外源性熒光 的英文怎麼說

中文拼音 [wàiyuánxìngyíngguāng]
外源性熒光 英文
extrinsic fluorescence
  • 外 : Ⅰ名詞1 （外面） outside; external side 2 （外國） foreign country 3 （以外） besides; beyond; in ...
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 熒 : 形容詞[書面語]1. （光亮微弱的樣子） glimmering 2. （眼光迷亂; 疑惑） dazzled; perplexed
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  1. A database search revealed that the putative sequence of the red gene shows 40 - 50 % identity with those of uroporphyrinogen iii methyltransferase ( encoded by coba gene ) from various kinds of bacteria. an over - expression of the coba gene in e. coli was reported to lead to an accumulation of trimethylated derivative of porphyrin termed trimethylpyrrocorphin and factor ii, which emit strong red fluorescence under uv

    在ddbj中搜索到多種細菌來源的coba基因（編碼uroporph仰nogenhmethyltransferase ）與redsene有40 50的同源性，並據報道，其中一個來源於pmpboibaclerilllaslldelll切chit的coba的基因，轉人大腸桿菌、酵母菌及動物細胞后能使表達載體在紫外線下發射紅色熒光。
  2. We have prepared a series of neodymium binary / ternary complexes, such as nd ( acac ) 3 ' 2h2o, nd ( tfa ) 3 ' 2h2o, nd ( hfa ) 3 ' 2h2o, nd ( dbm ) 3 ' h2o, nd ( acac ) 3phen, nd ( tfa ) 3phen, nd ( hfa ) 3phen, nd ( dbm ) 3phen, nd ( tta ) 3 ( tppo ) 2, nd ( hfa ) 3 ( tppo ) 2, nd ( acac ) 4hpy, nd ( tta ) 4hpy and ndq3. the effects of organic ligands, synergistic coordination agents and different substitution groups for - diketones on effective line width and photoluminescence intensity of neodymium complexes were investigated. the photoluminescence spectra indicate that synergistic coordination agents can shield neodymium ion and impede water molecules penetrating into inner coordination shell to satisfy large coordination number of nd3 + during hydrous synthesis process, so the luminescence intensity of neodymium ternary complexes is stronger than that of neodymium binary complexes

    發光光譜研究表明，由於協同試劑的參與，屏蔽了水分子參與配位，降低了羥基（ oh ）對釹離子激發態能級~ 4f _ （ 3 2 ）的猝滅，三元配合物的熒光強度均比二元配合物強，其中配合物nd （ tta ） _ 3 （ tppo ） _ 2在1340nm處的熒光強度最強，適合作為摻雜的光學活性物質，來制備有源光波導材料；在有水工藝條件下，單純地氟化配體未必能提高釹配合物的近紅外發光性能。
  3. Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline materials. porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( qeic ), opening up the bright future for the vlic

    多孔硅（ ps ）是近年來發展起來的一種新型硅基材料，具有與單晶硅材料大不相同的特性，例如，多孔硅可在近紅外和可見，甚至近紫外區輻射強烈的熒光，使得它可用來製造發光器件，並可望在解決光電子集成電子學的關鍵問題，為製造帶有光源的大規模集成電路等方面開辟新的途徑。
  4. Green fluorescent protein has several good characters. under excitation of long uv light or blue light, it emits green fluorescence without requiring any exogenous substrates and cofactors. gfp gene expression can be used to monitor gene expression and protein localization in living cells and organisms. this is a development of revolutionary significance. the dna sequence of this gene can be re - engineered by mutagenesis and the gfp will get improved fluorescent properties. the applications of gfp will be wider and wider

    綠色熒光蛋白具有優良的特性，在藍光或長紫外光的激發下，不需要任何外源底物或內源輔助因子的參入就能發出綠色熒光.綠色熒光蛋白基因的表達可用來監控活細胞或生物體中基因表達和蛋白質的定位.這是一個革命性的進展.而且，對基因dna序列的改造有可能使綠色熒光蛋白的發光特性更加優良，從而其應用范圍會更加廣泛
  5. Methods of testing plastics. optical and colour properties, weathering. methods of exposure to laboratory light sources. fluorescent uv lamps

    塑料試驗方法.第5部分：風化條件下的光學和顏色特性. 540f方法：曝露在實驗室光源下的方法.熒光紫外燈
  6. Then we grew the material with different active layer growth temperature, different v / ratio, different doping concentration and form. after that, we tested these materials by photoluminescence ( pl ) technology, and got the best growth condition according to the results of photoluminescence spectra. our result was that the active layer growth temperature was 700, v / ratio was 60, waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm, p - type doping with dmzn from 90sccm to 490sccm )

    然後在不同的有源區生長溫度、 /比、摻雜方式及濃度情況下對激光器材料進行外延生長，並利用光熒光（ pl ）技術對不同生長條件下外延材料的光致發光特性進行了測試對比，結果表明在下列條件下生長出來的材料具有更好的光學和電學性能：有源區生長溫度在700 、波導層/比選擇為60 、 n型波導漸變摻雜190sccm - 590sccm的sih _ 4 、 p型波導漸變摻雜90sccm - 490sccm的dmzn 。
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