressed strain has the opposite effect. using double exchange model of zener these results can be explained qualitatively
27歐姆厘米，轉變溫度是78與154開爾文，磁場強度為7t時，磁阻率為習3及巧6 x結合雙交換模型和不同的應力作用，逐一解釋了產生差異的緣由，其中我們也討論了具有）取向的la 。 -
Firstly, i provide a brief review of the previous achievements and investigations on the low - dimensional quantum devices and semiconductor superlattice, in which some principal theories such as bloch oscillations, wannier - stark ladder, zener tunneling and related progress in experiments are introduced
首先綜述了過去三十年低維量子器件與半導體超晶格的發展與相關研究，介紹了bloch振蕩、 wannier - stark臺階、 zener隧穿等關鍵理論以及相關實驗方面的進展，並引入簡化模型：緊束縛模型與單帶模型。 -
That is the reason that all over the countries have never stopped researching for mask jamming technology of radar. at present, the mask jamming source mainly comes from the thermal noise and zener avalanche noise of semiconductor devices. but the noise ’ s quality isn ’ t stabile because of the differences of semiconductor devices each other and the changes of exterior conditions
目前採用的遮蓋性干擾的噪聲源主要來自半導體器件本身的熱噪聲或齊納雪崩噪聲，但各器件本身的不一致性和外界條件變化等因素使噪聲輸出質量不穩定;同時由於此類信號不能再生，不利於科學研究。
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