介質層 的英文怎麼說

中文拼音 [jièzhícéng]
介質層 英文
dielectric layer
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  1. The ionosphere is a complex medium, which is aeolotropy, asymmetry, dispersive and changes randomly with time. in order to improve the communication quality of the shortwave that depends on the ionosphere, we should have aknowledge of the current condition of the ionosphere in real time. the backscatter sounding of high frequency can diagnose the real - time channel characters for shortwave communication or hf radar, which is great assistant to shortwave communication and hf radar

    電離層是隨機時變，各向異性，非均勻、色散的復雜介質。為了保證依賴于電離層進行的短波通信質量，必須了解電離層的實時狀態信息。高頻返回散射探測可以實時監測與短波通信或高頻天波雷達相關的天波傳播通道的狀態，對短波通信和天波雷達工作起了重要的輔助作用。
  2. A new pbg cover formed by digging air holes in the material is studied. lt is easier to be fabricated compared with the structure reported before

    與文獻所報道的矩形氧化鋁棒結構相比，這種新的覆層結構由於採用了介質內鉆空氣孔的形式更容易加工實現。
  3. So these karst series problems are lowness ability of making soils, distributing odds of surface water and groundwater, leakiness of fountain, alkalescence of circumstance, lowness of bio - diversity, rapidness converse succession of vegetation and fragility of soil character and entironment. and karst region produces many problems, e. g. rock desert, soil erosion and degeneration because of artificial influence and destruction

    巖溶空間介質具有地上地下雙層結構，可溶巖造壤能力低，巖溶水空間分佈不均、地表地下水關系密切、水源易漏失，偏堿性環境、生物資源集聚程度低，植被逆向演替快、順向演替難，巖溶地質與生態環境十分脆弱，受到人為因素的影響和破壞，極易產生石漠化、土壤侵蝕與退化等一系列問題。
  4. When an inhomogeneous plane wave is introduced into a dense dielectric layer, it can bounce between the two boundaries.

    把一非均勻平面波引進折射率較高的介質層時，它會在上下界面間來回地「彈」射。
  5. The subregion with pure dielectric layers is analyzed by mol and the fast fourier transform ( fft ) is introduced to reduce the computing time, while the subregion with conductors is analyzed by fdfd to take advantage fully the superiorities of these two methods

    通過在純介質區域使用直線法，導體所在區域使用有限差分法分別進行求解，充分發揮兩種方法各自的優越性。由於在純介質區域中使用了直線法求解，因此該演算法具有計算時間與介質層厚度無關的突出優越性。
  6. Based on all the research works mentioned above, a new technique to compute the caliber admittance matrix has been derived and applied for the problem of the scattering by electrically body with opening cavities

    在計算實例中，不同形狀的的腔體以及內部含有介質層的腔體對電磁散射的貢獻得到了比較和分析。在上述研究的基礎上，本文首次提出了用有限元方法計算腔體內部口徑導納矩陣。
  7. As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications

    另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。
  8. In structure, there is no need of using a substrate with high dielectric constant to reduce the filter size, and it is suitable to be buried into the substrate and thus easy to integrate with other sub - modules to form a single, miniaturized, multifunction module

    結構上，不需要使用高介電常數的介質來降低濾波器尺寸，並且適于埋入介質層內與其他次模組整合成單一、微小化之多功能模組。
  9. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  10. Both the dielectric layer and metal film were internally deposited on the fiber. it is found that ag is able to engender the highest ir reflectivity among the metal materials, so ag is ascertained as the metal layer material of the hollow waveguide, cop was used in this work as the dielectric material. based on countless calculations, optimum thickness for the deposited films were obtained, namely, 0. 2 / / m for ag layer and 1. 4 fan for the cop layer

    實驗用來制備空芯光纖的基管材料為石英基管；內徑為1mm ；通過理論推導與分析發現：相對于其它的金屬材料而言，金屬銀的紅外反射率最高，因此金屬銀最適合用做制備空芯光纖的金屬膜層的材料；通過比較幾種聚合物的性質確定選擇環烯聚合物cop為電介質層材料；通過理論推導與計算確定了金屬銀膜與電介質膜的最佳理論厚度，即銀膜為0 . 2 m ， cop膜的厚度為1 . 4 m 。
  11. The asymmetry of beam splitting angle of wollasion prismis is described, and the elimination of adjustable beam splitting angle prism by adusting the cemented layer is analyzed

    摘要給出了渥拉斯頓分束角的不對稱性，指出通過調整膠合介質層的均勻性可消除可調分束鏡分束角的不對稱性。
  12. First is diffusion permeation : the theory about the calculating approximating of diffusion permeation in limited medium by roujean is used, and the four fluxes used in non - lambort - surface are also introduced

    首先是漫射透過率:我們利用roujean對有限厚度介質層的透射解析近似理論和思想求解之，並且對非朗伯面情形時的透射解析近似的四通量思想也作了相關介紹。
  13. The analytical mode is based on the theory of sound propagation in layered media. the concept of equivalent parameters is established. the absorption of sound energy by damping layer ' s is represented by use of complex sound impedance

    解析模型以分層介質中的波動理論為基礎，建立了等效參數的概念，並運用聲阻抗的復數表示法把阻尼層對介質層聲能吸收的影響都考慮進去，通過比較敷設消聲覆蓋層前後多層傳遞損失的差異來獲得消聲層的效率。
  14. Influence of dielectric film thickness and surface discharge on fingerprint discharge image

    介質層厚度及其表面放電對指紋放電成像質量的影響
  15. In experiments, the energy band structures of l - - d pc and 1 - - d pc sl are researched. we get the relation between the band gap width and the num - ber of the iayers, dielectric indices contrast, midgap wave - - length

    在實驗工作中，研究了一維光子晶體的能帶結構，得到了帶隙寬度隨介質層數、介質折射率、中心波長變化的關系曲線。
  16. Secondly, the frequency response of fss switched between dielectric is discussed

    在此基礎上，又分析了夾在介質層中間典型fss復合結構的頻率特性。
  17. Half - wave dielectric layer

    半波介質層
  18. The heated part of thermal resistance temperature sensor is thin wire which circled framework that made up by insulated material. if there is different temperature in the measured medium, the measured temperature is its average temperature. although the shapes of thermal resistance are different, their basic structure are same on the whole, usually composed by temperature sensor insulated jacket protective tube junction box, etc

    熱電阻的受熱部分感溫元件是用細金屬絲均勻地雙繞在絕緣材料製成的骨架上，當被測介質中有溫度梯度存在時，所測得的溫度是感溫元件所在范圍內介質層中的平均溫度。
  19. In view of engineering, the effect of the uneven dielectric division on the electromagnetic parameter is also investigated

    鑒于實際工程設計需要，還分析了介質層分界面的不平整性對電磁參數的影響。
  20. The multi - layer model algorithm not only calculates the thickness of gate dielectric but also validates whether the model is proper. it has high practical merit to analyze the structure of gate dielectric

    這種演算法和軟體的實現對于mos柵介質層的結構分析有很高的實用價值，對于微電子器件的結構研究有一定的推動作用。
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