均勻度測定儀 的英文怎麼說

中文拼音 [jūnyúndùcèdìngyí]
均勻度測定儀 英文
evenness tester
  • 均 : Ⅰ形容詞（均勻） equal; even Ⅱ副詞（都; 全） without exception; all
  • 勻 : Ⅰ形容詞（均勻） even Ⅱ動詞1. （使均勻） even up; divide evenly 2. （分出一部分） spare
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 測 : 動詞1. （測量） survey; fathom; measure 2. （測度; 推測） conjecture; infer
  • 定 : Ⅰ形容詞1 （平靜; 穩定） calm; stable 2 （已經確定的; 不改變的） fixed; settled; established Ⅱ動詞...
  • 儀 : 名詞1 （人的外表） appearance; bearing 2 （禮節; 儀式） ceremony; rite 3 （禮物）present; gift 4 ...
  • 測定 : determine; determination; setting-out; admeasurement; assignment; assay; finding
  1. Abstract : it is shown in this paper that distributions of electric fields in five measuring slots of uster evenness tester, and the errors caused by uneven electric fields were analysed. according to the results of measuring and analysing electric fields, a set of tests were made, and several estimation to the errors were given. at last, notices of operation were given

    文摘:實測了烏斯特紗線均勻度試驗儀上5個電容測量槽的電場強度分佈，分析了由測量槽不均勻電場所引入的誤差.系統地測試分析了第5號槽誤差，獲得了幾種誤差的定量估計.最後給出了正確使用儀器，避免測量誤差所應注意的幾點結論
  2. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
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