元素半導體 的英文怎麼說
中文拼音 [yuánsùbàndǎotǐ]
元素半導體
英文
element semiconductor-
The type of packages and the methods in which it is possible to mount the finished semiconductor chip ( depending on factors such as heat dissipation, size, etc. )
封裝的類型和方法（它們取決于熱耗散和尺寸大小等因素） ，用此種方式即可安置經過精製的半導體晶元。So the study and use of compound powders and thin films get more and more regards. among them the double layered structure nanocompound semiconductor become the focus of study by their high photocatalytic efficiency, fast reaction speed etc. it has been confirmed that the potassium niobate ( k4nb6o17 ) is an excellent semiconductor photocatalyst. its special construction consists in the ion k + in the interlayer can be replaced by other cations, which providing vast space of modifying the material
層狀化合物中的鈮酸鉀k _ 4nb _ 6o _ （ 17 ）已被證實是一種性能優異的半導體材料，具有光催化和光電轉換性能，其獨特的結構是處于層間的帶正電的k ~ +可以被其它陽離子所替代，正是由於其多元素、復合型的特點，為材料的修飾和改性提供了廣闊的技術空間。But the magic of a conformal mapping is that the device is guaranteed to operate in identical fashion to the circular version, just with the geometry of all the critical elements ( semiconductor, metal, field lines and current flows ) transformed by the mapping
不過保角映射的神奇之處在於，它能確保這個裝置會以和其圓形版本完全相同的方式運作，所有的關鍵元素（半導體、金屬、場線與電流）都會隨著保角映射被轉換過去。The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface
發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。According to the raman selection rule and the pl measurement, it is reasonable to evaluate the quality of galnp / algalnp mqw by analyzing the relative intensity ratio of a1p - lo / to. ( 4 ) a new modified random element isodisplacement ( mrei ) model is set up to calculate the dependence between the long - wavelength optical phonon frequencies and the composition of iii - v - type ab1 - xcx mixed crystals. the second neighbor force constants are still assumed to be a linear variation with the composition, but the two first neighbor force constants can be evaluated to be a negative exponent variation with the composition, using the overlapped repulsive potential of the ion crystal combination
通過實驗我們找到了在這些結構參數上生產gainp algainpmqw的較理想的結果； （ 3 ）首次用喇曼（ raman ）散射方法研究了常溫下的gainp algainp多量子阱結構，除了指認出喇曼光譜中各光學聲子模外，還結合樣品光致發光譜的測量結果，分析發現喇曼光譜中alp - lo to的相對強度比可以在一定程度上評定晶體gainp algainpmqw的生長質量； （ 4 ）在修正的隨機元素等位移? mrei模型的基礎上建立了一個新模型，計算了ab _ （ 1 - x ） c _ x型?族半導體混晶的長波長光學聲子模頻率的組分變化關系。As the key part of the thermoelectric generation equipment, thermoelectric material becomes the important research object. in my work, ca3co4o9 semiconductor was synthesized and its thermoelectric properties was improved by different dopants
作為熱電發電器的核心部分的熱電材料自然成為研究的重點，本論文工作以ca _ 3co _ 4o _ 9半導體為研究對象，通過不同元素摻雜宋改善它的熱電性能，已經取得了良好的效果。Fes _ 2 ( pyrite ) has been considered as a valuable semiconductor for solar energy conversion and other photoelectrochemical applications since it consists of nontoxic and abundant elements. because of the band gap of about 0. 95ev and the very high light absorption coefficient ( < 700nm 時 ， > 5 10 ~ 5cm ~ - 1 ), it might be suitable for sensitization solar cells and in the form of ultrathin films
Fes _ 2 （ pyrite ）是一種具有合適禁帶寬度（ e _ g 0 . 95ev ）和較高光吸收系數（ < 700nm時， > 5 10 ~ 5cm ~ - 1 ）的半導體材料，其組元元素儲量十分豐富、無毒，而且在制備太陽能電池時可以以薄膜形式使用，成本較低，與已有半導體材料相比，是一種較有研究價值的太陽能電池材料。The structure of the strained quantum well laser has been optimized, not only the well layer, the barrier layer, the waveguide layer and the cladding layer but also the content of al, in have been studied and designed
對應變量子阱激光器的結構進行了優化設計，對半導體激光器的阱層、壘層、波導層和限制層的厚度及in 、 al元素的含量進行了研究和設計。The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。It is very importance to analyze the evolution of microscopic surface features, which impact on the etching surface shape in solid etching process. much theoretical and experimental study point out that the different etching surface shapes by the plasma beam with same energy will be different
隨著衍射光學元件的應用和半導體工業的發展，對刻蝕工藝中存在的導致刻蝕表面面形發生各種形變的諸多影響因素的數學分析是一個比較復雜和重要的問題。Besides the element semiconductors, such as si ( called the first generation semiconductor ), and the compound semiconductors, such as gaas, inp ( called the second generation semiconductor ), silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )
碳化硅（ sic ）材料是繼第一代元素半導體（ si ）和第二代化合物半導體（ gaas 、 inp 、 gap等）材料之後的第三代寬帶隙半導體材料。The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
半導體硅材料中雜質元素的活化分析方法The results showed that the mg2si - based thermoelectric material doped with te and sb was still n - type, but that doped with ag changed into p - type
結果表明：摻雜te 、 sb元素得到的mg _ 2si基熱電材料仍為n型半導體；摻雜ag元素得到的mg _ 2si基熱電材料轉變為p型半導體。分享友人