勢阱的深度 的英文怎麼說

中文拼音 [shìjǐngdeshēndù]
勢阱的深度 英文
potential well depth
  • 勢 : 名詞1 （勢力） power; force; influence 2 （一切事物力量表現出來的趨向） momentum; tendency 3 （自...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 的 : 4次方是 The fourth power of 2 is direction
  • 深 : Ⅰ形容詞1 （從上到下或從外到里的距離大） deep 2 （深奧） difficult; profound 3 （深刻; 深入） thor...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 深度 : 1. （深淺程度） degree of depth; depth 2. （觸及事物本質的程度） profundity; depth
  1. If the velocity of atoms is near to zero, the light for ces will tend to confine the atoms near to nodes and antinodes. the stability depends on the magnitude of the negative slope of the light force, the depth of the potential well and the momentum diffusion coefficient. it is important to select the parameters, e. g

    如果通過激光冷卻能使原子速度降至很小甚至為零，光壓力的作用將使原子被較穩定地囚禁于激光駐波場的節點和反節點處，其穩定程度取決于該處光壓力曲線負斜率的大小、對應勢能的勢阱深度以及動量擴散系數的大小，因此，如何在實驗中合理選擇激光強度、失諧量等顯得尤為關鍵。
  2. The factors affecting the in - plane thermal conductivity of thin films discussed include the mass of particles, the well depth, and the lattice constant, etc

    從粒子質量、勢阱深度、晶格常數的變化等方面討論了其對薄膜兩種材料的切向導熱系數的影響。
  3. The performance of modulators employing mqw is governed by the quantum confined stark effect. in order to simplify the analysis of mqw, we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states. then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator

    本論文首先根據量子限制stark效應，發展了等效寬度思想，提出了把單量子阱結構的有限深勢阱的分析轉化為無限深勢阱模型的顯式公式，從而大大簡化了電場下量子阱結構的分析；接著利用轉移矩陣，把周期性的量子阱結構簡化為三層結構，得到了實際採用的非對稱三阱結構量子阱的場分佈，並討論了量子阱結構的偏振特性。
  4. Then through the optimization of the code, we can get the dependence of free electron ' s lifetime and the number of recombination events on the density and depth of traps

    通過對所得數據的分析，我們得到了光電子壽命以及復合事件的數量和速率對勢阱密度和深度的依賴關系。
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