zinc blende 中文意思是什麼
zinc blende
解釋
【礦物】閃鋅礦。-
This film has been identified as polycrystal znse with zinc blende structure by xrd
Xrd結果顯示該薄膜為立方閃鋅礦結構的znse多晶薄膜。 -
Zn power, se power and diethylamine was used as the sources in this method and nanocrystal znse powders were synthesized at 225. these powders have been identified as polycrystal znse with zinc blende structure by xrd. the size of particle is about 100nm ~ 200nm
採用zn粉和se粉為原料，以二乙胺為溶劑，在225下得到了znse粉末， xrd結果顯示其為znse多晶粉末，從tem照片可看出其顆粒的尺寸約為100nm 200nm 。 -
Various chemical strategies have been introduced to the system to affect the dynamics of reaction, and thus, to adjust the nucleation and growth process. by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature, both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled. a precipitate slow - release controlled method was designed in the synthesis of manganese selenides
在化學調控合成思想的指導下，運用已取得的調控合成的成功經驗，利用mnseo3沉澱緩釋放出mn2 +源和硒源，在調節反應溫度的基礎上，于同一反應體系成功地合成了mnse2和mnse的立方體和球形微米晶，實現了產物組成和維度的調控，並對它們的磁行為進行了研究。 -
The cdte films doped te are deposited onto glass substrate by close spaced sublimation. the x - ray diffraction data indicate the pure cdte films are polycrystalline zinc - blende structure with grain orientation predominantly along ( 111 ) direction. the electrical properties of cdte films are investigated by hall effect measurement using the van der pauw method
X射線衍射分析表明，純cdte薄膜是立方閃鋅礦結構， （ 111 ）晶面取向生長； hall效應實驗測量發現薄膜電阻很高，呈p型電導，面電阻率數量級達1010 -
However, it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap, which will lead to an extremely large miscibility gap
然而要在gap中實現高濃度的摻氮並不容易。這主要是由於gap和gan之間較大的物理特性的差異，特別是晶格結構和晶格常數的差異，使得gap和gan存在較大的可混溶性間隙，從而難以生長高質量的高摻氮的gap材料。
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