單閂鎖 的英文怎麼說
中文拼音 [dānshuānsuǒ]
單閂鎖
英文
dead lock-
Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup
在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。Each latch is associated with a single allocation unit
每個閂鎖與單個分配單元關聯。This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet. its advantages are as fellow : no latch - up effect, better capability of resisting invalidation, much smaller parasitic capacitance, weaker hot - carrier effect and short - channel effects, and simpler technics, and so on
通過與體硅bjmosfet比較，討論和分析了soibjmosfet的優點：無閂鎖效應、抗軟失效能力強、寄生電容大大降低、熱載流子效應減弱、減弱了短溝道效應、工藝簡單等。We have demonstrated that the integrated circuit test structures fabricated at standard commercial foundries can be radiation tolerant at total does greater than 100krad ( si ). the radiation environment of outer space is capable of effecting cmos devices in three ways
外太空輻射環境主要以三種方式影響cmos器件：總劑量輻射效應（ tid ） ，單粒子翻轉效應（ seu ）和單粒子閂鎖效應（ sel ） 。Based on the construction of traditional flip - flop, we propose a novel edge - triggered flip - flip using one latch controlled by narrow pulse according to race - hazard of clock. then this principle is adopted in ternary circuit, a new ternary d type edge - triggered flip - fiop based on cmos transmission gate is proposed
在二值單閂鎖結構邊沿觸發器的基礎上，把利用時鐘信號競爭冒險的思想應用於三值電路中，提出了基於cmos傳輸門的二值d型時鐘信號競爭型邊沿觸發器。分享友人